MMBF170-7-F [DIODES]

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; N沟道增强型网络场效晶体管


型号：	MMBF170-7-F
厂家：	DIODES INCORPORATED
描述：	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR N沟道增强型网络场效晶体管晶体晶体管
文件：	总4页 (文件大小：71K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SPICE MODELS: MMBF170

MMBF170

Lead-free Green

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT

TRANSISTOR

Features

Low On-Resistance

SOT-23

Low Gate Threshold Voltage

Low Input Capacitance

Dim

Min

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.085

0°

Max

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

0.180

8°

Fast Switching Speed

Low Input/Output Leakage

Lead Free/RoHS Compliant (Note 2)

TOP VIEW

Mechanical Data

Case: SOT-23

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Drain

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

Gate

Marking: (See Page 2) K6Z

All Dimensions in mm

Ordering & Date Code Information: See Page 2

Weight: 0.008 grams (approximate)

Source

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

V_DSS

MMBF170

Units

Drain-Source Voltage

V_DGR

Drain-Gate Voltage R_GS£ 1.0MW

Gate-Source Voltage

Continuous

Pulsed

±20

±40

V_GSS

I_D

500

800

Drain Current (Note 1)

Continuous

Pulsed

300

1.80

mW/°C

P_d

Total Power Dissipation (Note 1)

R_qJA

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

417

K/W

T_j, T_STG

-55 to +150

°C

Note: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,

which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

DS30104 Rev. 8 - 2

1 of 4

MMBF170

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ã Diodes Incorporated

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

OFF CHARACTERISTICS (Note 3)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

Symbol

Min

Typ

Max

Unit

Test Condition

BV_DSS

I_DSS

V_GS= 0V, I_D= 100mA

V_DS= 60V, V_GS= 0V

V_GS= ±15V, V_DS= 0V

1.0

±10

µA

I_GSS

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V_GS(th)

R_{DS (ON)}

g_FS

V_DS= V_GS, I_D= 250mA

0.8

2.1

3.0

V_GS= 10V, I_D= 200mA

5.0

5.3

Static Drain-Source On-Resistance

_GS= 4.5V, I_D= 50mA

V_DS=10V, I_D= 0.2A

Forward Transconductance

DYNAMIC CHARACTERISTICS

Input Capacitance

C_iss

C_oss

C_rss

V_DS= 10V, V_GS= 0V

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Time

2.0

5.0

t_on

t_off

V_DD= 25V, I_D= 0.5A,

_GS= 10V, R_GEN= 50W

Turn-Off Time

Notes: 3. Short duration test pulse used to minimize self-heating effect.

(Note 4)

Ordering Information

Device

Packaging

Shipping

MMBF170-7-F

SOT-23

3000/Tape & Reel

Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

K6Z = Product Type Marking Code

YM = Date Code Marking

Y = Year ex: N = 2002

M = Month ex: 9 = September

K6Z

Date Code Key

Year

1998

1999

2000

2001

2002

2003

2004

2005

2006

2007

2008

2009

Code

Month

Code

Jan

Feb

March

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

DS30104 Rev. 8 - 2

2 of 4

MMBF170

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1.0

V_GS= 10V

T_j= 25°C

10V

9.0V

8.0V

7.0V

6.5V

6.0V

5.5V

5.0V

4.5V

4.0V

3.5V

3.0V

2.5V

2.1V

0.8

0.6

V_GS= 5.0V

5.5V

5.0V

V_GS= 10V

0.4

0.2

2.1V

0.2

0.4

0.6

0.8

1.0

I_D, DRAIN CURRENT (A)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 1 On-Region Characteristics

Fig. 2 On-Resistance vs Drain Current

2.0

1.5

V_GS= 10V, I_D= 0.5A

I_D= 500mA

V_GS= 5.0V, I_D= 0.05A

I_D= 50mA

1.0

0.5

10 12 14 16 18

-55 -30

-5

70 95

120 145

T_j, JUNCTION TEMPERATURE (°C)

V_GS, GATE TO SOURCE VOLTAGE (V)

Fig. 3 On-Resistance vs Junction Temperature

Fig. 4 On-Resistance vs. Gate-Source Voltage

350

300

250

200

150

100

200

175

150

75 100 125

T_A, AMBIENT TEMPERATURE (°C)

Fig. 5, Max Power Dissipation vs

Ambient Temperature

DS30104 Rev. 8 - 2

3 of 4

MMBF170

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IMPORTANT NOTICE

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further

notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither

does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will

agreetoholdDiodesIncorporatedandallthecompanieswhoseproductsarerepresentedonourwebsite,harmlessagainstalldamages.

LIFE SUPPORT

DiodesIncorporatedproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithouttheexpressedwrittenapprovalofthe

PresidentofDiodesIncorporated.

DS30104 Rev. 8 - 2

4 of 4

MMBF170

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