DMN2230U-7

更新时间:2024-09-18 10:40:38
品牌:DIODES
描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN2230U-7 概述

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR N沟道增强型网络场效晶体管 小信号场效应晶体管

DMN2230U-7 规格参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:19 weeks
风险等级:1.64Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:441037
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:SOT23-1
Samacsys Released Date:2019-07-25 02:39:10Is Samacsys:N
其他特性:HIGH RELIABILITY配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):2 A
最大漏极电流 (ID):2 A最大漏源导通电阻:0.11 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):30 pF
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.6 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DMN2230U-7 数据手册

通过下载DMN2230U-7数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

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DMN2230U  
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
Low On-Resistance  
Case: SOT-23  
110 mΩ @ VGS = 4.5V  
145 mΩ @ VGS = 2.5V  
230 mΩ @ VGS = 1.8V  
Case Material: Molded Plastic, “Green” Molding  
Compound. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminal Connections: See Diagram  
Terminals: Finish Matte Tin annealed over Copper  
leadframe. Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.008 grams (approximate)  
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Lead, Halogen and Antimony Free, RoHS Compliant  
"Green" Device (Notes 2, 3 and 5)  
Qualified to AEC-Q101 Standards for High Reliability  
SOT-23  
D
G
S
TOP VIEW  
TOP VIEW  
Internal Schematic  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
VGSS  
ID  
Value  
20  
Units  
V
V
A
A
Gate-Source Voltage  
±12  
2.0  
7
Drain Current (Note 1)  
Pulsed Drain Current (Note 4)  
IDM  
Thermal Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
Value  
600  
Units  
mW  
°C/W  
°C  
PD  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
208  
Rθ  
JA  
-55 to +150  
TJ, TSTG  
Notes:  
1. Device mounted on FR-4 PCB, or minimum recommended pad layout  
2. No purposefully added lead. Halogen and Antimony Free.  
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
4. Repetitive rating, pulse width limited by junction temperature.  
5. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants.  
1 of 4  
www.diodes.com  
June 2008  
© Diodes Incorporated  
DMN2230U  
Document number: DS31180 Rev. 4 - 2  
DMN2230U  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 6)  
Symbol Min  
Typ Max Unit  
Test Condition  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Source Leakage  
20  
V
BVDSS  
IDSS  
1
VGS = 0V, ID = 10μA  
μA VDS = 20V, VGS = 0V  
IGSS  
±10  
μA  
VGS = ±12V, VDS = 0V  
ON CHARACTERISTICS (Note 6)  
Gate Threshold Voltage  
0.5  
1.0  
V
VGS(th)  
VDS = VCS, ID = 250μA  
VGS = 4.5V, ID = 2.5A  
VGS = 2.5V, ID = 1.5A  
81  
113  
170  
110  
145  
230  
Static Drain-Source On-Resistance  
RDS (ON)  
mΩ  
V
GS = 1.8V, ID = 1.0A  
Forward Transfer Admittance  
Diode Forward Voltage (Note 6)  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
5
S
V
|Yfs|  
VSD  
VDS =5V, ID = 2.4A  
VGS = 0V, IS = 1.05A  
0.8  
1.1  
188  
44  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
td(on)  
tr  
V
DS = 10V, VGS = 0V  
Output Capacitance  
f = 1.0MHz  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Rise Time  
30  
8
3.8  
19.6  
8.3  
VDD = 10V, RL = 10Ω  
ns  
I
D = 1A, VGEN = 4.5V, RG = 6Ω  
Turn-Off Delay Time  
Fall Time  
td(off)  
tf  
Notes:  
6. Short duration pulse test used to minimize self-heating effect.  
10  
8
8
7
6
5
4
3
2
6
4
2
0
1
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
2 of 4  
www.diodes.com  
June 2008  
© Diodes Incorporated  
DMN2230U  
Document number: DS31180 Rev. 4 - 2  
DMN2230U  
1.8  
1.6  
1.4  
1.2  
1
1
V
= 2.5V  
GS  
I
= 1.5A  
D
V
= 4.5V  
GS  
I
= 2.5A  
D
V
= 1.8V  
GS  
V
= 2.5V  
= 4.5V  
0.1  
GS  
V
GS  
V
= 1.8V  
GS  
I
= 1.0A  
D
0.8  
0.6  
0.01  
0.01  
0.1  
1
10  
-50 -25  
0
25  
50  
75  
100 125 150  
ID, DRAIN-SOURCE CURRENT  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 3 On-Resistance vs.  
Drain-Source Current & Gate Voltage  
Fig. 4 Normalized Static Drain-Source On-Resistance  
vs. Ambient Temperature  
1,000  
100  
10  
1
f = 1MHz  
I
= 250µA  
0.8  
D
0.6  
C
iss  
0.4  
0.2  
0
C
oss  
C
rss  
0
2
4
6
8
10 12 14 16 18 20  
VDS, DRAIN-SOURCE VOLTAGE (V)  
-50 -25  
TA, AMBIENT TEMPERATURE (C)  
Fig. 5 Gate Threshold Variation with Temperature  
0
25  
50  
75 100 125 150  
Fig. 6 Typical Total Capacitance  
10  
1
0.1  
0.01  
0.001  
0.0001  
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9  
1
VSD, SOURCE-DRAIN VOLTAGE (V)  
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage  
3 of 4  
www.diodes.com  
June 2008  
© Diodes Incorporated  
DMN2230U  
Document number: DS31180 Rev. 4 - 2  
DMN2230U  
Ordering Information (Note 7)  
Part Number  
Case  
Packaging  
DMN2230U-7  
SOT-23  
3000/Tape & Reel  
Notes:  
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
22N = Marking Code  
YM = Date Code Marking  
Y = Year ex: U = 2007  
M = Month ex: 9 = September  
22N  
Date Code Key (If Applicable)  
Year  
2007  
2008  
2009  
2010  
2011  
2012  
Code  
U
V
W
X
Y
Z
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
Package Outline Dimensions  
A
SOT-23  
Min  
D
Dim  
A
B
C
D
E
G
H
J
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
B
C
TOP VIEW  
S
G
D
G
E
H
K
K
L
M
M
J
L
α
All Dimensions in mm  
Suggested Pad Layout  
Value (in  
mm)  
Dimensions  
Y
Z
G
X
Y
C
E
3.4  
Z
0.7  
0.9  
1.4  
2.0  
0.9  
G
C
X
E
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product  
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall  
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,  
harmless against all damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written  
approval of the President of Diodes Incorporated.  
4 of 4  
www.diodes.com  
June 2008  
© Diodes Incorporated  
DMN2230U  
Document number: DS31180 Rev. 4 - 2  

DMN2230U-7 替代型号

型号 制造商 描述 替代类型 文档
2N7002K-7 DIODES N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 类似代替
BSS123-7-F DIODES N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 类似代替
MMBF170-7-F DIODES N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 类似代替

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