DMC25D1UVT-7 [DIODES]
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET;
| 型号： | DMC25D1UVT-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
| 文件： | 总9页 (文件大小：649K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMC25D1UVT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
ID
Device
V(BR)DSS
RDS(ON)
TA = +25°C
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Q1
25V
0.5A
-3.9A
-3.5A
4Ω @ VGS = 4.5V
55mΩ @ VGS= -4.5V
70mΩ @ VGS= -2.5V
Q2
-12V
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Applications
DC-DC Converters
Power Management Functions
Load Switch
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.013 grams (Approximate)
D1
D2
S2
Q2
Vin, R1
Vout, C1
TSOT26
4
5
6
3
2
1
ON/OFF
R1, C1
Vout, C1
R2
G1
G2
Q1
Gate Protection
Diode
Gate Protection
Diode
S1
Top View
Top View
Internal circuit
Q2 P-Channel MOSFET
Q1 N-Channel MOSFET
Ordering Information (Note 4)
Part Number
DMC25D1UVT-7
DMC25D1UVT-13
Case
TSOT26
TSOT26
Packaging
3000 / Tape & Reel
10000 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
G2
D1
G1
S2
C6D = Product Type Marking Code
YM or YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
C6D
M = Month (ex: 9 = September)
S1
D2
D2
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
Code
C
D
E
F
G
H
I
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMC25D1UVT
Document number: DS37507 Rev. 2 - 2
DMC25D1UVT
Maximum Ratings – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
25
V
VDSS
-0.5
+8
Gate-Source Voltage
V
VGSS
0.5
1.2
1.5
A
A
A
Continuous Drain Current (Note 5) VGS = 4.5V
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 6)
ID
IS
IDM
Maximum Ratings – Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-12
Unit
V
Gate-Source Voltage
±8
V
VGSS
Steady State
-3.9
-17.4
-2.82
-40
A
A
A
Continuous Drain Current (Note 5) VGS = -4.5V
Note 9
ID
Continuous Drain Current (Note 5) VGS = -2.5V
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 6)
A
IS
-40
A
IDM
Thermal Characteristics
Characteristic
Symbol
Value
1.3
100
5
Unit
W
Power Dissipation (Note 5)
PD
Steady State
Note 9
Thermal Resistance, Junction to Ambient (Note 5)
°C/W
RθJA
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
36
°C/W
°C
RθJC
-55 to +150
TJ, TSTG
Electrical Characteristics – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
25
—
—
—
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 8V, VDS = 0V
µA
nA
100
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.65
—
—
0.85
3.8
1.5
4
V
Ω
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 0.4A
VGS = 0V, IS = 0.29A
Static Drain-Source On-Resistance
Diode Forward Voltage
0.76
1.2
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
27.6
8.5
3.3
25
—
—
—
—
—
—
—
—
—
—
—
—
Ciss
Coss
Crss
Rg
VDS = 10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
VDS = 0V, VGS = 0V, f = 1MHz
0.4
0.9
0.1
0.04
2.5
1.4
5.7
4.3
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Qg
Qg
nC
ns
VDS = 5V, ID = 0.2A
Qgs
Qgd
tD(ON)
tR
Turn-On Delay Time
Turn-On Rise Time
VGS = 4.5V, VDS = 6V,
RG = 50Ω, ID = 0.5A
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1in. square copper plate.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
9. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
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© Diodes Incorporated
DMC25D1UVT
Document number: DS37507 Rev. 2 - 2
DMC25D1UVT
Electrical Characteristics – Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-12
—
—
—
—
—
-1
V
BVDSS
IDSS
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
Gate-Source Leakage
µA
µA
VDS = -6.4V, VGS = 0V
VGS = ±8V, VDS = 0V
—
±10
IGSS
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage
-0.35
—
—
—
—
—
—
-1.5
55
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -2.8A
VGS = -2.5V, ID = -2.5A
VGS = -1.8V, ID = -2.0A
VGS = 0V, IS = -0.6A
—
Static Drain-Source On-Resistance
70
—
100
-1.2
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
9.7
393
1.9
—
—
—
—
—
—
—
—
—
—
—
Ciss
Coss
Crss
Rg
VDS = -6V, VGS = 0V,
f = 1MHz
Output Capacitance
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
1846
24.5
3.3
VDS = 0V, VGS = 0V, f = 1MHz
VDS = -6V, ID = -2.8A
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
Gate-Drain Charge
Qg
nC
Qgs
Qgd
tD(ON)
tR
7.3
1.2
Turn-On Delay Time
Turn-On Rise Time
2.7
VGS = -4.5V, VDS = -6V,
RG = 6Ω, ID = -2.8A
µs
9.8
Turn-Off Delay Time
Turn-Off Fall Time
tD(OFF)
tF
6.5
Notes:
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to production testing.
