DMN2600UFB [DIODES]
N-CHANNEL ENHANCEMENT MODE MOSFET; N沟道增强型MOSFET
| 型号： | DMN2600UFB |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN2600UFB
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
•
•
•
•
•
•
•
•
Low On-Resistance
Low Gate Threshold Voltage
Fast Switching Speed
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
ESD Protected Gate 1kV
Qualified to AEC-Q101 Standards for High Reliability
•
•
Case: DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Marking Information: See Page 5
Ordering Information: See Page 5
Weight: 0.001 grams (approximate)
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•
•
•
•
•
DFN1006-3
Drain
Body
Diode
S
Gate
D
Gate
Protection
G
Source
Diode
Bottom View
Top View
Internal Schematic
ESD PROTECTED TO 1kV
Equivalent Circuit
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
25
Unit
V
Gate-Source Voltage
±8
V
VGSS
TA = 25°C
TA = 85°C
Steady
State
1.3
0.9
Continuous Drain Current (Note 3)
Pulsed Drain Current
A
A
ID
3.0
IDM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 3)
Symbol
Value
0.54
Unit
W
PD
234
°C/W
°C
Thermal Resistance, Junction to Ambient @TA = 25°C
Operating and Storage Temperature Range
RθJA
-55 to +150
TJ, TSTG
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
3. Device mounted on FR-4 substrate PCB board, with minimum recommended pad layout.
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© Diodes Incorporated
DMN2600UFB
Document number: DS31983 Rev. 3 - 2
DMN2600UFB
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
25
-
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
1
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
μA
μA
VDS = 25V, VGS = 0V
VGS = ±8V, VDS = 0V
-
10
IGSS
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
0.45
-
-
-
1.0
350
450
600
-
V
VGS(th)
VDS = VGS, ID = 250μA
V
V
V
GS = 4.5V, ID = 200mA
GS = 2.5V, ID = 100mA
GS = 1.8V, ID = 75mA
mΩ
Static Drain-Source On-Resistance
RDS (ON)
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 5)
Input Capacitance
40
-
-
-
mS
V
|Yfs|
VSD
VDS = 3V, ID = 200mA
VGS = 0V, IS = 300mA
1.2
-
-
-
-
-
-
-
-
-
-
-
70.13
7.56
5.59
72.3
0.85
0.16
0.11
4.1
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS =0V, VGS = 0V, f = 1MHz
Total Gate Charge
nC
nC
nC
ns
ns
ns
ns
Qg
VGS = 4.5V, VDS = 15V,
ID = 1A
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
tD(on)
tr
Turn-On Delay Time
11.5
34.8
20.9
Turn-On Rise Time
VDS = 15V, RL=15Ω
Turn-Off Delay Time
VGS = 10V, RG = 6Ω
tD(off)
tf
Turn-Off Fall Time
Notes:
4. Short duration pulse test used to minimize self-heating effect.
5. Guaranteed by design. Not subject to production testing.
1.5
1.0
2.0
V
= 10V
V
= 5V
GS
DS
V
= 4.5V
GS
1.5
1.0
V
= 3.0V
GS
V
= 2.5V
GS
V
= 2.0V
GS
0.5
V
= 1.5V
GS
T
= 150°C
0.5
0
A
T
= 85°C
A
T
= 125°C
A
T
= 25°C
A
T
= -55°C
A
0
0
0
1
2
3
4
5
0.5
1
1.5
2
2.5
3
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
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© Diodes Incorporated
DMN2600UFB
Document number: DS31983 Rev. 3 - 2
DMN2600UFB
0.8
0.6
0.8
0.6
V
= 4.5V
GS
T
= 150°C
A
T
T
= 125°C
= 85°C
V
= 1.8V
A
GS
0.4
0.4
A
V
V
= 2.5V
= 4.5V
GS
T
= 25°C
A
GS
0.2
0
0.2
0
T
= -55°C
A
0
0.25
0.5
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
0.75
1
1.25
1.5
0
0.4
0.8
1.2
1.6
2
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0.8
0.6
0.4
1.6
V
= 4.5V
GS
I
= 1.0A
1.4
1.2
D
V
I
= 2.5V
GS
= 500mA
D
V
I
= 2.5V
GS
= 500mA
D
1.0
V
= 4.5V
= 1.0A
GS
I
0.2
0
D
0.8
0.6
-50 -25
0
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
1.2
2.0
1.6
1.0
I
= 1mA
D
0.8
0.6
T
= 25°C
1.2
0.8
A
I
= 250µA
D
0.4
0.4
0
0.2
0
0
0.2
0.4
0.6
0.8
1
1.2
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100 125 150
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
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© Diodes Incorporated
DMN2600UFB
Document number: DS31983 Rev. 3 - 2
DMN2600UFB
100
10
1
1,000
100
C
iss
T
= 150°C
= 125°C
A
T
A
C
oss
T
= 85°C
A
C
rss
10
T
= 25°C
A
f = 1MHz
1
0
5
10
15
20
25
30
0
5
10
15
20
25
30
VDS, DRAIN-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
Fig. 9 Typical Total Capacitance
10
8
V
= 15V
= 1A
DS
I
D
6
4
2
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
R
(t) = r(t) * R
θJA
θJA
R
= 235°C/W
θJA
P(pk)
T
0.01
D = 0.01
t
1
t
2
D = 0.005
- T = P * R (t)
J
A
θJA
Duty Cycle, D = t /t
1
2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
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© Diodes Incorporated
DMN2600UFB
Document number: DS31983 Rev. 3 - 2
DMN2600UFB
Ordering Information (Note 6)
Part Number
DMN2600UFB-7
Case
DFN1006-3
Packaging
3000/Tape & Reel
Notes:
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
NA = Product Type Marking Code
Dot Denotes Drain Side
NA
Package Outline Dimensions
DFN1006-3
Dim Min Max Typ
A
A
A1
b1
b2
D
0.47
0
0.10
0.45
0.53 0.50
0.05 0.03
0.20 0.15
0.55 0.50
A1
D
0.95 1.075 1.00
0.55 0.675 0.60
E
e
0.35
0.30 0.25
0.30 0.25
b1
⎯
0.20
0.20
⎯
⎯
L1
L2
L3
e
b2
E
0.40
⎯
All Dimensions in mm
L2
L3
L1
Suggested Pad Layout
C
Dimensions Value (in mm)
Z
G1
G2
X
X1
Y
1.1
0.3
0.2
0.7
0.25
0.4
0.7
X1
G2
X
C
G1
Y
Z
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© Diodes Incorporated
DMN2600UFB
Document number: DS31983 Rev. 3 - 2
DMN2600UFB
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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July 2010
© Diodes Incorporated
DMN2600UFB
Document number: DS31983 Rev. 3 - 2
相关型号：
DMN2600UFB-7B
Small Signal Field-Effect Transistor, 1.3A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC, DFN1006-3, 3 PIN
DIODES
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