DMG1026UV-7 [DIODES]
Small Signal Field-Effect Transistor, 0.38A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6;
| 型号： | DMG1026UV-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 0.38A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMG1026UV
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
•
•
•
•
•
•
•
Low On-Resistance
ID
V(BR)DSS
RDS(ON)
TA = +25°C
Low Input Capacitance
Fast Switching Speed
440mA
410mA
1.8Ω @ VGS = 10V
2.1Ω @ VGS = 4.5V
60V
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON) and yet maintain superior switching
)
Mechanical Data
performance, making it ideal for high efficiency power management
applications.
•
•
Case: SOT563
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.006 grams (approximate)
Applications
•
•
•
•
•
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
•
•
DC-DC Converters
Power Management Functions
SOT563
ESD PROTECTED TO 2kV
Top View
Top View
Pin Definition/Schematic
Bottom View
Ordering Information (Note 4)
Part Number
DMG1026UV-7
Case
SOT563
Packaging
3000 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
UA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
UA1
YM
M = Month (ex: 9 = September)
Date Code Key
Year
2009
2010
2011
2012
2013
2014
2015
2016
Code
W
X
Y
Z
A
B
C
D
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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February 2014
© Diodes Incorporated
DMG1026UV
Document number: DS35068 Rev. 6 - 2
DMG1026UV
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
60
Unit
V
Gate-Source Voltage
±20
V
VGSS
Steady
Continuous Drain Current (Note 5) VGS = 10V
State
TA = +25°C
TA = +85°C
TA = +25°C
TA = +85°C
TA = +25°C
TA = +85°C
TA = +25°C
TA = +85°C
410
300
mA
mA
mA
ID
ID
ID
440
320
Continuous Drain Current (Note 6) VGS = 10V
Continuous Drain Current (Note 5) VGS = 4.5V
t ≤ 10s
Steady
State
380
270
410
295
mA
A
Continuous Drain Current (Note 6) VGS = 4.5V
Pulsed Drain Current (Note 7)
t ≤ 10s
ID
1.0
IDM
Thermal Characteristics
Characteristic
Symbol
PD
Max
0.58
213
Unit
W
Power Dissipation (Note 5)
°C/W
W
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5)
Power Dissipation (Note 6) t ≤ 10s
RθJA
0.65
192
PD
°C/W
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 6) t ≤ 10s
Operating and Storage Temperature Range
RθJA
-55 to +150
°C
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
—
60
—
—
—
—
1.0
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 50V, VGS = 0V
VGS = ±5V, VDS = 0V
VGS = ±10V, VDS = 0V
µA
nA
nA
Zero Gate Voltage Drain Current TJ = +25°C
±50
±150
Gate-Source Leakage
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
0.5
—
—
1.2
1.4
580
—
1.8
1.8
2.1
—
V
VGS(th)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 500mA
GS = 4.5V, ID = 200mA
Static Drain-Source On-Resistance
ꢀ
RDS (ON)
—
V
Forward Transfer Admittance
Continuous Source Current (Note 8)
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
80
—
mS
mA
V
|Yfs|
IS
VDS = 10V, ID = 200mA
200
1.3
-
—
0.8
VSD
VGS = 0V, IS = 200mA
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
32
Ciss
Coss
Crss
Rg
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
4.4
pF
ꢀ
Reverse Transfer Capacitance
Gate Resistance
2.9
126
0.45
0.08
0.08
3.4
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg
VGS = 4.5V, VDS = 10V,
ID = 250mA
Gate-Source Charge
pC
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
Turn-On Delay Time
ns
ns
ns
ns
VGS = 10V, VDS = 30V,
RL = 150ꢀ, RG = 25ꢀ,
ID = 200mA
Turn-On Rise Time
3.4
Turn-Off Delay Time
26.4
16.3
tD(off)
tf
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 PCB with minimum recommended pad layout, measured in t ≤ 10s.
