DMN3030LFG-13 [DIODES]
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | DMN3030LFG-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总6页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN3030LFG
Green
N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
Features
ID
Low RDS(ON) – ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
V(BR)DSS
RDS(ON)
Package
TA = +25°C
18mΩ @ VGS = 10V
27mΩ @ VGS = 4.5V
8.6A
5.5A
POWERDI
3333-8
30V
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on) and yet maintain superior switching
)
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: POWERDI3333-8
Applications
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.072 grams (approximate)
Backlighting
DC-DC Converters
Power Management Functions
POWERDI3333-8
8
Pin 1
1
S
S
S
G
7
6
5
2
3
4
D
D
D
D
Top View
Internal Schematic
Top View
Bottom View
Ordering Information (Note 4)
Part Number
DMN3030LFG-7
DMN3030LFG-13
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2000 / Tape & Reel
3000 / Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
N30 = Product marking code
YYWW = Date code marking
YY = Last digit of year (ex: 10 for 2010)
WW = Week code (01 – 53)
N30
1 of 6
www.diodes.com
March 2013
© Diodes Incorporated
DMN3030LFG
Document number: DS35499 Rev. 5 - 2
POWERDI is a registered trademark of Diodes Incorporated.
DMN3030LFG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Units
V
V
Gate-Source Voltage
±25
VGSS
TA = +25°C
TA = +70°C
Steady
State
5.3
4.2
A
A
A
A
ID
ID
ID
ID
Continuous Drain Current (Note 5) VGS = 10V
Continuous Drain Current (Note 6) VGS = 10V
T
T
A = +25°C
A = +70°C
6.8
5.2
t<10s
TA = +25°C
A = +70°C
Steady
State
8.6
6.8
T
TA = +25°C
TA = +70°C
11
8.8
t<10s
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
70
3
A
A
IDM
IS
Maximum Body Diode continuous Current
Thermal Characteristics
Characteristic
Symbol
PD
Value
0.9
Units
TA = +25°C
Total Power Dissipation (Note 5)
W
0.5
148
89
2.3
1.4
56
TA = +70°C
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
R
JA
TA = +25°C
TA = +70°C
Steady state
t<10s
PD
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
34
6.9
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
R
JC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
30
—
—
—
—
—
—
—
—
100
±1
V
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
GS = ±25V, VDS = 0V
Zero Gate Voltage Drain Current TJ = +25°C
nA
µA
nA
V
Gate-Source Leakage
IGSS
100
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
0.8
—
—
—
—
1.2
10
16
6
2.1
18
27
—
V
VDS = VGS, ID = 250μA
V
GS = 10V, ID = 10A
Static Drain-Source On-Resistance
RDS (ON)
mꢀ
VGS = 4.5V, ID = 7.5A
VDS = 5V, ID = 10A
VGS = 0V, IS = 1A
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = 4.5V
Total Gate Charge VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
|Yfs|
VSD
S
V
0.7
1.0
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
—
—
—
—
—
—
—
—
—
—
—
—
751
121
110
1.5
9
17.4
2.2
3
2.5
6.6
19.0
6.3
—
—
—
—
—
—
—
—
—
—
—
—
VDS = 10V, VGS = 0V,
f = 1.0MHz
pF
ꢀ
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 4.5V, VDS = 15V, ID =6A
nC
ns
VGS = 10V, VDS = 15V,
ID = 6A
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 15V, VGS = 10V,
RG = 6ꢀ, RL = 1.8ꢀ, ID = 6.7A
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
2 of 6
www.diodes.com
March 2013
© Diodes Incorporated
DMN3030LFG
Document number: DS35499 Rev. 5 - 2
POWERDI is a registered trademark of Diodes Incorporated.
