DMN2550UFA-7B [DIODES]

Low On-Resistance;


型号：	DMN2550UFA-7B
厂家：	DIODES INCORPORATED
描述：	Low On-Resistance
文件：	总6页 (文件大小：288K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DMN2550UFA

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits



Low Package Profile, 0.4mm Maximum Package Height

0.48mm²Package Footprint, 16 Times Smaller than SOT23

Low On-Resistance

I_Dmax

T_A= +25°C

V_(BR)DSS

R_DS(ON)max

0.45 Ω @ V_GS= 4.5V

0.55 Ω @ V_GS= 2.5V

0.75 Ω @ V_GS= 1.8V

1.0 Ω @ V_GS= 1.5V

Very Low Gate Threshold Voltage, 1.0V Max

ESD Protected Gate

20V

0.6 A

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Description

This MOSFET is designed to minimize the on-state resistance

(R_DS(ON)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Mechanical Data



Case: X2-DFN0806-3

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – NiPdAu over Copper Leadframe.



Applications



General Purpose Interfacing Switch

Power Management Functions

Analog Switch

Solderable per MIL-STD-202, Method 208

Weight: 0.001 grams (Approximate)



Drain

Body

Diode

Gate

Protection

Diode

Source

Top View

Package Pin Configuration

ESD PROTECTED

Equivalent Circuit

Bottom View

Ordering Information (Note 4)

Part Number

Case

Packaging

10K/Tape & Reel

DMN2550UFA-7B

X2-DFN0806-3

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

R1 = Product Type Marking Code

Top View

Bar Denotes Gate

and Source Side

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September 2014

DMN2550UFA

Document number: DS37120 Rev. 2 - 2

DMN2550UFA

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Units

Gate-Source Voltage

±8

V_GSS

_A= +25°C

Steady

State

0.6

0.5

Continuous Drain Current (Note 5) V_GS= 4.5V

Pulsed Drain Current (Note 6)

I_D

T_A= +70°C

1.5

I_DM

Thermal Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

P_D

R_

Value

360

Units

°C/W

°C

Total Power Dissipation (Note 5)

Steady State

Thermal Resistance, Junction to Ambient (Note 5)

Operating and Storage Temperature Range

353

-55 to +150

T_J,T_STG

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

Symbol

Min

Typ

Max

Unit

Test Condition

—

BV_DSS

I_DSS

V_GS= 0V, I_D= 250μA

V_DS= 16V, V_GS= 0V

V_GS= ±8V, V_DS= 0V

100

±10

µA

I_GSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.4

—

0.28

0.33

0.4

0.5

—

1.0

0.45

0.55

0.75

1.0

ꢀ

V_GS(th)

R_DS(ON)

V_SD

V_DS= V_GS, I_D= 250μA

_GS= 4.5V, I_D= 200mA

V_GS= 2.5V, I_D= 100mA

V_GS= 1.8V, I_D= 50mA

V_GS= 1.5V, I_D= 10mA

V_GS= 0V, I_S= 10mA

Static Drain-Source On-Resistance

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

1.0

52.5

6.3

—

C_iss

C_oss

C_rss

Q_g

_DS= 16V, V_GS= 0V,

Output Capacitance

f = 1.0MHz

5.2

Reverse Transfer Capacitance

Total Gate Charge

0.88

0.11

0.10

7.1

V_GS= 4.5V, V_DS= 10V,

I_D= 250mA

Gate-Source Charge

Gate-Drain Charge

Q_gs

Q_gd

t_D(on)

t_r

Turn-On Delay Time

Turn-On Rise Time

V_DD= 10V, V_GS= 4.5V,

R_L= 47ꢀ, R_G= 10ꢀ

Turn-Off Delay Time

105

t_D(off)

t_f

Turn-Off Fall Time

Notes:

