DMN2104L-7 [DIODES]
N-CHANNEL ENHANCEMENT MODE MOSFET; N沟道增强型MOSFET
| 型号： | DMN2104L-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总4页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN2104L
N-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Features
Mechanical Data
•
Low On-Resistance
•
•
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
•
•
53mΩ @VGS = 4.5V
104mΩ @VGS = 2.5V
•
•
•
•
•
•
•
•
•
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
•
•
•
Qualified to AEC-Q101 Standards for High Reliability
SOT-23
Drain
D
Gate
S
G
Source
TOP VIEW
TOP VIEW
Equivalent Circuit
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
VGSS
ID
Value
20
Units
V
V
A
A
Gate-Source Voltage
±12
4.3
Drain Current (Note 3)
Pulsed Drain Current (Note 4)
15
IDM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 3)
Symbol
Value
1.4
Units
W
PD
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
90
°C/W
°C
Rθ
JA
-55 to +150
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
20
⎯
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
500
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
Zero Gate Voltage Drain Current
Gate-Source Leakage
nA
nA
IGSS
±100
VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
0.45
1.4
V
VGS(th)
⎯
42
84
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 4.2A
53
104
Static Drain-Source On-Resistance
RDS (ON)
⎯
mΩ
VGS = 2.5V, ID = 3.1A
VDS =5V, ID = 4.2A
VGS = 0V, IS = 1.0A
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
6.6
0.7
S
V
|Yfs|
VSD
⎯
⎯
⎯
1.2
325
92
pF
pF
pF
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
V
DS = 10V, VGS = 0V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
70
Notes:
1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, on 2oz Copper pad layout with RθJA = 90°C/W.
4. Repetitive rating, pulse width limited by junction temperature.
5. Short duration pulse test used to minimize self-heating effect.
1 of 4
www.diodes.com
October 2008
© Diodes Incorporated
DMN2104L
Document number: DS31560 Rev. 1 - 2
DMN2104L
16
14
16
12
V
= 10V
GS
V
= 4.5V
V
= 5V
GS
DS
V
= 3.0V
12
GS
10
8
V
= 2.5V
GS
8
6
V
= 2.0V
= 1.5V
4
0
4
GS
T
= 150°C
A
T
= 125°C
T
= 85°C
A
A
2
0
T
= 25°C
A
T
= -55°C
V
A
GS
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0.5
1
1.5
2
2.5
3
3.5
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
Fig. 1 Typical Output Characteristic
0.12
0.11
0.1
V
= 4.5V
GS
0.10
0.09
0.08
0.07
0.06
T
= 150°C
A
0.08
0.06
V
= 2.5V
GS
T
T
= 125°C
A
= 85°C
= 25°C
A
0.05
0.04
0.03
0.02
T
V
V
= 4.5V
= 10V
A
GS
0.04
0.02
GS
T
= -55°C
A
0.01
0
0
4
8
12
16
0
2
4
6
8
10
12
14
16
ID, DRAIN CURRENT (A)
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
1.6
1.4
1.4
V
= 10V
GS
1.2
1.0
I
= 10A
D
V
= 4.5V
= 5A
GS
I
= 1mA
1.2
1.0
D
I
D
I
= 250µA
D
0.8
0.6
0.4
0.8
0.6
-50 -25
0
25
50
75 100 125 150
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
2 of 4
www.diodes.com
October 2008
© Diodes Incorporated
DMN2104L
Document number: DS31560 Rev. 1 - 2
DMN2104L
600
500
16
12
T
= 25°C
A
400
300
200
C
8
iss
4
0
C
oss
100
0
C
rss
0
5
10
15
20
25
0.4
0.6
0.8
1
1.2
1.4
VDS, DRAIN-SOURCE VOLTAGE (V)
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Typical Total Capacitance
Fig. 7 Diode Forward Voltage vs. Current
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
R
(t) = r(t) * R
θJA
θ
JA
R
= 170°C/W
θ
JA
0.01
D = 0.01
P(pk)
T
t
1
D = 0.005
t
2
- T = P * R (t)
J
A
θJA
Duty Cycle, D = t /t
1
2
D = Single Pulse
0.001
0.00001 0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Fig. 9 Transient Thermal Response
Ordering Information (Note 7)
Part Number
Case
Packaging
DMN2104L-7
SOT-23
3000/Tape & Reel
Notes:
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
MN2 = Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
MN2
M = Month (ex: 9 = September)
Date Code Key
Year
2008
2009
2010
2011
2012
2013
2014
2015
Code
V
W
X
Y
Z
A
B
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
3 of 4
www.diodes.com
October 2008
© Diodes Incorporated
DMN2104L
Document number: DS31560 Rev. 1 - 2
DMN2104L
Package Outline Dimensions
A
SOT-23
Dim
A
B
C
D
F
G
H
J
K
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013 0.10
0.903 1.10
-
C
B
2.05
3.00
1.83
2.90
0.05
1.00
0.400
0.55
0.11
-
H
M
K
K1
K1
L
M
-
D
F
J
0.45
0.085 0.18
0° 8°
0.61
L
G
α
All Dimensions in mm
Suggested Pad Layout
Dimensions Value (in mm)
Y
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
Z
C
E
X
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
4 of 4
www.diodes.com
October 2008
© Diodes Incorporated
DMN2104L
Document number: DS31560 Rev. 1 - 2
相关型号：
©2020 ICPDF网 联系我们和版权申明