DMG3N60SJ3 [DIODES]
Power Field-Effect Transistor,;
| 型号： | DMG3N60SJ3 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：432K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMG3N60SJ3
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
BVDSS
(@ TJ Max)
ID
Low On-Resistance
RDS(ON) Max
@TC = +25°C
High BVDSS Rating for Power Application
Low Input Capacitance
650V
2.8A
3.5Ω @ VGS = 10V
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Case: TO251 (Type TH)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Motor Control
Backlighting
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
DC-DC Converters
Power Management Functions
G
D
S
Top View
Pin Configuration
Internal Schematic
Bottom View
Top View
Ordering Information (Note 4)
Part Number
Case
Packaging
DMG3N60SJ3
TO251 (Type TH)
75 Pieces/Tube
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
=Manufacturer’s Marking
3N60SJ = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 17 = 2017)
WW or WW = Week Code (01 to 53)
3N60SJ
YYWW
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January 2017
© Diodes Incorporated
DMG3N60SJ3
Document number: DS39314 Rev. 2 - 2
DMG3N60SJ3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
600
±30
Unit
V
Gate-Source Voltage
V
VGSS
Steady
TC = +25°C
TC = +100°C
2.8
1.8
A
Continuous Drain Current (Note 5) VGS = 10V
State
ID
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 60mH (Note 7)
Avalanche Energy, L = 60mH (Note 7)
Peak Diode Recovery dv/dt
2.5
4.2
1.0
33
5
A
A
IS
IDM
A
IAS
mJ
V/ns
EAS
dv/dt
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
41
TC = +25°C
TC = +100°C
Total Power Dissipation (Note 5)
W
PD
16
49
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
RθJA
RθJC
°C/W
°C
3.0
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
600
V
1
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VGS = ±30V, VDS = 0V
µA
nA
100
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
2.0
4.0
3.5
1.5
V
Ω
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250µA
VGS = 10V, ID = 1.5A
VGS = 0V, IS = 3.0A
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
354
41
Ciss
Coss
Crss
RG
Output Capacitance
pF
Ω
VDS = 25V, f = 1.0MHz, VGS = 0V
VDS = 0V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance
4
Gate Resistance
2.6
12.6
1.7
7.1
10.6
22
Total Gate Charge
QG
VDD = 480V, ID = 2.5A,
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
nC
QGS
QGD
tD(ON)
tR
Turn-On Delay Time
Turn-On Rise Time
VDD = 300V, RG = 25Ω, ID = 2.5A,
VGS = 10V
ns
Turn-Off Delay Time
34
tD(OFF)
tF
Turn-Off Fall Time
28
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
198
952
ns
tRR
dI/dt = 100A/μs, VDS = 100V,
nC
IF = 2.5A
QRR
Notes:
5. Device mounted on infinite heatsink.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
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January 2017
© Diodes Incorporated
DMG3N60SJ3
Document number: DS39314 Rev. 2 - 2
DMG3N60SJ3
5
4
3
2
1
0.8
0.6
0.4
0.2
0
V
= 20V
GS
V
= 10V
DS
V
= 10V
GS
V
= 5V
GS
V
= 6V
GS
T
= 150°C
A
V
= 8V
GS
T
T
= 125°C
= 85°C
T
= 25°C
A
A
A
V
= 4.5V
GS
T
= -55°C
A
1
0
V
= 4V
GS
2
2.5
3
3.5
4
4.5
5
0
5
10
15
20
25
30
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
4
3.5
3
10
8
V
= 10V
GS
I
= 1.5A
6
D
2.5
2
4
1.5
2
0
0.5
1
1.5
2
2.5
3
0
5
10
15
20
25
30
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
9
8
7
6
3
V
= 10V
GS
T
= 150°C
= 125°C
A
2.5
T
A
V
= 10V
= 4A
GS
2
I
T
= 85°C
D
A
5
4
3
2
1
0
1.5
T
= 25°C
A
1
0.5
0
T
= -55°C
A
0
0.5
1
1.5
2
2.5
3
-50 -25
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
25
50
75 100 125 150
0
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
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© Diodes Incorporated
DMG3N60SJ3
Document number: DS39314 Rev. 2 - 2
DMG3N60SJ3
8
7
6
5
4
3
2
1
3.8
3.6
3.4
3.2
3
I
= 1mA
D
V
I
= 10V
GS
I
= 250µA
D
= 1.5A
D
2.8
2.6
2.4
2.2
2
0
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
TJ, JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation vs. Junction Temperature
3
1000
f=1MHz
C
iss
2.5
100
2
1.5
1
C
oss
T
= 150°C
A
T
= 25°C
A
T
= 125°C
= 85°C
A
10
T
A
T
= -55°C
A
C
rss
0.5
0
1
0
5
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
8
10
R
DS(on)
P
= 10µs
P
= 1µs
W
W
Limited
P
= 100µs
W
P
= 1s
W
1
V
I
= 480V
P
= 100ms
DS
6
W
= 2.5A
D
P
= 10ms
W
P
= 1ms
W
4
0.1
0.01
TJ(max) = 150°C
TC = 25°C
2
VGS = 10V
Single Pulse
DUT on Infinite Heatsink
0
0
2
4
6
8
10
12
14
1
10
100
1000
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
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© Diodes Incorporated
DMG3N60SJ3
Document number: DS39314 Rev. 2 - 2
DMG3N60SJ3
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
RJA(t) = r(t) * RJA
RJA = 72°C/W
D = Single Pulse
Duty Cycle, D = t1/ t2
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
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© Diodes Incorporated
DMG3N60SJ3
Document number: DS39314 Rev. 2 - 2
DMG3N60SJ3
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
TO251 (Type TH)
E
L4
c
L3
b3
TO251 (Type TH)
0
Dim
A
Min Max Typ
2.20 2.40 2.30
0.97 1.17 1.07
0.68 0.90 0.78
5.20 5.50 5.33
0.43 0.63 0.53
5.98 6.22 6.10
5.30 REF
A2
b
b3
c
D
D1
e
E
E1
H
E1
L5
D
P
D1
0
H
0
2.286 BSC
A2
6.40 6.80 6.60
4.63 5.03 4.83
16.22 16.82 16.52
0.40REF
L
k
b
L
9.15 9.65 9.40
0.88 1.28 1.02
0.75 REF
1.65 1.95 1.80
1.20
L3
L4
L5
PØ
θ
e
01
5°
5°
9°
9°
7°
7°
k
θ1
A
All Dimensions in mm
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© Diodes Incorporated
DMG3N60SJ3
Document number: DS39314 Rev. 2 - 2
DMG3N60SJ3
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
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© Diodes Incorporated
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Document number: DS39314 Rev. 2 - 2
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