DMG4812SSS [DIODES]
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE; N沟道增强模式,肖特基二极管的MOSFET型号: | DMG4812SSS |
厂家: | DIODES INCORPORATED |
描述: | N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE |
文件: | 总6页 (文件大小:152K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DMG4812SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Product Summary
Features
•
DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
ID max
V(BR)DSS
RDS(on)
TA = 25°C
•
Low RDS(ON) - minimizes conduction losses
•
•
Low VSD - reducing the losses due to body diode conduction
10.7A
9.6A
15mΩ @ VGS= 10V
30V
Low Qrr - lower Qrr of the integrated Schottky reduces body
diode switching losses
18.5mΩ @ VGS= 4.5V
•
Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
•
Avalanche rugged – IAR and EAR rated
•
•
•
•
Lead Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
ESD Protected
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
•
•
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.072 grams (approximate)
•
•
•
•
•
DC-DC Converters
Power management functions
S
D
S
S
G
D
D
D
Top View
Top View
ESD PROTECTED
Internal Schematic
Ordering Information (Note 3)
Part Number
DMG4812SSS-13
Case
SO-8
Packaging
2500 / Tape & Reel
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
8
5
Logo
G4812SS
YY WW
Part no.
Xth week: 01 ~ 53
Year: “09” = 2009
Year: “10” = 2010
1
4
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January 2011
© Diodes Incorporated
DMG4812SSS
Document number: DS35071 Rev. 2 - 2
DMG4812SSS
Maximum Ratings @T = 25°C unless otherwise specified
A
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Unit
V
Gate-Source Voltage
±12
V
VGSS
Steady
Continuous Drain Current (Note 4) VGS = 10V
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 85°C
TA = 25°C
TA = 85°C
8
A
A
A
ID
ID
ID
6.4
10.7
8.6
9.6
7.7
t ≤ 10 sec
t ≤ 10 sec
Continuous Drain Current (Note 5) VGS = 10V
Continuous Drain Current (Note 5) VGS = 4.5V
Pulsed Drain Current (Note 6)
45
13
A
A
IDM
Avalanche Current (Notes 6 & 7)
IAR
Repetitive Avalanche Energy (Notes 6 & 7) L = 0.3mH
25.4
mJ
EAR
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
Symbol
PD
Value
1.54
81
Unit
W
°C/W
W
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4)
Power Dissipation (Note 5)
RθJA
2.8
PD
45
°C/W
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5)
Operating and Storage Temperature Range
RθJA
-55 to +150
°C
TJ, TSTG
Electrical Characteristics @ TA = 25°C unless otherwise stated
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
-
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = 1mA
VDS = 30V, VGS = 0V
VGS = ±12V, VDS = 0V
150
±100
μA
nA
-
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1.0
-
2.3
15
18.5
-
V
VGS(th)
VDS = VGS, ID = 250μA
-
-
-
-
-
11
VGS = 10V, ID = 10.7A
Static Drain-Source On-Resistance
mΩ
RDS (ON)
16.5
20
V
GS = 4.5V, ID = 9.6A
Forward Transfer Admittance
Diode Forward Voltage
S
V
A
|Yfs|
VSD
IS
VDS = 5V, ID = 10.7A
0.36
-
0.5
5
VGS = 0V, IS = 1A
-
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
-
1849
158
123
2.0
-
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
V
DS =15V, VGS = 0V,
Output Capacitance
-
-
f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
-
-
0.54
4.0
VDS =0V, VGS = 0V, f = 1MHz
-
-
-
-
-
-
-
-
18.5
43
-
-
-
-
-
-
-
-
nC
nC
nC
nC
ns
ns
ns
ns
Total Gate Charge VGS = 4.5V
Total Gate Charge VGS = 10V
Gate-Source Charge
Qg
Qg
V
DS = 15V, VGS = 10V,
4.7
ID = 9.6A
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
4.0
Turn-On Delay Time
6.62
8.73
36.41
4.69
Turn-On Rise Time
V
GS = 10V, VDS = 15V,
Turn-Off Delay Time
RG = 3ꢀ, RL = 15ꢀ, ID = 1A
tD(off)
tf
Turn-Off Fall Time
Notes:
4. Device mounted on FR-4 PCB with minimum recommended pad layout. The value in any given application depends on the user’s specific board design.
