DMG3413L [DIODES]

Low On-Resistance;


型号：	DMG3413L
厂家：	DIODES INCORPORATED
描述：	Low On-Resistance
文件：	总6页 (文件大小：184K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DMG3413L

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits



Low On-Resistance

I_D

V_(BR)DSS

R_{DS(on) max}

T_A= +25°C

Low Input Capacitance

Fast Switching Speed

3.0A

2.5A

95mΩ @ V_GS= -4.5V

130mΩ @ V_GS= -2.5V

-20V

Low Input/Output Leakage

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 standards for High Reliability

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R_DS(ON)and yet maintain superior switching

)

Mechanical Data

performance, making it ideal for high efficiency power management

applications.



Case: SOT23

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram

Applications



DC-DC Converters

Power Management Functions

Analog Switch

Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

Weight: 0.0072 grams (approximate)



Drain

SOT23

Gate

Source

Top View

Pin Configuration

Internal Schematic

Ordering Information (Note 4)

Part Number

Case

Packaging

DMG3413L-7

SOT23

3,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

G33 = Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

G33

= Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or = Year (ex: A = 2013)

M = Month (ex: 9 = September)

Chengdu A/T Site

Shanghai A/T Site

Date Code Key

Year

2010

2011

2012

2013

2014

2015

2016

2017

2018

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 6

www.diodes.com

September 2013

DMG3413L

Document number: DS35051 Rev. 4 - 2

DMG3413L

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

0.7

184

115

P_D

Steady State

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

°C/W

R_θJA

P_D

t<10s

1.3

Steady State

t<10s

Thermal Resistance, Junction to Ambient (Note 6)

R_θJA

°C/W

°C

Thermal Resistance, Junction to Case

R_θJC

Operating and Storage Temperature Range

-55 to +150

_J,T_STG

Thermal Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

-20

Units

Gate-Source Voltage

V_GSS

8

_A= +25°C

_A= +70°C

Steady

State

3.0

2.4

I_D

Continuous Drain Current (Note 6) V_GS= -4.5V

Continuous Drain Current (Note 6) V_GS= -2.5V

T_A= +25°C

T_A= +70°C

3.7

2.9

t<10s

_A= +25°C

_A= +70°C

Steady

State

2.5

2.0

T_A= +25°C

T_A= +70°C

3.2

2.5

t<10s

Maximum Continuous Body Diode Forward Current (Note 6)

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

1.9

I_S

I_DM

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

Symbol

Min

Typ

Max

Unit

Test Condition

—

-20

—

BV_DSS

I_DSS

V_GS= 0V, I_D= -250µA

V_DS= -16V, V_GS= 0V

V_GS= 8V, V_DS= 0V

-1.0

±100

µA

—

I_GSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-0.6

—

-0.55

-1.3

V_GS(th)

V_DS= V_GS, I_D= -250µA

_GS= -4.5V, I_D= -3.0A

Static Drain-Source On-Resistance

130

190

mΩ

R_DS(ON)

V_GS= -2.5V, I_D= -2.6A

V_GS= -1.8V, I_D= -1A

V_DS= -5V, I_D= -3A

V_GS= 0V, I_S= -1A

146

—

Forward Transfer Admittance

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

|Y_fs|

V_SD

-0.8

-1.25

—

857

Ω

C_iss

C_oss

C_rss

R_g

V_DS= -10V, V_GS= 0V

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistnace

12.3

9.0

V_DS= 0V, V_GS= 0V, f = 1.0MHz

V_GS= -4.5V, V_DS= -15V, I_D= -4A

Total Gate Charge

Q_g

Gate-Source Charge

Gate-Drain Charge

1.6

Q_gs

Q_gd

t_D(on)

t_r

1.1

Turn-On Delay Time

9.7

Turn-On Rise Time

17.7

268.8

64.2

V_DS= -15V, V_GS= -10V,

R_L= 15, R_G= 6.0I_D= -1A

Turn-Off Delay Time

t_D(off)

t_f

Turn-Off Fall Time

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

2 of 6

www.diodes.com

September 2013

DMG3413L

Document number: DS35051 Rev. 4 - 2

DMG3413L

-V

= 10V

-V

= 4.5V

= -5.0V

-V = 4.0V

-V = 3.5V

-V = 3.0V

-V = 2.5V

-V = 2.0V

= 150C

= 85C

= 125



= 25C

-V = 1.5V

= -55C

0.5

1.0

1.5

2.0

2.5

3.0

-V_DS, DRAIN -SOURCE VOLTAGE(V)

