DMN2991UFZ-7B [DIODES]
Small Signal Field-Effect Transistor,;
| 型号： | DMN2991UFZ-7B |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：493K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN2991UFZ
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low Package Profile, 0.42mm Maximum Package Height
0.62mm × 0.62mm Package Footprint
ID Max
BVDSS
RDS(ON) Max
TA = +25°C
Low On-Resistance
0.99Ω @ VGS = 4.5V
1.2Ω @ VGS = 2.5V
1.8Ω @ VGS = 1.8V
2.4Ω @ VGS = 1.5V
0.55A
0.50A
0.41A
0.35A
Very Low Gate Threshold Voltage, 1.0V Maximum
ESD Protected Gate
20V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) yet maintain superior switching performance, making it ideal
for high-efficiency power management applications.
Case: X2-DFN0606-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish—NiPdAu over Copper Leadframe. Solderable
Applications
e4
per MIL-STD-202, Method 208
Weight: 0.001 grams (Approximate)
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
X2-DFN0606-3
ESD PROTECTED
Top View
Bottom View
Equivalent Circuit
Package Pin Configuration
Ordering Information (Note 4)
Part Number
Case
Packaging
DMN2991UFZ-7B
X2-DFN0606-3
10k/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
X2-DFN0606-3
94
94 = Product Type Marking Code
Bar Denotes Gate and Source Side
Top View
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© Diodes Incorporated
DMN2991UFZ
Document number: DS41114 Rev. 3 - 2
DMN2991UFZ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
20
Unit
V
Gate-Source Voltage
±8
V
VGSS
Steady
State
TA = +25°C
TA = +75°C
0.55
0.44
A
Continuous Drain Current (Note 5) VGS = 4.5V
ID
Maximum Body Diode Forward Current (Note 6)
0.7
A
A
IS
Pulsed Drain Current (380μs Pulse, Duty Cycle = 1%)
1.5
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
0.45
Unit
mW
°C/W
mW
°C/W
°C
Power Dissipation (Note 5)
Steady State
Steady State
Steady State
Steady State
PD
RθJA
Thermal Resistance, Junction to Ambient (Note 5)
Power Dissipation (Note 6)
279
0.53
PD
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
148
RθJA
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
20
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 16V, VGS = 0V
VGS = ±5V, VDS = 0V
µA
µA
1
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.4
—
—
—
—
—
0.8
0.60
0.75
0.90
1.2
1.0
0.99
1.2
1.8
2.4
—
V
Ω
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 100mA
VGS = 2.5V, ID = 50mA
VGS = 1.8V, ID = 20mA
VGS = 1.5V, ID = 10mA
VGS = 1.2V, ID = 1mA
VGS = 0V, IS = 150mA
Static Drain-Source On-Resistance
2.0
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
0.6
1.0
—
—
—
—
—
—
—
—
—
—
—
—
21.5
4.9
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
nC
nC
nC
ns
Ciss
Coss
Crss
Qg
VDS = 16V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3.7
0.35
0.07
0.08
5.6
VGS = 4.5V, VDS = 10V,
ID = 250mA
Gate-Source Charge
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
Turn-On Delay Time
VDD = 10V, VGS = 4.5V,
RL = 47Ω, Rg = 10Ω,
ID = 200mA
Turn-On Rise Time
4.9
ns
Turn-Off Delay Time
60.6
27.6
12.3
1.1
ns
tD(OFF)
tF
Turn-Off Fall Time
ns
Reverse Recovery Time
Reverse Recovery Charge
ns
tRR
IF = 1.0A, di/dt = 100A/μs
IF = 1.0A, di/dt = 100A/μs
nC
QRR
