DF04S [DIODES]

1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER; 1.0A表面安装玻璃钝化整流桥


型号：	DF04S
厂家：	DIODES INCORPORATED
描述：	1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER 1.0A表面安装玻璃钝化整流桥整流二极管桥式整流二极管光电二极管
文件：	总2页 (文件大小：56K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DF005S - DF10S

1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE

RECTIFIER

Features

Glass Passivated Die Construction

Diffused Junction

Low Forward Voltage Drop, High Current

Capability

DF-S

Surge Overload Rating to 50A Peak

Dim

Min

7.40

6.20

0.22

0.076

—

Max

7.90

6.50

0.30

0.33

10.40

1.53

8.51

2.60

5.20

1.20

Designed for Surface Mount Application

Plastic Material - UL Flammability

Classification 94V-0

A B

D E

UL Listed Under Recognized Component Index,

File Number E94661

1.02

8.13

2.40

5.00

1.00

Mechanical Data

Case: Molded Plastic

Terminals: Solder Plated Leads, Solderable

per MIL-STD-202, Method 208

Polarity: As marked on Case

Approx. Weight: 0.38 grams

Mounting Position: Any

All Dimensions in mm

Marking: Type Number

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

005S

02S

04S

06S

08S

10S

Characteristic

Symbol

Unit

01S

100

V_RMM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

200

140

400

600

420

800

560

1000

700

V_RMS

I_O

RMS Reverse Voltage

280

1.0

Average Forward Rectified Current

@ T_A= 40°C

Non-Repetitive Peak Forward Surge Current, 8.3 ms

single half-sine-wave superimposed on rated load

(JEDEC method)

I_FSM

Forward Voltage (per element)

@ I_F= 1.0A

V_FM

I_RM

1.1

Peak Reverse Current at Rated

DC Blocking Voltage (per element)

@ T_A= 25°C

@ T_A= 125°C

500

µA

I²t Rating for Fusing (t<8.3ms)

I²t

C_j

10.4

A²s

Typical Junction Capacitance (per element) (Note 1)

Typical Thermal Resistance, Junction to Ambient

(Note 2)

R_qJA

°C/W

°C

T_j, T_STG

Operating and Storage Temperature Range

-65 to +150

Notes:

1. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.

2. Thermal resistance, junction to ambient, measured on PC board with 5.0mm (0.03mm thick) land areas.

DS17001 Rev. H-2

1 of 2

DF005S-DF10S

1.0

60 Hz Resistive or

Inductive load

T_j= 25°C

Pulse Width = 300µs

2% duty cycle

1.0

0.5

0.1

0.01

100

120

140

0.8

0.4

1.0

1.4

0.6

1.2

T_A, AMBIENT TEMPERATURE (°C)

Fig. 1 Output Current Derating Curve

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typ Forward Characteristics (per element)

100

T_j= 25°c

Single half-sine-Wave

(JEDEC Method)

f = 1.0 Mhz

V_sig= 50 mV p-p

100

V_R, REVERSE VOLTAGE (V)

NUMBER OF CYCLES AT 60 Hz

Fig. 3 Max Non-Repetitive Peak Forward Surge Current

Fig. 4 Typ Junction Capacitance (per element)

100

T_j= 125°C

1.0

T_j= 25°C

0.1

0.01

100

120

140

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 5 Typ Reverse Characteristics (per element)

DS17001 Rev. H-2

2 of 2

DF005S-DF10S

相关型号：