DMG7408SFG_17 [DIODES]
30V N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMG7408SFG_17 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：422K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NOT RECOMMENDED FOR NEW DESIGN
USE DMN3025SFV
DMG7408SFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI3333-8
Product Summary
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test in Production
ID Max
BVDSS
RDS(ON) Max
Low RDS(ON) – Ensures On State Losses Are Minimized
TA = +25°C
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
23mΩ @ VGS = 10V
33mΩ @ VGS = 4.5V
7.0A
6.0A
30V
Occupies Just 33% of The Board Area Occupied by SO-8
Enabling Smaller End Product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
®
Case: PowerDI 3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Backlighting
Power Management Functions
DC-DC Converters
Weight: 0.008 grams (Approximate)
PowerDI3333-8
Pin 1
S
S
8
7
6
5
1
2
3
4
S
G
D
D
D
D
Top View
Internal Schematic
Top View
Bottom View
Ordering Information (Note 4)
Part Number
DMG7408SFG-7
DMG7408SFG-13
Case
PowerDI3333-8
PowerDI3333-8
Packaging
2000/Tape & Reel
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
N34 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 17 = 2017)
G78 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 17 = 2017)
WW = Week Code (01 to 53)
WW = Week Code (01 to 53)
G78
N34
PowerDI is a registered trademark of Diodes Incorporated.
1 of 6
www.diodes.com
December 2017
© Diodes Incorporated
DMG7408SFG
Document number: DS35620 Rev. 6 - 3
NOT RECOMMENDED FOR NEW DESIGN
USE DMN3025SFV
DMG7408SFG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
Value
30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
±20
V
VGSS
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
7.0
5.5
A
A
A
A
ID
ID
ID
ID
Continuous Drain Current (Note 5) VGS = 10V
9.5
7.5
t<10s
Steady
State
6.0
5.7
Continuous Drain Current (Note 5) VGS = 4.5V
8.0
6.3
t<10s
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
66
3.0
9
A
A
IDM
IS
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 7)
A
IAS
EAS
Avalanche Energy (Note 7)
12
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Value
1
Unit
W
Total Power Dissipation (Note 6)
Steady State
131
72
2.1
63
35
7.1
°C/W
°C/W
W
°C/W
°C/W
°C/W
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 5)
R
JA
t<10s
PD
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
R
JA
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
R
JC
-55 to +150
°C
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
-
-
-
-
-
1
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
μA
nA
-
±100
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1.0
-
1.45
2.4
V
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 10A
VGS = 4.5V, ID = 7.5A
VDS = 5V, ID = 10A
VGS = 0V, IS = 1A
15
25
23
33
Static Drain-Source On-Resistance
mΩ
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
-
-
11
-
S
V
|Yfs|
VSD
0.72
1
-
478.9
96.7
61.4
1.1
-
-
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
-
Reverse Transfer Capacitance
Gate Resistance
-
-
0.4
1.6
8
17
-
VDS = 0V, VGS = 0V, f = 1MHz
-
-
-
-
-
-
-
-
5.0
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
nC
10.5
1.8
Qg
VDS = 15V,ID = 10A
nC
nC
ns
ns
ns
ns
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
1.6
-
Turn-On Delay Time
2.9
-
Turn-On Rise Time
7.9
-
VGS = 10V, VDS = 15V,
RG = 3Ω, RL = 1.5Ω
Turn-Off Delay Time
14.6
3.1
-
tD(OFF)
tF
Turn-Off Fall Time
-
Notes:
