DMC1030UFDBQ [DIODES]
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET;
| 型号： | DMC1030UFDBQ |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
| 文件： | 总9页 (文件大小：564K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMC1030UFDBQ
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features
Low On-Resistance
ID MAX
Device
BVDSS
RDS(ON) MAX
Low Input Capacitance
TA = +25°C
Low Profile, 0.6mm Max Height
5.1A
4.7A
4.2A
3.6A
-3.9A
-3.3A
-2.8A
-2.0A
34mΩ @ VGS = 4.5V
40mΩ @ VGS = 2.5V
50mΩ @ VGS = 1.8V
70mΩ @ VGS = 1.5V
59mΩ @ VGS = -4.5V
81mΩ @ VGS = -2.5V
115mΩ @ VGS = -1.8V
215mΩ @ VGS = -1.5V
ESD Protected Gate
Q1
N-Channel
12V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Q2
P-Channel
-12
Mechanical Data
Case: U-DFN2020-6 (Type B)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Terminals: Finish NiPdAu over Copper Leadframe. Solderable
e4
per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
Load Switch
Power Management Functions
Portable Power Adaptors
U-DFN2020-6 (Type B)
S2
D2
D1
G2
D2
D1
G1
G2
D1
D2
G1
Gate Protection
Diode
Gate Protection
Diode
S1
ESD PROTECTED
S1
S2
Pin1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
Bottom View
Internal Schematic
Ordering Information (Note 5)
Part Number
Case
Packaging
DMC1030UFDBQ-7
DMC1030UFDBQ-13
U-DFN2020-6 (Type B)
U-DFN2020-6 (Type B)
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
D3
M = Month (ex: 9 = September)
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
Code
C
D
E
F
G
H
I
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMC1030UFDBQ
Document number: DS38242 Rev.1 - 2
DMC1030UFDBQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Q1
Q2
Characteristic
Symbol
Unit
N-CHANNEL P-CHANNEL
Drain-Source Voltage
Gate-Source Voltage
12
±8
-12
±8
V
V
VDSS
VGSS
Steady
State
5.1
4.1
-3.9
-3.1
TA = +25°C
TA = +70°C
A
A
Continuous Drain Current (Note 6)
N-CHANNEL: VGS = 4.5V
ID
ID
6.6
5.3
-5.0
-4.0
TA = +25°C
TA = +70°C
t < 5s
P-CHANNEL: VGS = -4.5V
-1.7
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (L = 0.1mH)
2
35
5
A
A
IS
-25
-5
4
IDM
IAS
A
4
Avalanche Energy (L = 0.1mH)
mJ
EAS
Thermal Characteristics
Characteristic
Symbol
PD
Value
Unit
Steady State
1.36
1.89
92
Total Power Dissipation (Note 6)
W
t < 5s
Steady State
t < 5s
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
66
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
18
R
JC
-55 to +150
TJ, TSTG
Electrical Characteristics Q1 N-CHANNEL (@ TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
12
—
—
—
1.0
±10
V
BVDSS
IDSS
—
—
—
VGS = 0V, ID = 250μA
VDS = 12V, VGS = 0V
VGS = ±8V, VDS = 0V
μA
μA
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.4
—
—
—
—
—
—
17
20
24
28
0.7
1
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 4.6A
VGS = 2.5V, ID = 4.2A
VGS = 1.8V, ID = 3.8A
VGS = 1.5V, ID = 1.5A
VGS = 0V, IS = 4.8A
34
40
50
70
1.2
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
1003
132
115
11.3
12.2
23.1
1.3
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
VDS = 6V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
Qg
VDS = 10V, ID = 6.8A
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
1.5
Turn-On Delay Time
4.4
Turn-On Rise Time
7.4
VDD = 6V, VGS = 4.5V,
Turn-Off Delay Time
18.8
4.9
RL = 1.1Ω, RG = 1Ω
tD(OFF)
tF
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
7.6
IS = 5.4A, dI/dt = 100A/μs
IS = 5.4A, dI/dt = 100A/μs
tRR
0.9
QRR
Notes: 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMC1030UFDBQ
Document number: DS38242 Rev.1 - 2
DMC1030UFDBQ
20
18
16
14
12
10
8
20
18
16
14
12
10
8
V
= 4.5V
GS
V
= 1.8V
GS
V
= 5.0V
DS
V
= 1.5V
V
= 4.0V
GS
GS
V
GS
= 2.0V
V
= 3.5V
GS
)
V
= 3.0V
GS
(
