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DMMT3906W_1 [DIODES]

MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR; MATCHED PNP小信号表面贴装晶体管
DMMT3906W_1
型号： DMMT3906W_1
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MATCHED PNP小信号表面贴装晶体管

晶体 晶体管
文件： 总4页 (文件大小：157K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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SPICE MODEL: DMMT3906W  
Pb  
DMMT3906W  
Lead-free  
MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
·
·
·
·
·
·
Epitaxial Planar Die Construction  
Intrinsically Matched PNP Pair (Note 1)  
Small Surface Mount Package  
SOT-363  
Min  
A
2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)  
Lead Free/RoHS Compliant (Note 2)  
Dim  
A
Max  
0.30  
1.35  
2.20  
C2  
E2  
E1  
0.10  
Qualified to AEC-Q101 Standards for High Reliability  
B
1.15  
C
B
C
2.00  
B2  
B1  
C1  
Mechanical Data  
D
0.65 Nominal  
G
H
·
Case: SOT-363  
F
0.30  
1.80  
¾
0.40  
2.20  
0.10  
1.00  
0.40  
0.25  
·
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
H
K
M
J
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
K
0.90  
0.25  
0.10  
Terminals: Solderable per MIL-STD-202, Method 208  
J
L
D
F
L
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
M
·
·
·
·
Terminal Connections: See Diagram  
Marking (See Below): K4B  
a
8°  
All Dimensions in mm  
Ordering & Date Code Information: See Below  
Weight: 0.015 grams (approximate)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
V
Collector-Base Voltage  
-40  
-40  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
-5.0  
V
Collector Current - Continuous  
Power Dissipation (Note 3)  
-200  
mA  
mW  
°C/W  
°C  
Pd  
200  
R
qJA  
Thermal Resistance, Junction to Ambient (Note 3)  
Operating and Storage Temperature Range  
625  
Tj, TSTG  
-55 to +150  
(Note 4)  
Ordering Information  
Device  
Packaging  
Shipping  
DMMT3906W-7-F  
SOT-363  
3000/Tape & Reel  
Notes:  
1. Built with adjacent die from a single wafer.  
2. No purposefully added lead.  
3. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which  
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
K4B = Product Type Marking Code  
YM = Date Code Marking  
K4B  
Y = Year ex: T = 2006  
M = Month ex: 9 = September  
Date Code Key  
Year  
2002  
2003  
2004  
2005  
2006  
2007  
2008  
2009  
2010  
2011  
2012  
Code  
N
P
R
S
T
U
V
W
X
Y
Z
Month  
Code  
Jan  
Feb  
Mar  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
DS30312 Rev. 9 - 2  
1 of 4  
www.diodes.com  
DMMT3906W  
ã Diodes Incorporated  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
OFF CHARACTERISTICS (Note 5)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICEX  
IC = -10mA, IE = 0  
-40  
-40  
-5.0  
¾
¾
¾
V
V
IC = -1.0mA, IB = 0  
IE = -10mA, IC = 0  
¾
V
VCE = -30V, VEB(OFF) = -3.0V  
VCE = -30V, VEB(OFF) = -3.0V  
-50  
-50  
nA  
nA  
IBL  
Base Cutoff Current  
¾
ON CHARACTERISTICS (Note 5)  
IC = -100µA, VCE = -1.0V  
IC = -1.0mA, VCE = -1.0V  
60  
80  
¾
¾
IC  
IC  
=
=