5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

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DMN2550UFA

Document number: DS37120 Rev. 2 - 2

DMN2550UFA

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

= 5.0V

= 1.5V

= 2.0V

= 3.0V

= 4.0V

= 4.5V

= 8.0V

= 1.2V

= 150°C

= 85°C

= 125°C

= 25°C

= 1.0V

= 0.9V

= -55°C

0.5

1.5

2.5

0.5

1.5

2.5

V_DS, DRAIN-SOURCE VOLTAGE (V)

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

Figure 2 Typical Transfer Characteristics

1.2

0.4

0.3

0.2

0.1

= 4.5V

= 150°C

= 85°C

= 1.2V

= 125°C

0.8

0.6

0.4

0.2

= 1.5V

= 25°C

= -55°C

= 1.8V

= 2.5V

= 4.5V

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

I_D, DRAIN-SOURCE CURRENT (A)

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

I_D, DRAIN CURRENT (A)

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

0.5

0.4

0.3

0.2

0.1

= 2.5V

= 4.5V

= 200mA

= 500mA

1.6

1.2

0.8

0.4

= 2.5V

= 4.5V

= 200mA

= 500mA

-50 -25

T_J, JUNCTION TEMPERATURE (

Figure 5 On-Resistance Variation with Temperature

75 100 125 150

-50 -25

T_J, JUNCTION TEMPERATURE (

Figure 6 On-Resistance Variation with Temperature

75 100 125 150



C)

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September 2014

DMN2550UFA

Document number: DS37120 Rev. 2 - 2

DMN2550UFA

1.2

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.8

0.6

0.4

0.2

= 1mA

= 150°C

= 250µA

= 125°C

= 85°C

= 25°C

= -55°C

0.3

0.6

0.9

1.2

1.5

-50 -25

75 100 125 150

V_SD, SOURCE-DRAIN VOLTAGE (V)

T_J, JUNCTION TEMPERATURE (



Figure 8 Diode Forward Voltage vs. Current

Figure 7 Gate Threshold Variation vs. Ambient Temperature

100

iss

= 10V

= 250mA

oss

rss

f = 1MHz

0.2 0.4 0.6 0.8

1.2 1.4 1.6

10 12 14 16 18 20

Q_g, TOTAL GATE CHARGE (nC)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 9 Typical Junction Capacitance

Figure 10 Gate Charge

DS(on)

Limited

= 10s

0.1

= 1s

= 100ms

T_J(max)= 150°C

T_A= 25°C

= 10ms

= 1ms

V_GS= 4.5V

Single Pulse

0.01 ^{DUT on 1 * MRP Board}

P_W= 100µs

0.1

100

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 11 SOA, Safe Operation Area

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September 2014

DMN2550UFA

Document number: DS37120 Rev. 2 - 2

DMN2550UFA

D = 0.9

D = 0.7

D = 0.5

D = 0.3

0.1 _{D = 0.1}

D = 0.05

D = 0.02

0.01 _{D = 0.01}

D = 0.005

Rthja(t) = r(t) * Rthja

Rthja= 356°C/W

Duty Cycle, D = t1/ t2

Single Pulse

0.001

0.000001 0.00001

0.1

t1, PULSE DURATION TIME (sec)

Figure 12 Transient Thermal Resistance

100

0.0001

0.001

0.01

1000

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

X2-DFN0806-3

Seating Plane

Dim Min

Max Typ

0.375 0.40 0.39

0.05 0.02

0.10

0.10 0.20 0.15

0.55 0.65 0.60

0.35 0.45 0.40

0.75 0.85 0.80

0.20 0.30 0.25

L (2x)

0.35

0.20

b (2x)

0.20 0.30 0.25

All Dimensions in mm

Pin#1

R0.075

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September 2014

DMN2550UFA

Document number: DS37120 Rev. 2 - 2

DMN2550UFA

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Value

(in mm)

0.350

0.200

0.450

0.550

0.375

0.475

1.000

Dimensions

X (2x)

Y (2x)

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

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noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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September 2014

DMN2550UFA

Document number: DS37120 Rev. 2 - 2

DMN2550UFA-7B [DIODES]

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