概述
规格参数
数据手册
替代型号DMN2230U-7 概述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR N沟道增强型网络场效晶体管 小信号场效应晶体管
DMN2230U-7 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Active | 包装说明： | SMALL OUTLINE, R-PDSO-G3 |
| 针数： | 3 | Reach Compliance Code： | compliant |
| ECCN代码： | EAR99 | Factory Lead Time： | 19 weeks |
| 风险等级： | 1.64 | Samacsys Confidence： | 3 |
| Samacsys Status： | Released | Samacsys PartID： | 441037 |
| Samacsys Pin Count： | 3 | Samacsys Part Category： | MOSFET (N-Channel) |
| Samacsys Package Category： | SOT23 (3-Pin) | Samacsys Footprint Name： | SOT23-1 |
| Samacsys Released Date： | 2019-07-25 02:39:10 | Is Samacsys： | N |
| 其他特性： | HIGH RELIABILITY | 配置： | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压： | 20 V | 最大漏极电流 (Abs) (ID)： | 2 A |
| 最大漏极电流 (ID)： | 2 A | 最大漏源导通电阻： | 0.11 Ω |
| FET 技术： | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss)： | 30 pF |
| JESD-30 代码： | R-PDSO-G3 | JESD-609代码： | e3 |
| 湿度敏感等级： | 1 | 元件数量： | 1 |
| 端子数量： | 3 | 工作模式： | ENHANCEMENT MODE |
| 最高工作温度： | 150 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | 260 | 极性/信道类型： | N-CHANNEL |
| 最大功率耗散 (Abs)： | 0.6 W | 认证状态： | Not Qualified |
| 子类别： | FET General Purpose Power | 表面贴装： | YES |
| 端子面层： | Matte Tin (Sn) | 端子形式： | GULL WING |
| 端子位置： | DUAL | 处于峰值回流温度下的最长时间： | 40 |
| 晶体管应用： | SWITCHING | 晶体管元件材料： | SILICON |
| Base Number Matches： | 1 |
DMN2230U-7 数据手册
通过下载DMN2230U-7数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载DMN2230U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
•
Low On-Resistance
•
•
Case: SOT-23
•
•
•
110 mΩ @ VGS = 4.5V
145 mΩ @ VGS = 2.5V
230 mΩ @ VGS = 1.8V
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
•
•
•
•
•
•
•
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2, 3 and 5)
•
•
•
•
Qualified to AEC-Q101 Standards for High Reliability
SOT-23
D
G
S
TOP VIEW
TOP VIEW
Internal Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
VGSS
ID
Value
20
Units
V
V
A
A
Gate-Source Voltage
±12
2.0
7
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
IDM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Symbol
Value
600
Units
mW
°C/W
°C
PD
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
208
Rθ
JA
-55 to +150
TJ, TSTG
Notes:
1. Device mounted on FR-4 PCB, or minimum recommended pad layout
2. No purposefully added lead. Halogen and Antimony Free.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Repetitive rating, pulse width limited by junction temperature.
5. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants.
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www.diodes.com
June 2008
© Diodes Incorporated
DMN2230U
Document number: DS31180 Rev. 4 - 2
DMN2230U
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Symbol Min
Typ Max Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
20
⎯
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
1
VGS = 0V, ID = 10μA
μA VDS = 20V, VGS = 0V
IGSS
±10
μA
VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
0.5
1.0
V
VGS(th)
⎯
VDS = VCS, ID = 250μA
VGS = 4.5V, ID = 2.5A
VGS = 2.5V, ID = 1.5A
81
113
170
110
145
230
Static Drain-Source On-Resistance
RDS (ON)
⎯
mΩ
V
GS = 1.8V, ID = 1.0A
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
DYNAMIC CHARACTERISTICS
Input Capacitance
5
S
V
|Yfs|
VSD
⎯
⎯
⎯
VDS =5V, ID = 2.4A
VGS = 0V, IS = 1.05A
0.8
1.1
188
44
pF
pF
pF
Ciss
Coss
Crss
td(on)
tr
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DS = 10V, VGS = 0V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
30
8
3.8
19.6
8.3
VDD = 10V, RL = 10Ω
ns
I
D = 1A, VGEN = 4.5V, RG = 6Ω
Turn-Off Delay Time
Fall Time
td(off)
tf
Notes:
6. Short duration pulse test used to minimize self-heating effect.
10
8
8
7
6
5
4
3
2
6
4
2
0
1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
2 of 4
www.diodes.com
June 2008
© Diodes Incorporated
DMN2230U
Document number: DS31180 Rev. 4 - 2
DMN2230U
1.8
1.6
1.4
1.2
1
1
V
= 2.5V
GS
I
= 1.5A
D
V
= 4.5V
GS
I
= 2.5A
D
V
= 1.8V
GS
V
= 2.5V
= 4.5V
0.1
GS
V
GS
V
= 1.8V
GS
I
= 1.0A
D
0.8
0.6
0.01
0.01
0.1
1
10
-50 -25
0
25
50
75
100 125 150
ID, DRAIN-SOURCE CURRENT
TA, AMBIENT TEMPERATURE (°C)
Fig. 3 On-Resistance vs.
Drain-Source Current & Gate Voltage
Fig. 4 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
1,000
100
10
1
f = 1MHz
I
= 250µA
0.8
D
0.6
C
iss
0.4
0.2
0
C
oss
C
rss
0
2
4
6
8
10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
-50 -25
TA, AMBIENT TEMPERATURE (C)
Fig. 5 Gate Threshold Variation with Temperature
0
25
50
75 100 125 150
Fig. 6 Typical Total Capacitance
10
1
0.1
0.01
0.001
0.0001
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
3 of 4
www.diodes.com
June 2008
© Diodes Incorporated
DMN2230U
Document number: DS31180 Rev. 4 - 2
DMN2230U
Ordering Information (Note 7)
Part Number
Case
Packaging
DMN2230U-7
SOT-23
3000/Tape & Reel
Notes:
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
22N = Marking Code
YM = Date Code Marking
Y = Year ex: U = 2007
M = Month ex: 9 = September
22N
Date Code Key (If Applicable)
Year
2007
2008
2009
2010
2011
2012
Code
U
V
W
X
Y
Z
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Package Outline Dimensions
A
SOT-23
Min
D
Dim
A
B
C
D
E
G
H
J
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
B
C
TOP VIEW
S
G
D
G
E
H
K
K
L
M
M
J
L
α
All Dimensions in mm
Suggested Pad Layout
Value (in
mm)
Dimensions
Y
Z
G
X
Y
C
E
3.4
Z
0.7
0.9
1.4
2.0
0.9
G
C
X
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
4 of 4
www.diodes.com
June 2008
© Diodes Incorporated
DMN2230U
Document number: DS31180 Rev. 4 - 2
DMN2230U-7 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| 2N7002K-7 | DIODES | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 类似代替 |
|
| BSS123-7-F | DIODES | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 类似代替 |
|
| MMBF170-7-F | DIODES | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 类似代替 |
|
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