DMN62D0LFD-7 [DIODES]
N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMN62D0LFD-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：333K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN62D0LFD
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
•
•
Low On-Resistance
ID
V(BR)DSS
RDS(ON)
TA = +25°C
Low Input Capacitance
Fast Switching Speed
310mA
295mA
2Ω @ VGS = 4V
60V
Low Input/Output Leakage
2.5Ω @ VGS = 2.5V
ESD Protected
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON) and yet maintain superior switching
)
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
•
•
Case: X1-DFN1212-3
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Applications
•
•
•
•
DC-DC Converters
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: NiPdAu over Copper leadframe. Solderable per MIL-
STD-202, Method 208 e4
Power management functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
•
•
Terminal Connections: See Diagram
Weight: 0.005 grams (approximate)
Drain
Body
Diode
G pin
S
Gate
D
G
Gate
Protection
Source
Diode
ESD PROTECTED
Bottom View
Top View
Pin-Out Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN62D0LFD-7
DMN62D0LFD-13
Compliance
Standard
Standard
Case
X1-DFN1212-3
X1-DFN1212-3
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
K63 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2013)
K63
YM
M = Month (ex: 9 = September)
Date Code Key
Year
2007
2008
2009
2010
2011
2012
2013
2014
2015
2016
2017
Code
U
V
W
X
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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May 2014
© Diodes Incorporated
DMN62D0LFD
Document number: DS36359 Rev. 2 - 2
DMN62D0LFD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
Unit
V
60
Gate-Source Voltage
±20
V
VGSS
TA = +25°C
TA = +70°C
310
260
mA
A
Continuous Drain Current (Note 5) VGS = 4.0V
ID
Pulsed Drain Current (Note 6) (10µs pulse, duty cycle = 1%)
1.0
IDM
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Symbol
PD
Max
0.48
Unit
W
265
°C/W
°C
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Operating and Storage Temperature Range
RθJA
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
—
—
60
—
—
—
—
—
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 60V, VGS = 0V
VGS = ±5V, VDS = 0V
1.0
μA
nA
nA
μA
Zero Gate Voltage Drain Current TJ = +25°C
±100
±500
±2.0
Gate-Source Leakage
IGSS
VGS = ±10V, VDS = 0V
GS = ±15V, VDS = 0V
V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.6
—
—
—
—
—
—
—
1.0
2
V
VGS(th)
VDS = VGS, ID = 250μA
VGS = 4V, ID = 100mA
VGS = 2.5V, ID = 50mA
VGS = 1.8V, ID = 50mA
1.3
1.4
1.8
2.4
1.8
0.8
2.5
3
Static Drain-Source On-Resistance
ꢀ
RDS(ON)
—
—
1.3
V
GS = 1.5V, ID = 10mA
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
S
V
|Yfs|
VSD
VDS = 10V, ID = 200mA
VGS = 0V, IS = 115mA
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
31
4.3
3.0
99
Ciss
Coss
Crss
Rg
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
ꢀ
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
0.5
0.09
0.07
2.6
2.1
18
Qg
V
GS = 4.5V, VDS = 10V,
Gate-Source Charge
Gate-Drain Charge
nC
Qgs
Qgd
tD(on)
tr
ID = 250mA
Turn-On Delay Time
ns
ns
ns
ns
VGS = 10V, VDS = 30V,
RL = 150ꢀ, RG = 25ꢀ,
ID = 200mA
Turn-On Rise Time
Turn-Off Delay Time
tD(off)
tf
Turn-Off Fall Time
8.7
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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© Diodes Incorporated
DMN62D0LFD
Document number: DS36359 Rev. 2 - 2
DMN62D0LFD
0.5
0.4
0.3
0.2
0.1
0.0
0.5
0.4
V
= 10V
GS
V
= 5.0V
DS
V
= 4.5V
GS
V
= 4.0V
GS
V
= 3.5V
GS
0.3
0.2
V
= 3.0V
GS
V
= 2.5V
GS
T
= 150°C
A
T
= 85°C
A
V
= 2.0V
GS
V
= 1.5V
GS
T
T
= 25°C
A
T
= 125°C
0.1
0
A
= -55°C
A
V
= 1.2V
GS
0
0.5
1.0
1.5
2.0
2.5
0
0.5
1.0
1.5
2.0
2.5
3.0
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
Figure 2 Typical Transfer Characteristics
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
3.0
2.5
2.0
1.5
1.0
0.5
0
V
= 4.5V
GS
T
= 150°C
A
V
= 2.5V
GS
T
= 125°C
A
T
= 85°C
= 25°C
V
= 4.5V
A
GS
T
A
V
= 10V
GS
T
= -55°C
A
0
0.1
0.2
0.3
0.4
0.5
0
0.1
0.2
0.3
0.4
0.5
ID, DRAIN-SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
2.4
2.0
1.6
1.2
0.8
0.4
3.0
2.5
2.0
V
= 2.5V
GS
I
= 100mA
D
V
= 4V
GS
I
= 200mA
D
V
= 4V
GS
I
= 200mA
D
1.5
1.0
V
I
= 2.5V
GS
= 100mA
D
0.5
0
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 5 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
°
C)
°
C)
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© Diodes Incorporated
DMN62D0LFD
Document number: DS36359 Rev. 2 - 2
DMN62D0LFD
1.2
1.0
0.8
0.6
0.4
0.5
0.4
0.3
0.2
0.1
0
I
= 1mA
D
T
= 25°C
A
I
= 250µA
D
-50 -25
0
25
50 75 100 125 150
C)
0
0.3
0.6
0.9
1.2
1.5
TJ, JUNCTION TEMPERATURE (
°
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
Figure 8 Diode Forward Voltage vs. Current
100
10
8
C
iss
V
I
= 10V
DS
6
4
= 250mA
D
10
C
oss
2
0
C
rss
f = 1MHz
1
0
10
20
30
40
0
0.2
0.4
0.6
0.8
1.0
1.2
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RθJA(t) = r(t) * RθJA
RθJA = 256°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
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May 2014
© Diodes Incorporated
DMN62D0LFD
Document number: DS36359 Rev. 2 - 2
DMN62D0LFD
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A3
U-DFN1212-3
Type C
A1
A
Dim Min Max Typ
Seati ng Pl ane
A
A1
A3
b
0.47 0.53 0.50
0
-
0.05 0.02
0.13
D
e
-
L
0.27 0.37 0.32
b1
b1 0.17 0.27 0.22
1.15 1.25 1.20
D2 0.75 0.95 0.85
D
e
E
-
-
0.80
E
1.15 1.25 1.20
E2
D2
L1
E2 0.40 0.60 0.50
0.25 0.35 0.30
L
L1 0.65 0.75 0.70
b
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
X2
U-DFN1212-3
Type C
Y1
X1
Dimensions
Value
0.800
0.200
0.320
0.520
1.050
0.450
0.250
0.850
C
G
X
X1
X2
Y
Y1
Y2
Y2
G
X
Y
All Dimensions in mm
C
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© Diodes Incorporated
DMN62D0LFD
Document number: DS36359 Rev. 2 - 2
DMN62D0LFD
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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© Diodes Incorporated
DMN62D0LFD
Document number: DS36359 Rev. 2 - 2
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