-10mA, VCE = -1.0V  
-50mA, VCE = -1.0V  
hFE  
DC Current Gain (Note 6)  
100  
60  
300  
¾
¾
IC = -100mA, VCE = -1.0V  
30  
¾
IC = -10mA, IB = -1.0mA  
IC = -50mA, IB = -5.0mA  
-0.25  
-0.40  
VCE(SAT)  
Collector-Emitter Saturation Voltage (Note 6)  
Base-Emitter Saturation Voltage (Note 6)  
¾
V
IC = -10mA, IB = -1.0mA  
IC = -50mA, IB = -5.0mA  
-0.65  
¾
-0.85  
-0.95  
VBE(SAT)  
V
VCE = -5V, IC = -2mA  
DVBE  
Base-Emitter Voltage Matching  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
¾
-1  
mV  
VCB = -5.0V, f = 1.0MHz, IE = 0  
VEB = -0.5V, f = 1.0MHz, IC = 0  
Cobo  
Cibo  
hie  
¾
¾
4.5  
10  
pF  
pF  
Input Capacitance  
Input Impedance  
2.0  
0.1  
100  
3.0  
12  
kW  
x 10-4  
hre  
Voltage Feedback Ratio  
Small Signal Current Gain  
Output Admittance  
10  
VCE = 10V, IC = 1.0mA,  
f = 1.0kHz  
hfe  
400  
60  
¾
hoe  
mS  
VCE = -20V, IC = -10mA,  
f = 100MHz  
fT  
Current Gain-Bandwidth Product  
Noise Figure  
250  
¾
MHz  
dB  
VCE = -5.0V, IC = -100mA,  
RS = 1.0kW, f = 1.0kHz  
NF  
¾
4.0  
SWITCHING CHARACTERISTICS  
Delay Time  
td  
tr  
¾
¾
¾
¾
35  
35  
ns  
ns  
ns  
ns  
VCC = -3.0V, IC = -10mA,  
VBE(off) = 0.5V, IB1 = -1.0mA  
Rise Time  
ts  
tf  
Storage Time  
225  
75  
VCC = -3.0V, IC = -10mA,  
IB1 = IB2 = -1.0mA  
Fall Time  
Notes: 5. Short duration pulse test used to minimize self-heating effect.  
6. The DC current gain, h , (matched at I = -10mA and V = -1.0V) Collector-Emitter Saturation Voltage, V  
, and  
FE  
C
CE  
CE (sat)  
Base-Emitter Saturation Voltage, V  
are matched with typical matched tolerances of 1% and maximum of 2%.  
BE(sat)  
DS30312 Rev. 9 - 2  
2 of 4  
DMMT3906W  
www.diodes.com  
100  
200  
Note 3  
f = 1MHz  
150  
100  
10  
Cibo  
50  
Cobo  
1
0
0
175  
1
25  
50  
150  
200  
0.1  
100  
75  
100 125  
10  
V
CB  
, COLLECTOR-BASE VOLTAGE (V)  
T , AMBIENT TEMPERATURE (°C)  
A
Fig. 2, Input and Output Capacitance vs.  
Collector-Base Voltage  
Fig. 1, Max Power Dissipation vs  
Ambient Temperature  
1000  
10  
IC  
= 10  
IB  
T
A
= 125°C  
1
100  
10  
1
T
A
= +25°C  
T
A
= -25°C  
0.1  
VCE = 1.0V  
0.01  
10  
I , COLLECTOR CURRENT (mA)  
1
100  
1000  
1
10  
100  
1000  
0.1  
I , COLLECTOR CURRENT (mA)  
C
C
Fig. 3, Typical DC Current Gain vs  
Collector Current  
Fig. 4, Typical Collector-Emitter Saturation Voltage  
vs. Collector Current  
1.0  
0.9  
0.8  
0.7  
0.6  
I
C
= 10  
I
B
0.5  
1
10  
100  
I , COLLECTOR CURRENT (mA)  
C
Fig. 5, Typical Base-Emitter  
Saturation Voltage vs. Collector Current  
DS30312 Rev. 9 - 2  
3 of 4  
DMMT3906W  
www.diodes.com  
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further  
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither  
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will  
agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the  
President of Diodes Incorporated.  
DS30312 Rev. 9 - 2  
4 of 4  
DMMT3906W  
www.diodes.com  
ã Diodes Incorporated  

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