DMN3030LFG
30
25
30
25
V
= 5.0V
DS
20
15
10
20
15
10
T
= 150°C
A
T
= 125°C
A
T
= 85°C
A
5
0
5
0
T
= 25°C
A
T
= -55°C
A
0
0.5
1.0
1.5
2.0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS, GATE-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
Fig.1 Typical Output Characteristic
0.040
0.035
0.020
0.016
V
= 4.5V
GS
V
= 4.5V
GS
T
= 150°C
0.030
0.025
0.020
0.015
0.010
A
T
= 125°C
= 85°C
A
0.012
0.008
T
A
V
= 10V
GS
T
= 25°C
A
T
= -55°C
A
0.004
0
0.005
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
ID, DRAIN-SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
1.6
1.4
0.040
0.035
V
= 10V
GS
I
= 10A
D
0.030
0.025
V
= 4.5V
GS
V
= 4.5V
= 5A
GS
I
= 5A
D
1.2
1.0
I
D
0.020
0.015
0.010
V
= 10V
GS
0.8
0.6
I
= 10A
D
0.005
0
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 5 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
C)
C)
3 of 6
www.diodes.com
March 2013
© Diodes Incorporated
DMN3030LFG
Document number: DS35499 Rev. 5 - 2
POWERDI is a registered trademark of Diodes Incorporated.
DMN3030LFG
2.0
1.8
30
25
1.6
1.4
1.2
1.0
0.8
0.6
0.4
I
= 1mA
D
20
15
10
I
= 250µA
D
T
= 25°C
A
5
0
0.2
0
-50 -25
0
25
50 75 100 125 150
C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ, JUNCTION TEMPERATURE (
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
10,000
10
8
V
I
= 15V
DS
= 6A
D
1,000
6
4
C
iss
C
oss
100
10
C
rss
2
0
f = 1MHz
0
5
10
15
20
25
30
0
2
4
6
8
10 12 14 16 18 20
Qg, TOTAL GATE CHARGE (nC)
Fig. 10 Gate Charge
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
100
10
400
350
R
DS(on)
Limited
Single Pulse
P
= 10µs
W
R
R
T
= 148
C/W
= r * R
JA
JA
JA(t)
(t)
300
250
200
150
100
- T = P * R
J
A
JA(t)
DC
1
P
= 10s
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
0.1
TJ(max) = 150°C
TA = 25°C
P
= 100µs
W
VGS = 10V
Single Pulse
DUT on 1 * MRP Board
50
0
0.01
1E-05 1E-04 0.001 0.01 0.1
1
10 100 1,000
0.1
1
10
100
t1, PULSE DURATION TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Single Pulse Maximum Power Dissipation
Fig. 12 SOA, Safe Operation Area
4 of 6
www.diodes.com
March 2013
© Diodes Incorporated
DMN3030LFG
Document number: DS35499 Rev. 5 - 2
POWERDI is a registered trademark of Diodes Incorporated.
DMN3030LFG
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
0.01
RJA(t) = r(t) * R
RJA = 148°C/W
JA
Duty Cycle, D = t1/ t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10 100
1,000
t1, PULSE DURATION TIME (sec)
Fig. 13 Transient Thermal Resistance
Package Outline Dimensions
POWERDI®3333-8
Dim Min Max Typ
A
A3
D
E
3.25 3.35 3.30
3.25 3.35 3.30
A1
D
D2 2.22 2.32 2.27
E2 1.56 1.66 1.61
D2
A
A1
A3
b
b2
L
0.75 0.85 0.80
L
(4x)
0
0.05 0.02
0.203
1
4
Pin 1 ID
0.27 0.37 0.32
b2
(4x)
0.20
E
0.35 0.45 0.40
E2
L1
e
Z
0.39
0.65
0.515
8
5
L1
(3x)
All Dimensions in mm
Z (4x)
e
b (8x)
Suggested Pad Layout
X
G
Dimensions
Value (in mm)
0.650
C
G
8
5
4
0.230
Y2
Y3
G1
Y1
G1
Y
Y1
Y2
Y3
X
0.420
3.700
2.250
1.850
0.700
2.370
Y
1
X2
0.420
X2
C
5 of 6
www.diodes.com
March 2013
© Diodes Incorporated
DMN3030LFG
Document number: DS35499 Rev. 5 - 2
POWERDI is a registered trademark of Diodes Incorporated.
DMN3030LFG
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
6 of 6
www.diodes.com
March 2013
© Diodes Incorporated
DMN3030LFG
Document number: DS35499 Rev. 5 - 2
POWERDI is a registered trademark of Diodes Incorporated.
相关型号：
©2020 ICPDF网 联系我们和版权申明