5. RJA is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. UIS in production with L = 0.3mH, TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 6
www.diodes.com
December 2017
© Diodes Incorporated
DMG7408SFG
Document number: DS35620 Rev. 6 - 3
NOT RECOMMENDED FOR NEW DESIGN
USE DMN3025SFV
DMG7408SFG
20
30
25
20
V
= 10V
GS
V
= 5V
DS
V
= 4.5V
GS
15
10
V
= 4.0V
GS
V
= 3.5V
15
GS
V
= 150°C
GS
V
= 125°C
GS
10
5
V
= 85°C
GS
5
0
V
= 3.0V
V
= 25°C
GS
GS
V
= 2.5V
GS
V
= -55°C
GS
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.5
1
1.5
2
2.5
3
3.5
4
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
Fig. 1 Typical Output Characteristic
0.04
0.03
0.05
0.04
V
= 10V
GS
T
= 150°C
= 125°C
A
V
= 3.5V
GS
T
A
0.03
0.02
T
= 85°C
A
0.02
V
= 4.5V
GS
T
= 25°C
A
V
= 10V
GS
T
= -55°C
A
0.01
0
0.01
0
0
5
10
15
20
25
30
0
5
10
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
15
20
25
30
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.7
1.5
0.06
0.05
0.04
V
= 4.5V
= 5A
GS
I
D
V
= 10V
GS
1.3
1.1
I
= 10A
D
V
= 4.5V
= 5A
GS
I
D
0.03
0.02
0.9
V
= 10V
GS
= 10A
I
D
0.01
0
0.7
0.5
-50 -25
TA, AMBIENT TEMPERATURE
Fig. 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
(°C)
TA, AMBIENT TEMPERATURE
(°C)
Fig. 5 On-Resistance Variation with Temperature
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December 2017
© Diodes Incorporated
DMG7408SFG
Document number: DS35620 Rev. 6 - 3
NOT RECOMMENDED FOR NEW DESIGN
USE DMN3025SFV
DMG7408SFG
2.0
1.8
20
18
)
(
16
1.6
1.4
1.2
1.0
14
12
10
8
T
= 25°C
A
I
= 1mA
D
I
= 250µA
D
6
,
4
0.8
0.6
2
0
-50 -25
0
25
50
75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
TA, AMBIENT TEMPERATURE (°C)
Fig. 8 Diode Forward Voltage vs. Current
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
10
8
1,000
f = 1MHz
C
iss
V
= 15V
DS
= 10A
6
I
D
100
C
oss
4
2
0
C
rss
10
0
5
10
15
20
25
30
0
2
4
6
8
10
Qg, TOTAL GATE CHARGE (nC)
Fig. 10 Gate-Charge Characteristics
12
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
R
(t) = r(t) * R
JA
JA
R
=
90°C/W
JA
0.01
P(pk)
D = 0.01
t
1
t
2
D = 0.005
T
- T = P * R (t)
J
A
JA
Duty Cycle, D = t /t
1
2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
4 of 6
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December 2017
© Diodes Incorporated
DMG7408SFG
Document number: DS35620 Rev. 6 - 3
NOT RECOMMENDED FOR NEW DESIGN
USE DMN3025SFV
DMG7408SFG
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI3333-8
A3
A1
A
PowerDI3333-8
Dim Min Max Typ
0.75 0.85 0.80
A1 0.00 0.05 0.02
Seating Plane
A
D
A3
b
0.203
0.27 0.37 0.32
L( 4x)
E4
D2
b2 0.15 0.25 0.20
3.25 3.35 3.30
D2 2.22 2.32 2.27
3.25 3.35 3.30
1
D
Pin #1 ID
E
b2( 4x)
E2 1.56 1.66 1.61
E3 0.79 0.89 0.84
E4 1.60 1.70 1.65
E
E3
E2
e
L
0.65
0.35 0.45 0.40
L1
z
0.39
0.515
L1( 3x)
8
All Dimensions in mm
z( 4x)
b
e
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI3333-8
X3
X2
8
Y4
Dimensions Value (in mm)
C
X
0.650
0.420
0.420
0.230
2.370
0.700
1.850
2.250
3.700
0.540
X1
Y1
Y2
X1
X2
X3
Y
Y1
Y2
Y3
Y4
Y3
Y
1
X
C
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December 2017
© Diodes Incorporated
DMG7408SFG
Document number: DS35620 Rev. 6 - 3
NOT RECOMMENDED FOR NEW DESIGN
USE DMN3025SFV
DMG7408SFG
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
www.diodes.com
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December 2017
© Diodes Incorporated
DMG7408SFG
Document number: DS35620 Rev. 6 - 3
相关型号：
DMG7430LFG
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
DIODES
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