DMC26103 [PANASONIC]

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, MINI5-G3-B, 5 PIN;


型号：	DMC26103
厂家：	PANASONIC
描述：	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, MINI5-G3-B, 5 PIN 开关光电二极管晶体管
文件：	总4页 (文件大小：423K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

This product complies with the RoHS Directive (EU 2002/95/EC).

DMC26103

Silicon NPN epitaxial planar type

For digital circuits

 Features

ꢀPackage

 Low collector-emitter saturation voltage V_CE(sat)

 Contributes to miniaturization of sets, reduction of component count.

 Eco-friendly Halogen-free package

ꢀCode

Mini5-G3-B

ꢀPin Name

1: Base (Tr1)

4: Collector (Tr2)

ꢀBasic Part Number

2: Emitter (Common) 5: Collector (Tr1)

3: Base (Tr2)

Dual DRC2144E (Common emitter)

ꢀMarking Symbol: G9

ꢀInternal Connection

 Packaging

Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)

(C1)

(C2)

ꢀAbsolute Maximum Ratings T = 25°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector current

Symbol

V_CBO

V_CEO

I_C

Rating

Unit

Tr1

Tr2

R₂

R₁

100

°C

(B1) (E) (B2)

Total power dissipation

P_T

300

Junction temperature

T_j

150

R₁

kΩ

Resistance value

Storage temperature

stg

–55 to +150

°C

R₂

ꢀElectrical Characteristics T = 25°C±3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

V_CBOI_C= 10 µA, I_E= 0

V_CEOI_C= 2 mA, I_B= 0

I_CBO

I_CEO

I_EBO

h_FE

V_CB= 50 V, I_E= 0

V_CE= 50 V, I_B= 0

V_EB= 6 V, I_C= 0

0.1

0.5

0.1

µA



V_CE= 10 V, I_C= 5 mA

h_FE

(Small/Large)

h_FEratio ^*

V_CE= 10 V, I_C= 5 mA

0.50

0.99



Collector-emitter saturation voltage

Input voltage (ON)

V_CE(sat)I_C= 10 mA, I_B= 0.5 mA

V_I(on)V_CE= 0.2 V, I_C= 5 mA

0.25

3.6

Input voltage (OFF)

Input resistance

V_I(off)V_CE= 5 V, I_C= 100 µA

0.8

+30%

1.2

R₁

–30%

0.8

kΩ



Resistance ratio

R₁/ R₂

1.0

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Ratio between 2 elements

Publication date: December 2010

Ver. CED

This product complies with the RoHS Directive (EU 2002/95/EC).

DMC26103

P_T T

I_C V_CE

h_FE I_C

120

100

400

_CE= 10 V

T_a= 25°C

_B= 500 µA

450 µA

400 µA

300

200

100

T_a= 85°C

300

200

100

25°C

350 µA

300 µA

250 µA

−30°C

200 µA

150 µA

100 µA

50 µA

0.1

100

120

160

200

(

)

Ambient temperature T_a°C

Collector current I_C(mA)

Collector-emitter voltage V_CE(V)

V_CE(sat) I_C

I_O V_IN

V_IN I_O

100

_O= 0.2 V

V_O= 5 V

I_C/ I_B= 20

T_a= 85°C

25°C

−30°C

10⁻¹

10⁻²

10⁻³

25°C

T_a= 85°C

−30°C

0.1

−30°C

25°C

0.1

0.01

0.1

100

0.1

100

0.5

1.0

1.5

2.0

Output current I_O(mA)

Collector current I_C(mA)

(V)

Input voltage V_IN

Ver. CED

This product complies with the RoHS Directive (EU 2002/95/EC).

DMC26103

Mini5-G3-B

Unit: mm

+0.10

−0.05

+0.05

0.30

0.13

−0.02

(0.95)

1.9 ±0.1

+0.20

−0.05

2.90

Ver. CED

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semiconductors described in this book

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