DMN10H170SVTQ [DIODES]
100V N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMN10H170SVTQ |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总8页 (文件大小：504K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN10H170SVTQ
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
ID Max
TA = +25°C
Low Gate Threshold Voltage
BVDSS
RDS(ON) Max
Low Input Capacitance
160mΩ @ VGS = 10V
200mΩ @ VGS = 4.5V
2.6A
2.3A
Fast Switching Speed
100V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Mechanical Data
Applications
Case: TSOT26
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.015 grams (Approximate)
TSOT26
D
D
1
2
3
6
D
D
S
D
G
5
4
G
S
Top View
Pin-Out
Top View
Equivalent Circuit
Ordering Information (Note 5)
Part Number
Case
Packaging
DMN10H170SVTQ-7
DMN10H170SVTQ-13
TSOT26
TSOT26
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
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© Diodes Incorporated
DMN10H170SVTQ
Document number: DS38276 Rev. 2 - 2
DMN10H170SVTQ
Marking Information
TSOT26
11N = Product Type Marking Code
YM = Date Code Marking
Y or ꢀ = Year (ex: C = 2015)
M = Month (ex: 9 = September)
11N
Date Code Key
Year
2014
2015
2016
2017
2018
2019
2020
2021
Code
B
C
D
E
F
G
H
I
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
Unit
V
100
±20
Gate-Source Voltage
V
VGSS
Steady
State
TA = +25°C
TA = +70°C
2.6
2.1
A
Continuous Drain Current (Note 7), VGS = 10V
ID
11.2
2.0
A
A
Pulsed Drain Current (10μs Pulse, Duty Cycle ≦1%)
IDM
IS
Maximum Body Diode Continuous Current (Note 7)
Thermal Characteristics
Characteristic
Symbol
Value
1.2
Unit
(Note 6)
(Note 7)
(Note 6)
(Note 7)
(Note 7)
Total Power Dissipation
W
PD
1.7
101
73
Thermal Resistance, Junction to Ambient
RθJA
°C/W
°C
Thermal Resistance, Junction to Case
15
RθJC
Operating and Storage Temperature Range
-55 to +150
TJ, TSTG
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
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DMN10H170SVTQ
Document number: DS38276 Rev. 2 - 2
DMN10H170SVTQ
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
100
V
BVDSS
IDSS
1.0
VGS = 0V, ID = 250µA
µA
nA
VDS = 100V, VGS = 0V
VGS = ±20V, VDS = 0V
±100
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1.0
2.0
115
124
0.9
3.0
160
200
1.0
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250µA
VGS = 10V, ID = 5.0A
VGS = 4.5V, ID = 5.0A
VGS = 0V, IS = 10A
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
1,167
36
Ciss
Coss
Crss
Rg
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
25
Reverse Transfer Capacitance
Gate Resistance
1.3
4.9
9.7
2.0
2.0
10
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = 80V, ID = 12.8A
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
Qg
nC
ns
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
Turn-On Delay Time
11
Turn-On Rise Time
VDD = 50V, VGS = 10V,
42
Rg = 25Ω, ID = 12.8A
Turn-Off Delay Time
tD(OFF)
12
30
35
Turn-Off Fall Time
tF
Reverse Recovery Time
Reverse Recovery Charge
ns
tRR
VGS = 0V, IS=12.8A, di/dt=100A/µs
nC
QRR
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMN10H170SVTQ
Document number: DS38276 Rev. 2 - 2
DMN10H170SVTQ
10.0
8.0
6.0
4.0
2.0
0.0
10
8
VGS = 10.0V
VGS = 4.5V
VDS = 5V
VGS = 4.0V
VGS = 3.5V
6
VGS = 3.2V
VGS = 3.0V
125℃
85℃
4
150℃
2
25℃
-55℃
0
0
0.5
1
1.5
2
1.5
2
2.5
3
3.5
4
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
0.3
0.26
0.22
0.18
0.14
0.1
0.14
0.13
0.12
0.11
0.1
VGS = 10V
150℃
125℃
85℃
VGS = 4.5V
0.09
0.08
0.07
VGS = 10V
25℃
0.06
0.02
-55℃
0
2
4
6
8
10
1
2
3
4
5
6
7
8
9
10
ID, DRAIN CURRENT (A)
ID, DRAIN-SOURCE CURRENT (A)
Figure 4. Typical On-Resistance vs. Drain Current and
Junction Temperature
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.3
0.25
0.2
2.4
2.2
2
VGS = 10V, ID = 5A
1.8
1.6
1.4
1.2
1
VGS = 4.5V, ID = 5A
0.15
0.1
VGS = 4.5V, ID = 5A
VGS = 10V, ID = 5A
0.8
0.6
0.4
0.05
0
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
TJ, JUNCTION TEMPERATURE (℃)
Figure 5. On-Resistance Variation with Junction
Temperature
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DMN10H170SVTQ
Document number: DS38276 Rev. 2 - 2
DMN10H170SVTQ
2.4
2.2
2
10
8
VGS = 0V
ID = 1mA
6
1.8
1.6
1.4
1.2
1
ID = 250μA
TJ = 85oC
TJ = 25oC
4
TJ = 125oC
TJ = 150oC
2
TJ = -55oC
0
0
0.3
0.6
0.9
1.2
1.5
-50
-25
0
25
50
75
100 125 150
VSD, SOURCE-DRAIN VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Diode Forward Voltage vs. Current
Figure 7. Gate Threshold Variation vs. Junction
Temperature
10
9
8
7
6
5
4
3
2
10000
1000
100
f=1MHz
V
I
= 80V
DS
= 12.8A
D
Ciss
Coss
1
0
Crss
10
0
2
4
6
8
10
0
10 20 30 40 50 60 70 80 90 100
VDS, DRAIN-SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
Figure 9. Typical Junction Capacitance
100
R
DS(on)
Limited
10
1
DC
P
= 10s
W
P
= 1s
W
P
0.1
0.01
= 100ms
W
TJ(max) = 150°C
TA = 25°C
P
= 10ms
W
P
= 1ms
W
VGS = 10V
Single Pulse
P
= 100µs
W
DUT on 1 * MRP Board
0.001
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
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DMN10H170SVTQ
Document number: DS38276 Rev. 2 - 2
DMN10H170SVTQ
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Rthja(t) = r(t) * Rthja
Rthja = 101°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.001
0.01
0.1
1
10
100
1000
0.0001
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
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DMN10H170SVTQ
Document number: DS38276 Rev. 2 - 2
DMN10H170SVTQ
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
TSOT26
D
e1
01( 4x)
TSOT26
E1/2
Dim
A
Min
Max
Typ
E/2
1.00
A1
A2
D
0.010 0.100
0.840 0.900
c
E1
E
Gauge Plane
Seating Plane
2.800 3.000 2.900
E
E1
b
2.800 BSC
1.500 1.700 1.600
0.300 0.450
0.120 0.200
0
L
L2
c
01( 4x)
e
0.950 BSC
e
b
e1
L
1.900 BSC
0.50
A2
0.30
A1
L2
θ
θ1
0.250 BSC
8°
A
0°
4°
4°
12°
Seating Plane
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
TSOT26
C
Dimensions Value (in mm)
C
X
Y
0.950
0.700
1.000
3.199
Y1
Y1
Y
X
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DMN10H170SVTQ
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DMN10H170SVTQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
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