Typical Characteristics - N-CHANNEL
1
0.8
0.6
0.4
0.2
0
1.5
VGS=4.5V
-55℃
VDS= 5V
VGS=2.5V
25℃
125℃
150℃
VGS=4.0V
1.2
0.9
0.6
0.3
0.0
85℃
VGS=3.0V
VGS=2.0V
VGS=3.5V
VGS=1.5V
VGS=1.2V
2.5
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
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DMC25D1UVT
Document number: DS37507 Rev. 2 - 2
DMC25D1UVT
1.5
1.2
0.9
0.6
0.3
0
5
4
3
2
1
0
VGS=4.5V
ID=400mA
0
0.3
0.6
0.9
1.2
1.5
1
2
3
4
5
6
7
8
ID, DRAIN-SOURCE CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
1.8
1.6
1.4
1.2
1
3
2.5
2
VGS= 4.5V
150℃
VGS=4.5V, ID=400mA
125℃
85℃
1.5
1
VGS=2.5V, ID=200mA
25℃
-55℃
0.8
0.6
0.5
0
-50
-25
0
25
50
75
100 125 150
0
0.3
0.6
0.9
1.2
1.5
TJ, JUNCTION TEMPERATURE (℃)
ID, DRAIN CURRENT (A)
Figure 6. On-Resistance Variation with Temperature
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
2
1.5
1
1.2
1.1
1
VGS=2.5V, ID=200mA
ID=1mA
0.9
0.8
0.7
0.6
0.5
0.4
ID=250μA
VGS=4.5V, ID=400mA
0.5
0
-50
-25
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
0
25
50
75
100 125 150
-50 -25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
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DMC25D1UVT
Document number: DS37507 Rev. 2 - 2
DMC25D1UVT
1.5
1.4
1.3
1.2
1.1
1
100
10
1
f=1MHz
Ciss
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Coss
VGS=0V, TA=150℃
VGS=0V, TA=125℃
VGS=0V, TA=85℃
VGS=0V, TA=25℃
VGS=0V, TA=-55℃
Crss
0
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
10
10
8
RDS(ON) Limited
PW=100μs
PW=1ms
PW=10ms
1
6
VDS=5V, ID=200mA
4
PW=100ms
PW=1s
0.1
TJ(MAX)=150℃
TA=25℃
Single Pulse
DUT on 1*MRP board
VGS=10V
2
PW=10s
DC
0
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Qg (nC)
1
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Gate Charge
Figure 12. SOA, Safe Operation Area
1
D=0.5
D=0.3
D=0.9
D=0.7
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJA(t)=r(t) * RθJA
RθJA=149℃/W
Duty Cycle, D=t1 / t2
D=Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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DMC25D1UVT
Document number: DS37507 Rev. 2 - 2
DMC25D1UVT
Typical Characteristics - P-CHANNEL
20
18
16
14
12
10
8
30.0
VDS= -5V
VGS=-2.5V
VGS=-3.0V
VGS=-4.5V
25.0
20.0
15.0
10.0
5.0
VGS=-2.0V
VGS=-1.8V
VGS=-8.0V
6
VGS=-1.5V
4
85℃
125℃
25℃
2
VGS=-1.2V
4 5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 14. Typical Output Characteristic
150℃
0.5
-55℃
0
0.0
0
1
1.5
2
2.5
3
0
1
2
3
VGS, GATE-SOURCE VOLTAGE (V)
Figure 15. Typical Transfer Characteristic
0.04
0.3
0.25
0.2
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
VGS=-2.5V
VGS=-4.5V
ID=-2.8A
0.15
0.1
0.05
0
ID=-2.5A
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
ID, DRAIN-SOURCE CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 16. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 17. Typical Transfer Characteristic
1.4
1.2
1
0.03
0.028
0.026
0.024
0.022
0.02
VGS=- 4.5V
125℃
150℃
85℃
25℃
VGS=-4.5V, ID=-5.0A
VGS=-2.5V, ID=-3.0A
-55℃
0.018
0.016
0.014
0.012
0.01
0.8
0.6
-50
-25
0
25
TJ, JUNCTION TEMPERATURE (℃)
Figure 19. On-Resistance Variation with Temperature
50
75
100 125 150
0
2
4
6
8
10 12 14 16 18 20
ID, DRAIN CURRENT(A)
Figure 18. Typical On-Resistance vs. Drain Current and
