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DMN601WKQ-7 [DIODES]

Small Signal Field-Effect Transistor,;
DMN601WKQ-7
型号： DMN601WKQ-7
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

Small Signal Field-Effect Transistor,
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中文：  中文翻译
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DMN601WKQ  
N-CHANNEL ENHANCEMENT MODE MOSFET  
Features  
Mechanical Data  
Low On-Resistance: RDS(ON)  
Case: SOT323  
Low Gate Threshold Voltage  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish – Matte Tin Annealed over Alloy 42  
Leadframe. Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
ESD Protected Gate  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
PPAP Capable (Note 4)  
Weight: 0.006 grams (Approximate)  
SOT323  
D ra in  
D
G a te  
G
S
G a te  
P ro te c tio n  
D io d e  
S o u rc e  
ESD PROTECTED  
Top View  
Top View  
Pin Out Configuration  
E Q U IV A L E N T C IR C U IT  
Ordering Information (Note 5)  
Part Number  
DMN601WKQ-7  
DMN601WKQ-13  
Case  
SOT323  
SOT323  
Packaging  
3,000/Tape & Reel  
10,000/Tape & Reel  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/.  
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
K7K = Product Type Marking Code  
YM = Date Code Marking  
Y = Year (ex: D = 2016)  
K7K  
M = Month (ex: 9 = September)  
Date Code Key  
Year  
2016  
2017  
2018  
2019  
2020  
2021  
2022  
2023  
2024  
Code  
D
E
F
G
H
I
J
K
L
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
1 of 7  
www.diodes.com  
January 2016  
© Diodes Incorporated  
DMN601WKQ  
Document number: DS38408 Rev. 1 - 2  
DMN601WKQ  
Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
Value  
60  
Units  
V
V
Gate-Source Voltage  
±20  
VGSS  
Continuous Pulsed  
300  
800  
Drain Current (Note 6)  
(Note 7)  
mA  
ID  
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Total Power Dissipation (Note 6)  
Symbol  
PD  
Value  
200  
Units  
mW  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
625  
RθJA  
-65 to +150  
TJ, TSTG  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
OFF CHARACTERISTICS (Note 8)  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Source Leakage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
60  
V
BVDSS  
IDSS  
1.0  
±10  
VGS = 0V, ID = 10µA  
µA  
µA  
VDS = 60V, VGS = 0V  
VGS = ±20V, VDS = 0V  
IGSS  
ON CHARACTERISTICS (Note 8)  
Gate Threshold Voltage  
1.0  
1.6  
2.5  
V
VGS(TH)  
RDS(ON)  
|YFS  
VDS = 10V, ID = 1mA  
VGS = 10V, ID = 0.5A  
VGS = 4.5V, ID = 0.2A  
VDS = 10V, ID = 0.2A  
  
  
  