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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DMN2991UFZ
Document number: DS41114 Rev. 3 - 2
DMN2991UFZ
1.0
0.8
0.6
0.4
0.2
0.0
1
0.8
0.6
0.4
0.2
0
VGS = 2.0V
VGS = 2.5V
VGS = 3.0V
VDS = 5V
VGS = 4.0V
VGS = 4.5V
VGS = 1.5V
85℃
25℃
-55℃
VGS = 1.2V
150℃
125℃
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
VGS, GATE-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
1.4
1.2
1
1.8
1.6
1.4
1.2
1
ID = 100mA
ID = 50mA
VGS = 1.8V
ID = 20mA
0.8
0.6
0.4
0.2
0
VGS = 2.5V
VGS = 4.5V
0.8
0.6
0.4
0.2
0
2
4
6
8
0
0.2
0.4
0.6
0.8
1
VGS, GATE-SOURCE VOLTAGE (V)
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. Typical Transfer Characteristic
1.8
1.6
1.4
1.2
1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
VGS = 4.5V, ID = 100mA
VGS = 4.5V
150℃
VGS = 2.5V, ID = 50mA
125℃
85℃
25℃
VGS = 1.8V, ID = 20mA
-55℃
0.8
0.6
0
0.2
0.4
0.6
0.8
1
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
Figure 6. On-Resistance Variation with Junction
Temperature
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DMN2991UFZ
Document number: DS41114 Rev. 3 - 2
DMN2991UFZ
1
0.8
0.6
0.4
0.2
0
1
0.9
0.8
0.7
0.6
0.5
VGS = 1.8V, ID = 20mA
VGS = 2.5V, ID = 50mA
ID = 1mA
ID = 250μA
VGS = 4.5V, ID = 100mA
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
Figure 8. Gate Threshold Variation vs. Junction
Temperature
1
0.8
0.6
0.4
0.2
0
100
VGS = 0V
f = 1MHz
Ciss
10
Coss
TJ = 85oC
TJ = 25oC
Crss
TJ = 150oC
TJ = 125oC
TJ = -55oC
1
0
4
8
12
16
20
0
0.3
0.6
0.9
1.2
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
10
RDS(ON)
Limited
PW = 100µs
PW = 1ms
PW = 10ms
1
6
PW = 100ms
4
0.1
TJ(Max) = 150℃
TC = 25℃
VDS = 10V, ID = 250mA
Single Pulse
DUT on 1*MRP
Board
PW = 1s
PW = 10s
2
DC
10
VGS = 4.5V
0.01
0
0.1
1
100
0
0.2
0.4
0.6
0.8
Qg (nC)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
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DMN2991UFZ
Document number: DS41114 Rev. 3 - 2
DMN2991UFZ
1
D=0.7
D=0.5
D=0.9
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJA(t) = r(t) * RθJA
D=Single Pulse
RθJA = 263℃/W
Duty Cycle, D = t1 / t2
0.001
1E-06 1E-05 0.0001 0.001
0.01
0.1
1
10
100
1000
10000 100000 1000000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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Document number: DS41114 Rev. 3 - 2
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Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
X2-DFN0606-3
A
A1
X2-DFN0606-3
Seating Plane
Dim
A
A1
b
Min
0.36
0
Max
0.42
0.05
Typ
0.39
0.02
0.15
0.62
D
0.10
0.57
0.20
0.67
D2
D
D3
e/2
D2
D3
E
E2
e
k
L
L2
0.155 BSC
0.185 BSC
0.67
0.57
0.40
0.62
0.50
0.60
0.35 BSC
0.16 REF
0.21
E2
e
E
0.09
0.11
0.15
0.21
0.31
All Dimensions in mm
b( 2x)
k
L2
L( 2x)
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
X2-DFN0606-3
X
Dimensions
Value (in mm)
Y
C
X
X1
X2
Y
0.350
0.280
0.350
0.760
0.200
0.600
C
Y1
Y1
X1
X2
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DMN2991UFZ
Document number: DS41114 Rev. 3 - 2
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
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© Diodes Incorporated
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Document number: DS41114 Rev. 3 - 2
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