DMG6601LVT-7
更新时间：2024-09-18 19:16:20
品牌：DIODES
描述：Small Signal Field-Effect Transistor, 3.8A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOT-26, 6 PIN
概述
规格参数
数据手册DMG6601LVT-7 概述
Small Signal Field-Effect Transistor, 3.8A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOT-26, 6 PIN 小信号场效应晶体管
DMG6601LVT-7 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Active | 包装说明： | SMALL OUTLINE, R-PDSO-G6 |
| Reach Compliance Code： | compliant | ECCN代码： | EAR99 |
| Factory Lead Time： | 15 weeks | 风险等级： | 1.7 |
| Samacsys Description： | Diodes Inc DMG6601LVT-7 Dual N/P-channel MOSFET, 2 A, 4.5 A, 30 V, 6-Pin TSOT-26 | 其他特性： | HIGH RELIABILITY |
| 配置： | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压： | 30 V |
| 最大漏极电流 (ID)： | 3.8 A | 最大漏源导通电阻： | 0.055 Ω |
| FET 技术： | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码： | R-PDSO-G6 |
| JESD-609代码： | e3 | 湿度敏感等级： | 1 |
| 元件数量： | 2 | 端子数量： | 6 |
| 工作模式： | ENHANCEMENT MODE | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | 260 | 极性/信道类型： | N-CHANNEL AND P-CHANNEL |
| 参考标准： | AEC-Q101 | 表面贴装： | YES |
| 端子面层： | Matte Tin (Sn) | 端子形式： | GULL WING |
| 端子位置： | DUAL | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| 晶体管应用： | SWITCHING | 晶体管元件材料： | SILICON |
| Base Number Matches： | 1 |
DMG6601LVT-7 数据手册
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PDF下载DMG6601LVT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features
Complementary MOSFET
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ID max
TA = +25°C
Device V(BR)DSS
RDS(ON) max
Package
55mΩ @ VGS = 10V
65mΩ @ VGS = 4.5V
TSOT26
TSOT26
3.8A
3.6A
Q1
Q2
30V
110mΩ @ VGS = -10V TSOT26
142mΩ @ VGS = -4.5V TSOT26
-2.5A
-2.1A
-30V
Description
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case: TSOT26
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Applications
Terminals: Finish NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208
e4
Backlighting
Power Management Functions
DC-DC Converters
Weight: 0.008 grams (approximate)
D1
D2
TSOT26
Q1
Q2
G1
S2
G2
1
2
3
6
5
4
D1
S1
D2
G1
G2
S1
N-Channel
S2
P-Channel
Top View
Top View
Device Schematic
Ordering Information (Note 4)
Part Number
Case
Packaging
DMG6601LVT-7
TSOT26
3K/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
66G = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
66G
M = Month (ex: 9 = September)
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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DMG6601LVT
Document number: DS35405 Rev. 4 - 2
DMG6601LVT
Maximum Ratings - Q1 and Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
Q1
30
Q2
-30
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
±12
±12
VGSS
TA = +25°C
TA = +70°C
Steady
State
3.8
3.0
-2.5
-2
A
A
ID
ID
Continuous Drain Current (Note 6) VGS = 10V
TA = +25°C
A = +70°C
4.5
3.4
-3
-2.3
t<10s
T
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 6)
1.5
20
-1.5
-15
A
A
IS
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
0.85
0.54
147
103
1.3
TA = +25°C
Total Power Dissipation (Note 5)
W
PD
TA = +70°C
Steady state
Thermal Resistance, Junction to Ambient (Note 5)
t<10s
°C/W
W
R
JA
TA = +25°C
Total Power Dissipation (Note 6)
PD
0.83
96
67
TA = +70°C
Steady state
Thermal Resistance, Junction to Ambient (Note 6)
t<10s
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
R
R
JA
°C/W
°C
36
JC
-55 to +150
T
J, TSTG
Electrical Characteristics - Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
30
-
-
-
-
-
1
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±12V, VDS = 0V
μA
nA
Zero Gate Voltage Drain Current @TJ = +25°C
Gate-Source Leakage
-
±100
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.5
1
34
38
49
6
1.5
55
65
85
-
V
VGS(th)
VDS = VGS, ID = 250μA
-
-
VGS = 10V, ID = 3.4A
Static Drain-Source On-Resistance
mΩ
RDS (ON)
V
V
GS = 4.5V, ID = 3A
GS = 2.5V, ID = 2A
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
-
-
S
V
|Yfs|
VSD
VDS = 5V, ID = 3.4A
VGS = 0V, IS = 1A
0.75
1.0
-
-
-
422
41
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
39
1.26
5.4
VDS = 0V, VGS = 0V, f = 1.0MHz
-
nC
nC
nC
nC
ns
ns
ns
ns
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
12.3
0.8
Qg
V
GS = 10V, VDS = 15V,
-
-
-
-
-
-
ID = 3.1A
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
1.2
Turn-On Delay Time
1.6
Turn-On Rise Time
7.4
VDS = 15V, VGS = 10V,
RL = 4.7ꢀ, RG =3ꢀ,
Turn-Off Delay Time
31.2
15.6
tD(off)
tf
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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DMG6601LVT
Document number: DS35405 Rev. 4 - 2
DMG6601LVT