  
2.0  
3.0  
Static Drain-Source On-Resistance  
Ω  
Forward Transfer Admittance  
DYNAMIC CHARACTERISTICS (Note 9)  
Input Capacitance  
80  
ms  
|
50  
25  
pF  
pF  
pF  
CISS  
COSS  
CRSS  
Output Capacitance  
VDS = 25V, VGS = 0V, f = 1.0MHz  
Reverse Transfer Capacitance  
5.0  
Notes:  
6. Device mounted on FR-4 PCB.  
7. Pulse width 10µS, Duty Cycle 1%.  
8. Short duration pulse test used to minimize self-heating effect.  
9. Guaranteed by design. Not subject to production testing.  
2 of 7  
www.diodes.com  
January 2016  
© Diodes Incorporated  
DMN601WKQ  
Document number: DS38408 Rev. 1 - 2  
DMN601WKQ  
1.0  
0.8  
0.6  
0.4  
0.2  
1
0.8  
0.6  
0.4  
0.2  
0
V
= 10V  
GS  
V
= 5.0V  
DS  
V
= 5V  
GS  
V
= 3.5V  
GS  
V
= 4.5V  
GS  
V
= 3.0V  
GS  
T = 85°C  
A
T
= 25°C  
A
T
= 125°C  
A
T
= -55°C  
A
T
= 150°C  
A
V
= 2.2V  
V
= 2.5V  
GS  
GS  
0.0  
2.2  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
0
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)  
Figure 1 Typical Output Characteristic  
VGS, GATE-SOURCE VOLTAGE (V)  
Figure 2 Typical Transfer Characteristics  
10  
2
8
6
4
2
0
V
= 4.5V  
GS  
1.8  
1.6  
1.4  
I
= 500mA  
D
V
= 10V  
GS  
1.2  
1
2
4
6
8
10  
12  
0
0.2  
0.4  
0.6  
0.8  
1
VGS, GATE-SOURCE VOLTAGE (V)  
Figure 4 Typical Drain-Source On-Resistance  
vs. Gate-Source Voltage  
ID, DRAIN-SOURCE CURRENT (A)  
Figure 3 Typical On-Resistance vs.  
Drain Current and Gate Voltage  
4
3
2
1
2
V
= 10V  
GS  
V
= 10V  
GS  
1.8  
1.6  
1.4  
1.2  
1
I
= 500mA  
D
T
= 150°C  
A
V
= 5V  
GS  
I
= 50mA  
D
T
= 125°C  
= 85°C  
A
T
A
T
= 25°C  
A
T
= -55°C  
A
0.8  
0.6  
0
0
0.2  
0.4  
0.6  
0.8  
1
-50 -25  
0
25  
TJ, JUNCTION TEMPERATURE (C)  
Figure 6 On-Resistance Variation with Temperature  
50  
75 100 125 150  
ID, DRAIN CURRENT (A)  
Figure 5 Typical On-Resistance vs.  
Drain Current and Temperature  
3 of 7  
www.diodes.com  
January 2016  
© Diodes Incorporated  
DMN601WKQ  
Document number: DS38408 Rev. 1 - 2  
DMN601WKQ  
3
2.2  
2
2.5  
I
= 1mA  
D
1.8  
1.6  
1.4  
1.2  
1
2
1.5  
1
I
= 250µA  
D
V
= 5V  
GS  
I
= 50mA  
D
V
= 10V  
GS  
I
= 500mA  
D
0.5  
-50 -25  
0
25  
50  
75 100 125 150  
-50 -25  
0
25  
50  
75 100 125 150  
TJ, JUNCTION TEMPERATURE (C)  
TJ, JUNCTION TEMPERATURE (C)  
Figure 7 On-Resistance Variation with Temperature  
Figure 8 Gate Threshold Variation vs. Ambient Temperature  
1
0.8  
0.6  
100  
f=1MHz  
C
iss  
T
= 150°C  
A
10  
T = 25°C  
A
T
= 125°C  
= 85°C  
A
0.4  
0.2  
0
T
= -55°C  
T
A
A
C
oss  
C
rss  
1
0
5
10  
15  
20  
25  
30  
35  
40  
0
0.3  
0.6  
0.9  
1.2  
1.5  
VSD, SOURCE-DRAIN VOLTAGE (V)  
VDS, DRAIN-SOURCE VOLTAGE (V)  
Figure 10 Typical Junction Capacitance  
Figure 9 Diode Forward Voltage vs. Current  
10  
R
DS(on)  
Limited  
P
= 100µs  
W
1
P
= 1ms  
W
DC  
P
0.1  
0.01  
= 10s  
W
P
= 1s  
W
P
= 100ms  
W
TJ(max) = 150°C  
TA = 25°C  
P
= 10ms  
W
VGS = 10V  
Single Pulse  
DUT on 1 * MRP Board  
0.001  
0.1  
10  
100  
1
VDS , DRAIN-SOURCE VOLTAGE (V)  
Figure 11 SOA, Safe Operation Area  
4 of 7  
www.diodes.com  
January 2016  
© Diodes Incorporated  
DMN601WKQ  
Document number: DS38408 Rev. 1 - 2  
DMN601WKQ  
1
D = 0.9  
D = 0.7  
D = 0.5  
D = 0.3  
0.1  
D = 0.1  
D = 0.05  
D = 0.02  
D = 0.01  
0.01  
D = 0.005  
RJA(t) = r(t) * RJA  
RJA = 408°C/W  
Duty Cycle, D = t1/ t2  
D = Single Pulse  
0.001  
0.000001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
t1, PULSE DURATION TIME (sec)  
Figure 12 Transient Thermal Resistance  
5 of 7  
www.diodes.com  
January 2016  
© Diodes Incorporated  
DMN601WKQ  
Document number: DS38408 Rev. 1 - 2  
DMN601WKQ  
Package Outline Dimensions  
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.  
SOT323  
D
A2  
SOT323  
Dim Min Max  
A1 0.00 0.10  
A2 0.90 1.00  
Typ  
0.05  
0.95  
0.30  
0.11  
2.15  
2.10  
1.30  
c
a
A1  
e
L
b
c
D
E
0.25 0.40  
0.10 0.18  
1.80 2.20  
2.00 2.20  
b
E1 1.15 1.35  
e
0.650 BSC  
e1 1.20 1.40  
1.30  
F
L
a
0.375 0.475 0.425  
0.25 0.40  
0.30  
E
E1  
8°  
All Dimensions in mm  
F
e1  
Suggested Pad Layout  
Please see AP02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version.  
SOT323  
X
Y
Value  
Dimensions  
(in mm)  
C
G
X
Y
Y1  
0.650  
1.300  
0.470  
0.600  
2.500  
Y1  
G
C
6 of 7  
www.diodes.com  
January 2016  
© Diodes Incorporated  
DMN601WKQ  
Document number: DS38408 Rev. 1 - 2  
DMN601WKQ  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2016, Diodes Incorporated  
www.diodes.com  
7 of 7  
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January 2016  
© Diodes Incorporated  
DMN601WKQ  
Document number: DS38408 Rev. 1 - 2  

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