5. Device mounted on 1” x 1” FR-4 PCB with high coverage 1 oz. Copper, single sided , device is measured at t ≤ 10 sec.
6. Repetitive rating, pulse width limited by junction temperature.
7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
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January 2011
© Diodes Incorporated
DMG4812SSS
Document number: DS35071 Rev. 2 - 2
DMG4812SSS
30
25
30
25
V
= 4.5V
GS
V
= 4.0V
V
= 5V
GS
DS
V
= 3.5V
GS
20
15
10
5
20
15
10
V
= 3.0V
GS
V
= 2.5V
GS
V
= 150°C
GS
V
= 125°C
= 85°C
GS
V
GS
5
0
V
V
= 25°C
GS
V
= 2.2V
V
= 2.0V
GS
GS
= -55°C
GS
0
0
0.5
1
1.5
2
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
Fig. 1 Typical Output Characteristic
0.05
0.04
0.04
0.03
V
= 4.5V
GS
0.03
0.02
T
= 150°C
A
0.02
T
= 125°C
= 85°C
A
T
A
V
= 4.5V
GS
T
= 25°C
A
0.01
0
0.01
0
T
= -55°C
A
V
= 10V
GS
0
5
10
15
20
25
30
0
5
10
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
15
20
25
30
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
vs. Drain Current and Temperature
0.03
0.02
1.6
1.4
1.2
V
= 4.5V
GS
I
= 10A
D
V
= 10V
GS
I
= 20A
D
V
= 4.5V
GS
I
= 10A
D
1.0
0.01
V
= 10V
GS
I
= 20A
D
0.8
0.6
0
-50 -25
-50 -25
0
25
50
75 100 125 150
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
Fig. 5 On-Resistance Variation with Temperature
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© Diodes Incorporated
DMG4812SSS
Document number: DS35071 Rev. 2 - 2
DMG4812SSS
30
25
3.0
2.5
2.0
1.5
1.0
20
15
10
I
= 100mA
D
T
= 25°C
A
5
0
0.5
0
-50 -25
0
25
50
75 100 125 150
0
0.2
0.4
0.6
0.8
1.0
1.2
TA, AMBIENT TEMPERATURE (°C)
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
Fig. 8 Diode Forward Voltage vs. Current
10,000
1,000
10,000
f = 1MHz
T
= 125°C
= 85°C
A
C
iss
1,000
T
A
100
C
oss
C
rss
100
10
10
1
T
= 25°C
A
0
10
20
30
0
5
10
15
20
25
30
VDS, DRAIN-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
Fig. 9 Typical Total Capacitance
10
8
V
I
= 15V
DS
= 12.7A
D
6
4
2
0
0
5
10 15 20 25 30 35 40 45
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
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© Diodes Incorporated
DMG4812SSS
Document number: DS35071 Rev. 2 - 2
DMG4812SSS
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
(t) = r(t) * R
θJA
θJA
R
= 80°C/W
D = 0.02
D = 0.01
D = 0.005
θ
JA
0.01
P(pk)
t
1
t
2
T
- T = P * R (t)
J
A θJA
Duty Cycle, D = t /t
1
2
D = Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
Package Outline Dimensions
SO-8
Dim
A
A1
A2
A3
b
Min
-
0.10
1.30
0.15
0.3
Max
1.75
0.20
1.50
0.25
0.5
E1
E
Gauge Plane
Seating Plane
A1
L
Detail ‘A’
D
E
E1
e
4.85
5.90
3.85
4.95
6.10
3.95
7°~9°
h
°
45
1.27 Typ
Detail ‘A’
h
L
θ
-
0.35
0.82
8°
A2
A3
A
0.62
0°
b
e
All Dimensions in mm
D
Suggested Pad Layout
X
Dimensions Value (in mm)
X
Y
C1
C2
0.60
1.55
5.4
C1
1.27
C2
Y
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© Diodes Incorporated
DMG4812SSS
Document number: DS35071 Rev. 2 - 2
DMG4812SSS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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© Diodes Incorporated
DMG4812SSS
Document number: DS35071 Rev. 2 - 2
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