Electrical Characteristics - Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-30
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = -250μA
-
-
-1
μA
nA
Zero Gate Voltage Drain Current @TJ = +25°C
Gate-Source Leakage
VDS = -30V, VGS = 0V
VGS = ±12V, VDS = 0V
±100
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.4
-0.8
70
-1.2
110
142
190
-
V
VGS(th)
VDS = VGS, ID = -250μA
-
-
V
V
V
GS = -10V, ID = -2.3A
GS = -4.5V, ID = -2A
GS = -2.5V, ID = -1A
Static Drain-Source On-Resistance
81
mꢀ
RDS (ON)
105
5.3
-0.8
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
-
-
S
V
|Yfs|
VSD
VDS = -5V, ID = -2.3A
VGS = 0V, IS = -1A
-1.0
-
-
-
-
-
541
46
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
ꢀ
Ciss
Coss
Crss
Rg
V
DS = -15V, VGS = 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Gate resistance
43
16.9
6.5
13.8
1.0
1.6
1.7
4.6
18.3
2.2
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC
nC
nC
ns
ns
ns
ns
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Qg
Qg
VGS = -10V, VDS = -15V,
ID = -2.3A
-
-
-
-
-
-
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
VDS = -15V, VGS = -10V,
RL = 6ꢀ, RG = 3ꢀ,
Turn-Off Delay Time
tD(off)
tf
Turn-Off Fall Time
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
N Channel - Q1
20
20
V
= 4.0V
GS
V
= 10V
GS
V
= 5.0V
V
= 3.5V
DS
GS
V
= 5.0V
GS
V
= 3.0V
GS
16
12
8
V
= 4.5V
GS
15
V
= 2.5V
GS
10
V
= 2.0V
GS
5
0
T
= 150°C
A
4
0
T
= 85°C
A
T
= 125°C
A
T
= 25°C
A
T
= -55°C
A
0
0.5
1.0
1.5
2.0
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
Fig. 2 Typical Transfer Characteristics
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DMG6601LVT
Document number: DS35405 Rev. 4 - 2
DMG6601LVT
0.08
0.07
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.06
0.05
0.04
0.03
0.02
V
= 2.5V
V
GS
= 4.5V
GS
V
= 10V
GS
I
= 2A
D
0.01
0
0.01
0
2
3
4
5
6
7
8
9
10
0
5
10
15
20
ID, DRAIN-SOURCE CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Fig. 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
1.8
1.6
0.10
0.09
0.08
V
= 4.5V
V
= 10V
GS
GS
I
= 10A
D
T
= 150°C
= 125°C
A
0.07
0.06
0.05
0.04
0.03
0.02
1.4
1.2
1.0
V
= 4.5V
GS
T
A
I
= 5A
D
T
= 85°C
= 25°C
A
T
A
T
= -55°C
A
0.8
0.6
0.01
0
0
2
4
6
8
10 12 14 16 18 20
ID, DRAIN CURRENT (A)
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
C)
Fig. 5 Typical On-Resistance vs.
Drain Current and Temperature
0.10
0.09
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.08
0.07
0.06
0.05
0.04
I
= 1mA
D
V
= 4.5V
= 5A
GS
I
I
= 250µA
D
D
V
= 10V
GS
0.03
0.02
I
= 10A
D
0.01
0
-50 -25
0
25
50
75 100 125 150
C)
Fig. 7 On-Resistance Variation with Temperature
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (
C)
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DMG6601LVT
Document number: DS35405 Rev. 4 - 2
DMG6601LVT
1,000
100
10
20
18
16
14
12
10
8
C
iss
T
= 150°C
A
T
= 125°C
A
C
oss
6
T
= 85°C
A
C
rss
4
T
= 25°C
f = 1MHz
A
2
0
T
= -55°C
A
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
Fig. 9 Diode Forward Voltage vs. Current
10
8
V
I
= 15V
DS
= 3.1A
D
6
4
2
0
0
2
4
6
8
10
12
14
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate Charge
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
RJA(t) = r(t) * R
JA
RJA = 143°C/W
D = Single Pulse
Duty Cycle, D = t1/ t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (sec)
Fig. 12 Transient Thermal Resistance
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DMG6601LVT
Document number: DS35405 Rev. 4 - 2
DMG6601LVT
P Channel - Q2
10
8
10
V
= -10V
GS
V
= -5.0V
V
= -5.0V
GS
DS
V
= -4.0V
GS
8
6
4
V
= -4.5V
GS
V
= -3.5V
GS
V
= -3.0V
GS
6
4
V
= -2.5V
GS
V
= -2.0V
GS
2
0
2
0
T
= 150C
A
T
A
= 85C
A
T
= 125C
A
T
= 25C
T
= -55C
A
0
1
2
3
4
0
0.5
1.0
1.5
2.0
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 14 Typical Transfer Characteristics
-VDS, DRAIN -SOURCE VOLTAGE (V)
Fig. 13 Typical Output Characteristics
0.16
0.12
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
V
= -2.5V
GS
0.08
V
= -4.5V
= -10V
GS
I
= -2A
D
V
GS
0.04
0
0.02
0
0
2
4
6
8
10
2
3
4
5
6
7
8
9
10
-VGS, GATE-SOURCE VOLTAGE (V)
-ID, DRAIN SOURCE CURRENT (A)
Fig. 16 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
Fig. 15 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.8
1.6
0.20
0.16
V
= -4.5V
GS
V
I
= -10V
GS
= -10A
D
T
= 150C
A
1.4
T
= 125C
0.12
0.08
A
V
I
= -4.5V
GS
T
= 85C
A
A
1.2
1.0
= -5A
D
T
= 25C
T
= -55C
A
0.04
0
0.8
0.6
0
2
4
6
8
10
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 18 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-ID, DRAIN SOURCE CURRENT (A)
C)
Fig. 17 Typical On-Resistance vs.