I
6
6
,
T = 150°C
A
I
T
= 85°C
4
A
4
T
= 125°C
A
V
= 1.0V
GS
V
= 0.9V
T
= 25°C
GS
A
2
2
T
= -55°C
A
0
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.05
0.04
0.03
0.02
0.01
0
0.04
0.03
0.02
0.01
0.00
V
= 4.5V
GS
V
= 1.5V
GS
T
T
= 150°C
= 85°C
A
T
= 125°C
A
V
= 1.8V
GS
A
T
= 25°C
V
= 2.5V
A
GS
T
= -55°C
A
V
= 4.5V
GS
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
2
0.06
0.05
0.04
0.03
1.8
1.6
1.4
1.2
1
V
= 2.5V
GS
= 5.0A
I
D
V
= 1.8V
V
= 1.8V
GS
= 3.0A
GS
= 3.0A
I
I
D
D
0.8
0.6
0.4
0.2
0
V
= 2.5V
GS
= 5.0A
I
0.02
0.01
0
D
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
Figure 5 On-Resistance Variation with Temperature
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DMC1030UFDBQ
Document number: DS38242 Rev.1 - 2
DMC1030UFDBQ
1
0.8
0.6
0.4
0.2
0
20
18
16
14
12
10
8
)
(
,
I
I
= 1mA
D
T
= 150°C
A
I
= 250µA
D
T
A
= 125°C
A
T
= 25°C
A
6
T
= 85°C
T
= -55°C
,
4
A
2
0
0
0.3
0.6
0.9
1.2
1.5
-50 -25
0
25
50
75 100 125 150
TJ , JUNCTION TEMPERATURE (oC)
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
Figure 7 Gate Threshold Variation vs. Junction Temperature
10000
8
6
4
2
0
f = 1MHz
C
iss
1000
100
10
V
I
= 10V
DS
= 6.8A
C
oss
D
C
rss
0
2
4
6
8
10
12
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 9 Typical Junction Capacitance
Figure 10 Gate Charge
100
10
R
DS(ON)
Limited
DC
P
= 10s
W
1
0.1
P
= 1s
W
P
= 100ms
W
P = 10ms
W
P
= 1ms
W
T
T
= 150°C
J(max)
= 25°C
P
= 100µs
W
A
V
= 4.5V
GS
Single Pulse
DUT on 1 * MRP Board
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA Safe Operation Area
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DMC1030UFDBQ
Document number: DS38242 Rev.1 - 2
DMC1030UFDBQ
Electrical Characteristics Q2 P-CHANNEL (@ TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-12
—
V
BVDSS
IDSS
—
—
—
—
VGS = 0V, ID = -250μA
VDS = -12V, VGS = 0V
VGS = ±8V, VDS = 0V
-1.0
±10
μA
μA
IGSS
—
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.4
—
—
37
-1
59
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -3.6A
VGS = -2.5V, ID = -3.1A
VGS = -1.8V, ID = -2.6A
VGS = -1.5V, ID = -0.5A
VGS = 0V, IS = -3.7A
48
81
—
Static Drain-Source On-Resistance
69
115
215
-1.2
—
88
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
-0.7
—
1028
285
254
19.6
13
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
VDS = -6V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -8V)
Gate-Source Charge
Qg
20.8
1.8
VDS = -10V, ID = -4.7A
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
4.5
Turn-On Delay Time
5.6
Turn-On Rise Time
12.8
30.7
25.4
31.6
7.8
VDD = -6V, VGS = -4.5V,
Turn-Off Delay Time
RL = 1.6Ω, RG = 1Ω
tD(OFF)
tF
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS = -3.6A, dI/dt = 100A/μs
IS = -3.6A, dI/dt = 100A/μs
tRR
QRR
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
20
20
18
16
14
12
10
8
V
= -4.5V
GS
V
= -2.0V
V
= -5.0V
GS
DS
18
16
14
12
10
8
V
= -4.0V
GS
V
= -3.0V
GS
V
= -3.5V
GS
V
= -1.8V
GS
V
= -1.5V
GS
6
6
T
= 150C
A
V
= -1.0V
GS
T
= 85C
4
4
A
T
= 125C
A
T
= 25C
A
2
2
T
= -55C
V
= -0.9V
A
GS
0
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
-VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 12 Typical Output Characteristics
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 13 Typical Transfer Characteristics
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DMC1030UFDBQ
Document number: DS38242 Rev.1 - 2
DMC1030UFDBQ
0.06
0.05
0.3
0.25
0.2
V
= -4.5V
GS
VGS = -1.8V
T
= 150C
A
T
= 125C
A
T
= 85C
A
VGS = -1.5V
0.15
0.1
0.04
0.03
0.02
T
= 25C
A
T
= -55C
VGS = -2.5V
VGS = -4.5V
A
0.05
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
-ID, DRAIN SOURCE CURRENT (A)
Figure 15 Typical On-Resistance vs.