7. Repetitive rating, pulse width limited by junction temperature, 10µs pulse, duty cycle = 1%
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
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February 2014
© Diodes Incorporated
DMG1026UV
Document number: DS35068 Rev. 6 - 2
DMG1026UV
1,000
800
1.0
0.8
V
= 4.5V
GS
V
= 5V
DS
V
= 4.0V
GS
V
= 3.5V
GS
V
= 3.0V
GS
V
= 2.5V
GS
600
400
0.6
0.4
V
= 2.0V
T
= 150°C
GS
A
0.2
0
200
0
T
= 125°C
A
T
A
= 85°C
T
= 25°C
A
V
= 1.5V
GS
T
= -55°C
A
0
0.5
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
Figure 2 Typical Transfer Characteristic
5
4
3
2
V
= 4.5V
GS
T
= 150°C
A
3
2
V
= 4.5V
= 10V
GS
T
= 125°C
A
T
= 85°C
A
V
GS
1
T
T
= 25°C
A
1
= -55°C
A
0
0
0
0
200
400
600
800
1,000
200
400
600
800
1,000
ID, DRAIN CURRENT (mA)
ID, DRAIN-SOURCE CURRENT (mA)
Figure 4 Typical On-Resistance
vs. Drain Current and Temperature
Figure 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
2.5
3.0
2.5
2.0
1.5
1.0
2.0
1.5
V
I
= 4.5V
GS
= 200mA
D
V
= 4.5V
GS
I
= 200mA
D
V
= 10V
1.0
GS
I
= 500mA
D
V
= 10V
GS
0.5
0
I
= 500mA
0.5
0
D
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
TA, AMBIENT TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
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© Diodes Incorporated
DMG1026UV
Document number: DS35068 Rev. 6 - 2
DMG1026UV
1.6
1.4
1,000
800
1.2
I
= 1mA
D
1.0
0.8
T
= 25°C
600
400
A
I
= 250µA
D
0.6
0.4
200
0
0.2
0
-50 -25
0
25
50
75 100 125 150
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
TA, AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
Figure 8 Diode Forward Voltage vs. Current
100
10,000
1,000
f = 1MHz
T
T
= 150°C
= 125°C
A
C
iss
A
10
100
C
T
= 85°C
= 25°C
oss
A
C
10
1
rss
T
A
1
0
5
10 15 20 25 30 35 40 45 50
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Leakage Current
vs. Drain-Source Voltage
0
5
10
15
20
25
30
35 40
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Total Capacitance
10
1
10
8
P
= 10µs
W
V
I
= 15V
DS
R
DS(on)
= 800mA
D
Limited
6
4
DC
P
= 10s
0.1
0.01
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
P
= 100µs
W
2
0
0.001
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.0
1.2
VDS, DRAIN-SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 12 SOA, Safe Operation Area
Figure 11 Gate Charge
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© Diodes Incorporated
DMG1026UV
Document number: DS35068 Rev. 6 - 2
DMG1026UV
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
(t) = r(t) * R
θJA
θJA
R
= 220°C/W
θJA
D = 0.02
0.01 D = 0.01
P(pk)
T
t
1
t
2
D = 0.005
- T = P * R (t)
J
A
θJA
Duty Cycle, D = t /t
1
2
D = Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Figure 13 Transient Thermal Response
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
SOT563
Dim Min
Max
Typ
B
C
A
B
C
D
G
H
K
L
0.15 0.30 0.20
1.10 1.25 1.20
1.55 1.70 1.60
-
-
0.50
D
0.90 1.10 1.00
1.50 1.70 1.60
0.55 0.60 0.60
0.10 0.30 0.20
0.10 0.18 0.11
G
H
M
M
K
All Dimensions in mm
L
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C2
C2
Dimensions Value (in mm)
Z
G
2.2
1.2
C1
X
Y
C1
C2
0.375
0.5
1.7
G
Y
Z
0.5
X
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© Diodes Incorporated
DMG1026UV
Document number: DS35068 Rev. 6 - 2
DMG1026UV
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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© Diodes Incorporated
DMG1026UV
Document number: DS35068 Rev. 6 - 2
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