Drain Current and Temperature
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DMG6601LVT
Document number: DS35405 Rev. 4 - 2
DMG6601LVT
0.16
0.12
1.6
1.4
V
I
= -4.5V
GS
= -5A
1.2
1.0
0.8
0.6
0.4
D
-I = 1mA
D
V
I
= -10V
GS
0.08
= -10A
D
-I = 250µA
D
0.04
0
0.2
0
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 19 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
C)
TA, AMBIENT TEMPERATURE (°C)
Fig. 20 Gate Threshold Variation vs. Ambient Temperature
1,000
10
f = 1MHz
C
iss
8
6
4
100
C
oss
T = 150C
A
C
rss
T = 85C
A
T = 125C
A
2
0
T = 25C
A
T = -55C
A
10
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
-VDS, DRAIN-SOURCE VOLTAGE (V)
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 22 Typical Junction Capacitance
Fig. 21 Diode Forward Voltage vs. Current
10
8
V
I
= -15V
DS
6
= -2.3A
D
4
2
0
0
2
4
6
8
10
12
14
Qg, TOTAL GATE CHARGE (nC)
Fig. 23 Gate-Charge Characteristics
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DMG6601LVT
Document number: DS35405 Rev. 4 - 2
DMG6601LVT
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
RJA(t) = r(t) * R
RJA = 143°C/W
JA
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10 100
1,000
t1, PULSE DURATION TIMES (sec)
Fig. 24 Transient Thermal Resistance
Package Outline Dimensions
D
TSOT26
Dim Min Max Typ
e1
A
1.00
0.01 0.10
0.84 0.90
2.90
2.80
1.60
A1
A2
D
E
E1
b
E
E1
L2
c
0.30 0.45
c
e
e1
L
0.12 0.20
0.95
1.90
L
4x
1
e
6x b
0.30 0.50
L2
θ
θ1
0.25
4°
0°
4°
8°
12°
A2
A1
A
All Dimensions in mm
Suggested Pad Layout
C
C
Value
(in mm)
0.950
Dimensions
C
X
Y1
0.700
Y
1.000
Y1
3.199
Y (6x)
X (6x)
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DMG6601LVT
Document number: DS35405 Rev. 4 - 2
DMG6601LVT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
9 of 9
www.diodes.com
August 2013
© Diodes Incorporated
DMG6601LVT
Document number: DS35405 Rev. 4 - 2
DMG6601LVT-7 CAD模型
引脚图
封装焊盘图
DMG6601LVT-7 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| DMG6602SVT | DIODES | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | 获取价格 |
|
| DMG6602SVT-7 | DIODES | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | 获取价格 |
|
| DMG6602SVTQ-13 | DIODES | Small Signal Field-Effect Transistor | 获取价格 |
|
| DMG6602SVTQ-7 | DIODES | Small Signal Field-Effect Transistor, | 获取价格 |
|
| DMG6898LSD | DIODES | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | 获取价格 |
|
| DMG6898LSD-13 | DIODES | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | 获取价格 |
|
| DMG6968U | DIODES | N-CHANNEL ENHANCEMENT MODE MOSFET | 获取价格 |
|
| DMG6968U | TYSEMI | N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance | 获取价格 |
|
| DMG6968U-7 | DIODES | N-CHANNEL ENHANCEMENT MODE MOSFET | 获取价格 |
|
| DMG6968U-7 | TYSEMI | N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance | 获取价格 |
|
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