Drain Current and Temperature
-ID, DRAIN-SOURCE CURRENT (A)
Figure 14 Typical On-Resistance vs. Drain
Current and Gate Voltage
2
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
1.8
1.6
1.4
1.2
1
V
I
= -1.8V
GS
= -3.0A
D
V
I
= -2.5V
GS
= -5.0A
D
V
I
= -2.5V
GS
= -5.0A
D
V
I
= -1.8V
GS
= -3.0A
0.8
0.6
0.4
0.2
0
D
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 17 On-Resistance Variation with Temperature
Figure 16 On-Resistance Variation with Temperature
1
0.8
0.6
0.4
0.2
0
20
18
16
14
12
10
8
)
(
)
(
-I =1mA
D
-I = 250µA
D
T
= 150°C
A
T
A
= 125°C
A
6
,
I
T
= 25°C
A
-
T
= 85°C
4
,
T
= -55°C
A
2
0
0
0.3
0.6
0.9
1.2
1.5
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Figure 18 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100 125 150
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 19 Diode Forward Voltage vs. Current
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DMC1030UFDBQ
Document number: DS38242 Rev.1 - 2
DMC1030UFDBQ
10000
1000
100
f = 1MHz
C
C
iss
V
I
= -10V
DS
= -4.7A
oss
D
C
rss
10
0
5
10
15
20
25
0
2
4
6
8
10
12
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 20 Typical Junction Capacitance
Qg, TOTAL GATE CHARGE (nC)
Figure 21 Gate-Charge Characteristics
100
10
R
DS(on)
Limited
DC
= 10s
P
W
1
0.1
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
T
T
= 150°C
P
= 100µs
J(max)
= 25°C
W
A
V
= -4.5V
GS
Single Pulse
DUT on 1 * MRP Board
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 22 SOA Safe Operation Area
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
I
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
I
D = 0.01
D = 0.005
,
RθJA(t) = r(t)* RθJA
RθJA = 159oC/W
)
t
(
r
Duty Cycle, D = t1/t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIMES (sec)
Figure 23 Transient Thermal Resistance
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DMC1030UFDBQ
Document number: DS38242 Rev.1 - 2
DMC1030UFDBQ
Package Outline Dimensions
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.
U-DFN2020-6 (Type B)
A3
A1
A
Seating Plane
U-DFN2020-6
Type B
Dim
A
A1
A3
b
D
D2
e
Min
Max Typ
D
0.545 0.605 0.575
0.00 0.05 0.02
-
0.20 0.30 0.25
1.95 2.075 2.00
0.50 0.70 0.60
D2
D2
-
0.13
R
0
.150
-
-
0.65
z1
E
E2
k
1.95 2.075 2.00
0.90 1.10 1.00
-
E
E2
z1
-
0.45
k
L
0.25 0.35 0.30
z
z1
-
-
-
-
0.225
0.175
L
All Dimensions in mm
e
z
b
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.
U-DFN2020-6 (Type B)
X2
C
Value
Dimensions
(in mm)
0.650
0.150
0.450
0.350
0.600
1.650
0.500
1.000
2.300
C
G
G1
X
X1
X2
Y
Y1
Y2
X1( 2x)
Y1( 2x)
Y2
G
Y
G1
X
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DMC1030UFDBQ
Document number: DS38242 Rev.1 - 2
DMC1030UFDBQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
www.diodes.com
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January 2016
© Diodes Incorporated
DMC1030UFDBQ
Document number: DS38242 Rev.1 - 2
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