DMN10H099SFG-7 [DIODES]
Qualified to AEC-Q101 Standards for High Reliability;
| 型号： | DMN10H099SFG-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Qualified to AEC-Q101 Standards for High Reliability |
| 文件： | 总6页 (文件大小：265K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN10H099SFG
100V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
Features and Benefits
Low RDS(ON) – ensures on state losses are minimized
I
D max
V(BR)DSS
RDS(ON) max
Small form factor thermally efficient package enables higher
density end products
TA = +25°C
80mΩ @ VGS = 10V
99mΩ @ VGS = 6.0V
4.2A
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
100V
3.6A
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case: POWERDI3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Applications
Power Management Functions
DC-DC Converters
Weight: 0.034 grams (approximate)
POWERDI3333-8
Pin 1
8
7
6
5
1
2
3
4
S
S
S
G
D
D
D
Top View
Internal Schematic
D
Top View
Bottom View
Ordering Information (Note 4)
Part Number
DMN10H099SFG-7
DMN10H099SFG-13
Compliance
Standard
Standard
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2000/Tape & Reel
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
N12 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 13 = 2013)
WW = Week code (01 ~ 53)
N12
POWERDI is a registered trademark of Diodes Incorporated
1 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMN10H1099SFG
Document number: DS36371 Rev. 2 - 2
DMN10H099SFG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
100
±20
Units
V
V
Gate-Source Voltage
VGSS
TA = +25°C
TA = +70°C
TA = +25°C
Steady
State
4.2
3.3
A
A
A
ID
ID
ID
Continuous Drain Current (Note 6) VGS = 10V
5.8
4.5
t<10s
T
A = +70°C
A = +25°C
T
Steady
State
3.6
2.9
TA = +70°C
TA = +25°C
Continuous Drain Current (Note 6) VGS = 6V
5.2
4.1
t<10s
A
A
ID
TA = +70°C
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
20
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Value
Units
0.98
0.57
131
TA = +25°C
Total Power Dissipation (Note 5)
W
TA = +70°C
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
R
JA
76
2.31
1.18
55
28
6.9
TA = +25°C
TA = +70°C
Steady state
t<10s
PD
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
RθJC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
100
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 80V, VGS = 0V
VGS = ±20V, VDS = 0V
Zero Gate Voltage Drain Current
Gate-Source Leakage
-
-
1.0
μA
nA
±100
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1.5
2.0
54
3.0
80
99
-
V
VGS(th)
VDS = VGS, ID = 250μA
-
-
-
-
V
V
GS = 10V, ID = 3.3A
GS = 6.0V, ID = 3.0A
Static Drain-Source On-Resistance
mΩ
RDS (ON)
58
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
13
S
V
|Yfs|
VSD
VDS = 10V, ID = 3.3A
VGS = 0V, IS = 3.2A
0.77
-
-
-
-
-
-
-
-
-
-
-
-
-
1172
40.8
31.3
1.6
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = 50V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1.0MHz
25.2
12.2
5.3
nC
nC
nC
nC
ns
ns
ns
ns
Total Gate Charge VGS = 10V
Total Gate Charge VGS = 4.5V
Gate-Source Charge
Qg
Qg
V
DS = 50V, ID = 3.3A
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
5.9
Turn-On Delay Time
5.4
Turn-On Rise Time
5.9
VGS = 10V, VDS = 50V,
RG = 6.0ꢀ, ID = 3.3A
Turn-Off Delay Time
20.0
7.3
tD(off)
tf
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated
2 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMN10H1099SFG