-V_GS, GATE-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

Fig. 2 Typical Transfer Characteristics

0.20

0.16

0.14

0.12

= -4.5V

0.10

0.08

0.06

0.04

= 150C

0.12

0.08

0.04

= 125C

= 85C

= 25C

= -55C

0.02

-I_D, DRAIN SOURCE CURRENT

-I_D, DRAIN SOURCE CURRENT (A)

Fig. 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

Fig. 4 Typical On-Resistance vs.

Drain Current and Temperature

1.6

1.4

1.2

0.20

0.16

-V

= 2.5V

-I = 3.0A

0.12

0.08

-V

= 4.5V

1.0

0.8

0.6

-I = 5A

0.04

-50 -25

T_J, JUNCTION TEMPERATURE (

Fig. 6 On-Resistance Variation with Temperature

75 100 125 150

-50 -25

T_J, JUNCTION TEMPERATURE (

Fig. 5 On-Resistance Variation with Temperature

75 100 125 150

C)



3 of 6

www.diodes.com

September 2013

DMG3413L

Document number: DS35051 Rev. 4 - 2

DMG3413L

1.6

1.2

0.8

0.4

-50 -25

T_A, AMBIENT TEMPERATURE (°C)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

75 100 125 150

0.2

0.4

0.6

0.8

1.2

1.4

-V_SD, SOURCE-DRAIN VOLTAGE (V)

Fig. 8 Diode Forward Voltage vs. Current

10,000

f = 1MHz

1,000

iss

100

oss

rss

Q_g, TOTAL GATE CHARGE (nC)

-V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 10 Gate-Charge Characteristics

Fig. 9 Typical Junction Capacitance

100

400

350

Single Pulse

= 176

= R



C/W



= 10µs

* r

JA(t)

JA

(t)

DS(on)

-T = P * R

JA(t)

Limited

300

250

200

= 10s

= 1s

150

100

= 100ms

= 10ms

0.1

T_J(max)= 150°C

T_A= 25°C

= 1ms

= 100µs

V_GS= -8V

Single Pulse

DUT on 1 * MRP Board

0.01

0.00001

0.001

0.1

1,000

0.1

100

t₁, PULSE DURATION TIME (sec)

-V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 11 Single Pulse Maximum Power Dissipation

Fig. 12 SOA, Safe Operation Area

4 of 6

www.diodes.com

September 2013

DMG3413L

Document number: DS35051 Rev. 4 - 2

DMG3413L

D = 0.9

D = 0.7

D = 0.5

D = 0.3

0.1

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

0.01

(t)=r(t) * R

JA

=176°C/W



Duty Cycle, D=t1/ t2

Single Pulse

0.001

0.00001

0.0001

0.001

0.01

0.1

100

1,000

t1, PULSE DURATION TIMES (sec)

Fig. 13 Transient Thermal Resistance

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

SOT23

Dim

Min

Max

0.51

1.40

2.50

1.03 0.915

0.60 0.535

Typ

0.40

1.30

2.40



0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013 0.10

0.903 1.10

2.05

3.00

1.83

2.90

0.05

1.00

0.400

0.55

0.11

0.45

0.085 0.18

0° 8°

0.61

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Dimensions Value (in mm)

2.9

0.8

0.9

2.0

1.35

5 of 6

www.diodes.com

September 2013

DMG3413L

Document number: DS35051 Rev. 4 - 2

DMG3413L

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

6 of 6

www.diodes.com

September 2013

DMG3413L

Document number: DS35051 Rev. 4 - 2

DMG3413L [DIODES]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E