DMN2215UDM-7 [DIODES]
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; 双N沟道增强型场效应晶体管
| 型号： | DMN2215UDM-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总4页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN2215UDM
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
•
•
Dual N-Channel MOSFET
Low On-Resistance
•
•
Case: SOT-26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.015 grams (approximate)
•
•
•
100mΩ @VGS = 4.5V, ID = 2.5A
140mΩ @VGS = 2.5V, ID = 1.5A
215mΩ @VGS = 1.8V, ID = 1A
•
•
•
•
•
•
•
•
•
•
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate to 2kV HBM
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
•
•
•
Qualified to AEC-Q101 Standards for High Reliability
D1
G1
SOT-26
S1
D2
S2
G2
TOP VIEW
Schematic and Pin Configuration
ESD PROTECTED TO 2kV
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
20
Units
V
V
Gate-Source Voltage
±12
VGSS
T
A = 25°C
2.0
1.4
Drain Current (Note 1)
A
A
ID
TA = 85°C
Pulsed Drain Current ( Note 4)
7.0
IDM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Symbol
PD
Rθ
Value
650
Units
mW
°C/W
°C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
192
JA
-55 to +150
TJ, TSTG
Notes:
1. Device mounted on FR-4 PCB, or minimum recommended pad layout
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Pulse width ≤ 10μs, duty cycle ≤ 1%.
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June 2008
© Diodes Incorporated
DMN2215UDM
Document number: DS31176 Rev. 4 - 2
DMN2215UDM
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Symbol Min
Typ Max Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
20
⎯
⎯
V
BVDSS
⎯
⎯
⎯
⎯
1
VGS = 0V, ID = 10μA
μA VDS = 20V, VGS = 0V
μA
IDSS
IGSS
±10
VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
0.6
1.0
V
VGS(th)
⎯
VDS = VCS, ID = 250μA
VGS = 4.5V, ID = 2.5A
80
105
165
100
140
215
Static Drain-Source On-Resistance
RDS (ON)
⎯
mΩ VGS = 2.5V, ID = 1.5A
GS = 1.8V, ID = 1.0A
V
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
5
S
V
|Yfs|
VSD
⎯
⎯
⎯
1.1
VDS =5V, ID = 2.4A
0.73
VGS = 0V, IS = 1.05A
188
44
pF
pF
pF
Ciss
Coss
Crss
td(on)
tr
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DS = 10V, VGS = 0V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
30
8
3.8
19.6
8.3
VDD = 10V, RL = 10Ω
ns
I
D = 1A, VGEN = 4.5V, RG = 6Ω
Turn-Off Delay Time
Fall Time
td(off)
tt
Notes:
5. Short duration pulse test used to minimize self-heating effect.
10
8
8
7
6
5
4
3
2
6
4
2
0
1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
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June 2008
© Diodes Incorporated
DMN2215UDM
Document number: DS31176 Rev. 4 - 2
DMN2215UDM
1.8
1.6
1.4
1.2
1
1
V
= 2.5V
GS
I
= 1.5A
D
V
= 4.5V
GS
I
= 2.5A
D
V
= 1.8V
GS
V
= 2.5V
= 4.5V
0.1
GS
V
GS
V
= 1.8V
GS
I
= 1.0A
D
0.8
0.6
0.01
0.01
0.1
1
10
-50 -25
0
25
50
75
100 125 150
ID, DRAIN-SOURCE CURRENT
TA, AMBIENT TEMPERATURE (°C)
Fig. 4 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
Fig. 3 On-Resistance vs.
Drain-Source Current & Gate Voltage
1,000
100
10
1
f = 1MHz
I
= 250µA
0.8
D
0.6
C
iss
0.4
0.2
0
C
oss
C
rss
0
2
4
6
8
10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
-50 -25
TA, AMBIENT TEMPERATURE (C)
Fig. 5 Gate Threshold Variation with Temperature
0
25
50
75 100 125 150
Fig. 6 Typical Total Capacitance
10
1
0.1
0.01
0.001
0.0001
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
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www.diodes.com
June 2008
© Diodes Incorporated
DMN2215UDM
Document number: DS31176 Rev. 4 - 2
DMN2215UDM
Ordering Information (Note 6)
Part Number
DMN2215UDM-7
Case
SOT-26
Packaging
3000/Tape & Reel
Notes:
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
22N = Marking Code
YM = Date Code Marking
Y = Year ex: U = 2007
22N
M = Month ex: 9 = September
Date Code Key
Year
2007
2008
2009
2010
2011
2012
2013
2014
2015
Code
U
V
W
X
Y
Z
A
B
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Package Outline Dimensions
A
SOT-26
Dim Min Max Typ
A
B
C
D
H
J
K
L
M
0.35 0.50 0.38
1.50 1.70 1.60
2.70 3.00 2.80
B
C
0.95
⎯
⎯
2.90 3.10 3.00
0.013 0.10 0.05
1.00 1.30 1.10
0.35 0.55 0.40
0.10 0.20 0.15
H
K
M
0°
8°
α
⎯
J
L
D
All Dimensions in mm
Suggested Pad Layout
E
E
Dimensions Value (in mm)
Z
G
X
Y
C
E
3.20
1.60
0.55
0.80
2.40
0.95
C
G
Z
Y
X
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
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www.diodes.com
June 2008
© Diodes Incorporated
DMN2215UDM
Document number: DS31176 Rev. 4 - 2
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