Temperature
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DMC25D1UVT
Document number: DS37507 Rev. 2 - 2
DMC25D1UVT
0.05
0.04
0.03
0.02
0.01
0
1.5
1.2
0.9
0.6
0.3
0
VGS=-2.5V, ID=-3.0A
VGS=-4.5V, ID=-5.0A
ID=-1mA
ID=-250μA
-50
-25
0
25
50
75
100 125 150
-50 -25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
TJ, JUNCTION TEMPERATURE (℃)
Figure 20. On-Resistance Variation with Temperature
Figure 21. Gate Threshold Variation vs. Junction
Temperature
20
18
16
14
12
10
8
10000
f=1MHz
1000
100
10
Coss
VGS=0V, TA=85℃
VGS=0V, TA=125℃
Ciss
6
VGS=0V, TA=150℃
VGS=0V, TA=25℃
4
Crss
2
VGS=0V, TA=-55℃
0
1
0
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10
12
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 23. Typical Junction Capacitance
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 22. Diode Forward Voltage vs. Current
100
10
8
6
4
2
0
PW=100μs
RDS(ON) Limited
PW=1ms
PW=10ms
1
PW=100ms
PW=1s
VDS=-6V, ID=-2.8A
TJ(MAX)=150℃
TA=25℃
Single Pulse
DUT on 1*MRP board
VGS= -10V
0.1
0.01
PW=10s
DC
0.01
0.1
1
10
100
0
5
10
15
20
25
30
35
40
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 25. SOA, Safe Operation Area
Qg (nC)
Figure 24. Gate Charge
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DMC25D1UVT
Document number: DS37507 Rev. 2 - 2
DMC25D1UVT
Application Circuit
Q2
In
Out
C1
R1
Load
Ci
Ca
Q1
On/Off
R2
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
TSOT26
Dim Min Max Typ
D
e1
A
A1
A2
D
E
E1
b
c
e
e1
L
1.00
2.90
2.80
1.60
0.95
1.90
0.01 0.10
0.84 0.90
E
E1
L2
c
0.30 0.45
0.12 0.20
L
4x1
e
6x b
0.30 0.50
L2
θ
θ1
0.25
4°
0°
4°
8°
12°
A2
A1
A
All Dimensions in mm
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Document number: DS37507 Rev. 2 - 2
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Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
C
Dimensions Value (in mm)
C
X
Y
0.950
0.700
1.000
3.199
Y1
Y1
Y (6x)
X (6x)
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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Document number: DS37507 Rev. 2 - 2
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PANASONIC
DMC26103
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, MINI5-G3-B, 5 PIN
PANASONIC
DMC261030R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, MO-178AA, HALOGEN FREE AND ROHS COMPLIANT, MINI5-G3-B, MO-178, SC-74A, 5 PIN
PANASONIC
DMC26104
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, MINI5-G3-B, 5 PIN
PANASONIC
DMC261040R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, MO-178AA, HALOGEN FREE AND ROHS COMPLIANT, MINI5-G3-B, MO-178, SC-74A, 5 PIN
PANASONIC
DMC26105
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, MINI5-G3-B, 5 PIN
PANASONIC
DMC261050R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, MO-178AA, HALOGEN FREE AND ROHS COMPLIANT, MINI5-G3-B, MO-178, SC-74A, 5 PIN
PANASONIC
DMC261060R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, MO-178AA, HALOGEN FREE AND ROHS COMPLIANT, MINI5-G3-B, MO-178, SC-74A, 5 PIN
PANASONIC
DMC2610E0R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, MO-178AA, HALOGEN FREE AND ROHS COMPLIANT, MINI5-G3-B, MO-178, SC-74A, 5 PIN
PANASONIC
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