Document number: DS36371 Rev. 2 - 2
DMN10H099SFG
10
9
20.0
16.0
V
= 10V
DS
V
= 10V
GS
8
7
6
5
4
3
2
V
= 6.0V
GS
V
= 5.0V
GS
12.0
8.0
4.0
0.0
V
= 4.5V
GS
T
A
= 150°C
A
T
= 125°C
T
= 25°C
T
= 85°C
A
A
V
= 4.0V
GS
T
= -55°C
A
1
0
V
= 3.5V
GS
1
2
3
4
5
0
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.1
0.08
0.06
0.04
0.5
0.4
I
= 3.3A
V
= 6.0V
D
GS
0.3
0.2
0.1
0
V
= 10V
GS
0.02
0
I
= 3.0A
D
2
4
6
8
10 12 14 16 18 20
2
4
6
8
10 12 14 16 18 20
0
VGS, GATE-SOURCE VOLTAGE (V)
ID, DRAIN-SOURCE CURRENT (A)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.16
3
V
= 10V
GS
0.14
0.12
0.10
0.08
0.06
T
= 150°C
A
2.5
2
V
I
= 10V
GS
= 5.0A
D
T
= 125°C
= 85°C
A
T
1.5
1
A
V
I
= 5V
GS
= 1.0A
D
T
= 25°C
A
0.04
0.5
0
T
= -55°C
A
0.02
0.00
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
0
1
2
3
4
5
6
7
8
9
10
C)
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
POWERDI is a registered trademark of Diodes Incorporated
3 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMN10H1099SFG
Document number: DS36371 Rev. 2 - 2
DMN10H099SFG
0.15
0.12
0.09
0.06
0.03
0
2.5
2.2
1.9
1.6
1.3
1
V
I
= 5V
GS
I = 1mA
D
= 1.0A
D
V
= 10V
= 5A
GS
I
D
I = 250µA
D
-50 -25
0
25
50
75 100 125 150
C)
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 7 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
10
9
8
7
6
5
4
3
2
1
0
C
iss
T
A
= 150°C
A
1000
100
T
= 25°C
A
T
= 125°C
T
= 85°C
A
T
= -55°C
A
C
oss
C
rss
f = 1MHz
10
0
5
10 15 20 25 30 35 40 45 50
VDS, DRAIN-SOURCE VOLTAGE (V)
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
Figure 10 Typical Junction Capacitance
10
8
100
10
R
DS(on)
V
= 50V
Limited
DS
I
= 3.3A
D
P
= 100µs
W
DC
P
6
4
1
= 10s
W
P
= 1s
W
P
= 100ms
W
0.1
P
= 20ms
W
P
= 20ms
W
P
= 10ms
W
P
= 1ms
W
0.01
0.001
2
0
TJ(max) = 150°C
TA = 25°C
Single Pulse
DUT on 1 * MRP Board
0
5
10
15
20
25
0.1
1
10
100
1000
Qg, TOTAL GATE CHARGE (nC)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 Gate Charge
Figure 12 SOA, Safe Operation Area
POWERDI is a registered trademark of Diodes Incorporated
4 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMN10H1099SFG
Document number: DS36371 Rev. 2 - 2
DMN10H099SFG
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
RJA(t) = r(t) * R
JA
RJA = 72°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIMES (sec)
Figure 13 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
POWERDI3333-8
Dim Min Max Typ
3.25 3.35 3.30
3.25 3.35 3.30
D2 2.22 2.32 2.27
E2 1.56 1.66 1.61
A
A3
D
E
A1
D
D2
A
A1
A3
b
b2
L
L1
e
Z
0.75 0.85 0.80
L
(4x)
0
0.05 0.02
0.203
1
8
4
5
Pin 1 ID
E2
0.27 0.37 0.32
0.20
0.35 0.45 0.40
b2
(4x)
E
0.39
0.65
0.515
L1
(3x)
All Dimensions in mm
Z (4x)
e
b (8x)
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Dimensions
Value (in mm)
0.650
G
C
G
0.230
G1
Y
Y1
Y2
Y3
X
0.420
3.700
2.250
1.850
0.700
2.370
0.420
8
5
4
Y2
Y3
G1
Y1
Y
1
X2
X2
C
POWERDI is a registered trademark of Diodes Incorporated
5 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMN10H1099SFG
Document number: DS36371 Rev. 2 - 2
DMN10H099SFG
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
POWERDI is a registered trademark of Diodes Incorporated
6 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMN10H1099SFG
Document number: DS36371 Rev. 2 - 2
相关型号：
DMN10H099SK3-13
Power Field-Effect Transistor, 17A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2
DIODES
©2020 ICPDF网 联系我们和版权申明