DMN10H220LE-13 [DIODES]
Low On-Resistance;
| 型号： | DMN10H220LE-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Low On-Resistance |
| 文件： | 总7页 (文件大小：500K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN10H220LE
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
ID
TA = +25°C
2.3A
Low On-Resistance
V(BR)DSS
RDS(on) max
Low Input Capacitance
220mΩ @ VGS = 10V
250mΩ @ VGS = 4.5V
Fast Switching Speed
100V
2.1A
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Mechanical Data
Case: SOT223
Applications
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram Below
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
DC-DC Converters
Power Management Functions
D
SOT223
G
S
Pin Out - Top View
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN10H220LE-13
Compliance
Standard
Case
SOT223
Packaging
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
= Manufacturer’s Marking
10H220 = Marking Code
YWW = Date Code Marking
Y or Y= Year (ex: 3 = 2013)
WW = Week (01 - 53)
YWW
10H220
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© Diodes Incorporated
DMN10H220LE
Document number: DS36475 Rev. 3 - 2
DMN10H220LE
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
100
Units
V
V
Gate-Source Voltage
VGSS
20
TA = +25°C
2.3
1.8
A
A
ID
ID
TA = +70°C
TC = +25°C
TC = +70°C
Continuous Drain Current (Note 5) VGS = 10V
6.2
4.9
Maximum Continuous Body Diode Forward Current (Note 5)
1.5
8
A
A
IS
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
1.8
1.1
Units
TA = +25°C
Total Power Dissipation (Note 5)
TA = +70°C
W
PD
Thermal Resistance, Junction to Ambient (Note 5)
69
°C/W
W
R
JA
Total Power Dissipation (Note 5)
TC = +25°C
14
PD
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
8.7
°C/W
R
JC
-55 to +150
°C
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
100
—
—
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 100V, VGS = 0V
VGS = 16V, VDS = 0V
µA
nA
Gate-Source Leakage
—
±100
IGSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
1
1.7
155
190
0.8
2.5
220
250
1.5
V
mΩ
V
VGS(th)
RDS(ON)
VSD
VDS = VGS, ID = 250µA
VGS = 10V, ID = 1.6A
VGS = 4.5V, ID = 1.3A
VGS = 0V, IS = 1.1A
—
—
—
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
401
22
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Ciss
Coss
Crss
Rg
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistnace
17
2.1
4.1
8.3
1.5
2
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
Qg
nC
ns
VDS = 50V, ID = 1.6A
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
Turn-On Delay Time
6.8
8.2
7.9
3.6
17
Turn-On Rise Time
VDS = 50V, VGS = 4.5V,
Turn-Off Delay Time
RG = 6.8ID = 1.0A
tD(off)
tf
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
ns
trr
IS = 1.1A, di/dt =100A/s
9.8
nC
Qrr
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate.
6 .Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
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© Diodes Incorporated
DMN10H220LE
Document number: DS36475 Rev. 3 - 2
DMN10H220LE
10
9
8
7
6
5
4
3
2
1
0
10
9
8
7
6
5
4
3
2
1
0
V
= 10V
V
= 10V
DS
GS
V
= 8.0V
GS
V
= 5.0V
= 4.5V
GS
V
GS
T
= 150°C
A
V
= 4.0V
GS
T
A
= 125°C
T
= 85°C
A
T
= 25°C
A
V
= 3.5V
GS
T
= -55°C
A
1
2
3
4
5
6
7
8
0
0.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
1
1.5
2
2.5
3
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.4
0.35
0.3
1
I
= 1.3A
D
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
= 1.6A
D
0.25
0.2
V
= 4.5V
GS
V
= 10V
GS
0.15
0.1
0.05
0
0
1
2
3
4
5
6
7
8
9
10
2
4
6
8
10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT (A)
VGS, GATE-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 4 Typical Transfer Characteristic
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0.00
3
V
= 10V
GS
2.5
2
T
= 150°C
A
V
= 10V
= 2A
GS
T
= 125°C
I
A
D
T
= 85°C
A
1.5
1
V
= 4.5V
= 1A
GS
I
D
T
= 25°C
A
T
A
= -55°C
0.5
0
0
1
2
3
4
5
6
7
8
9
10
-50 -25
0
25
50
75 100 125 150
ID, DRAIN CURRENT (A)
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
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© Diodes Incorporated
DMN10H220LE
Document number: DS36475 Rev. 3 - 2
DMN10H220LE
0.5
0.4
0.3
0.2
0.1
0
2.5
2.2
1.9
1.6
1.3
1
V
= 4.5V
= 1A
GS
I
D
I
= 1mA
D
V
= 10V
= 2A
GS
I
D
I
= 250µA
D
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10
9
1000
f = 1MHz
C
iss
8
T
= 150°C
7
A
6
T
= 125°C
A
100
5
T
A
= 25°C
A
T
= 85°C
4
A
3
T
= -55°C
2
C
oss
C
1
rss
0
0
10
0.3
0.6
0.9
1.2
1.5
0
5
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
15
20
25
30
35
40
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
8
10
R
DS(on)
Limited
1
DC
= 10s
6
P
W
V
I
= 50V
P
= 1s
W
DS
= 1.6A
0.1
P
= 100ms
D
W
4
P
= 10ms
W
P
= 1ms
W
0.01
P
= 100µs
TJ(max) = 150°C
TA = 25°C
W
2
VGS = 10V
Single Pulse
DUT on 1 * MRP Board
0.001
0
0.1
1
10
100
1000
0
2
4
6
8
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
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© Diodes Incorporated
DMN10H220LE
Document number: DS36475 Rev. 3 - 2
DMN10H220LE
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
RJA(t) = r(t) * RJA
RJA = 99°C/W
Duty Cycle, D = t1/ t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
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DMN10H220LE
Document number: DS36475 Rev. 3 - 2
DMN10H220LE
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D
Q
b1
C
SOT223
Dim Min Max Typ
1.55 1.65 1.60
A1 0.010 0.15 0.05
A
b
b1
C
D
E
E1
e
e1
L
0.60 0.80 0.70
2.90 3.10 3.00
0.20 0.30 0.25
6.45 6.55 6.50
3.45 3.55 3.50
6.90 7.10 7.00
E
E1
Gauge
Plane
0.25
Seating
Plane
-
-
-
-
4.60
2.30
L
e1
0.85 1.05 0.95
0.84 0.94 0.89
b
Q
e
All Dimensions in mm
A
A1
7°
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Y1
Dimensions Value (in mm)
C
C1
X
X1
Y
2.30
6.40
1.20
3.30
1.60
1.60
8.00
C1 Y2
Y1
Y2
Y
C
X
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DMN10H220LE
Document number: DS36475 Rev. 3 - 2
DMN10H220LE
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
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Document number: DS36475 Rev. 3 - 2
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