DMN63D8L-13 [DIODES]
N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMN63D8L-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：541K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN63D8L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
ID max
TA = +25°C
350mA
Low On-Resistance
V(BR)DSS
RDS(ON) max
Low Input Capacitance
2.8Ω @ VGS = 10V
3.8Ω @ VGS = 5V
Fast Switching Speed
30V
300mA
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Applications
Case: SOT23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Alloy 42
Motor Control
Power Management Functions
Backlighting
e3
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
D
SOT23
D
G
S
G
Gate Protection
Diode
S
ESD Protected Gate
Top View
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN63D8L-7
DMN63D8L-13
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
MX2 = Product Type Marking Code
YM or YM = Date Code Marking
Y or Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
Date Code Key
Year
2014
2015
2016
2017
2018
2019
2020
2021
2022
2023
2024
2025
Code
B
C
D
E
F
G
H
I
J
K
L
M
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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August 2015
© Diodes Incorporated
DMN63D8L
Document number: DS38026 Rev. 1 - 2
DMN63D8L
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Unit
V
Gate-Source Voltage
±20
V
VGSS
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
350
280
mA
ID
Continuous Drain Current (Note 6) VGS = 10V
400
310
t<5s
mA
A
ID
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 6)
1.2
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
350
Unit
mW
°C/W
mW
°C/W
°C
Total Power Dissipation (Note 5)
PD
RθJA
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
359
520
PD
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
243
RθJA
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol Min Typ
Max Unit
Test Condition
VGS = 0V, ID = 250A
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
30
V
BVDSS
IDSS
1.0
µA
µA
±10.0
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.8
80
1.5
2.8
3.8
4.2
4.5
13
V
VGS(TH)
0.8
VDS = VGS, ID = 250A
VGS = 10.0V, ID = 250mA
VGS = 5.0V, ID = 250mA
VGS = 4.5V, ID = 250mA
VGS = 4.0V, ID = 250mA
VGS = 2.5V, ID = 10mA
VDS = 10V, ID = 0.115A
VGS = 0V, IS = 115mA
Static Drain-Source On-Resistance
RDS(ON)
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
mS
V
gFS
1.2
VSD
23.2
3.0
Ciss
Coss
Crss
RG
Output Capacitance
pF
VDS = 25V, VGS = 0V, f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
2.2
79.9
0.9
Total Gate Charge VGS = 10V
Total Gate Charge VGS = 4.5V
Gate-Source Charge
Qg
0.4
Qg
VGS = 10V, VDS = 30V,
ID = 150mA
nC
0.1
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
0.2
Turn-On Delay Time
2.3
Turn-On Rise Time
3.9
VDD = 30V, ID = 0.115A, VGEN = 10V,
RGEN = 25
ns
Turn-Off Delay Time
11.4
16.7
tD(OFF)
tF
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 6
www.diodes.com
August 2015
© Diodes Incorporated
DMN63D8L
Document number: DS38026 Rev. 1 - 2
DMN63D8L
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.6
0.5
0.4
0.3
0.2
0.1
0
VDS= 5V
VGS=10V
150℃
125℃
-55℃
85℃
25℃
VGS=3.0V
VGS=4.0V
VGS=4.5V
VGS=5.0V
VGS=2.5V
VGS=2.0V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
1
2
3
4
5
6
7
8
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
10
10
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
VGS=4.5V
VGS=2.5V
VGS=4.0V
ID=250mA
VGS=10V
VGS=5.0V
0
2
4
6
8
10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
10
9
8
7
6
5
4
3
2
1
0
2.5
2
VGS= 4.5V
VGS=10V, ID=250mA
150℃
125℃
85℃
1.5
1
VGS=4.5V, ID=250mA
0.5
0
-55℃
25℃
-50 -25
0
25
50
75 100 125 150
0
0.1
0.2
0.3
0.4
0.5
0.6
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Junction Temperature
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
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August 2015
© Diodes Incorporated
DMN63D8L
Document number: DS38026 Rev. 1 - 2
DMN63D8L
6
5
4
3
2
1
0
2
1.8
1.6
1.4
1.2
1
ID=1mA
VGS=4.5V, ID=250mA
ID=250μA
0.8
0.6
0.4
0.2
0
VGS=10V, ID=250mA
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
100
10
1
f=1MHz
Ciss
VGS=0V, TJ=125℃
VGS=0V,
VGS=0V, TJ=150℃
TJ=85℃
VGS=0V,
TJ=25℃
Coss
VGS=0V,
TJ=-55℃
Crss
0
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
25
30
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
1
10
8
PW=100µs
RDS(ON) LIMITED
PW=1ms
0.1
PW=10ms
PW=100ms
PW=1s
PW=10s
DC
6
VDS=30V, ID=150mA
4
0.01
0.001
TJMax)=150℃
TA=25℃
2
Single Pulse
DUT on 1*MRP board
VGS=4.5V
0
0.1
1
10
100
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Qg (nC)
1
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
4 of 6
www.diodes.com
August 2015
© Diodes Incorporated
DMN63D8L
Document number: DS38026 Rev. 1 - 2
DMN63D8L
1
D=0.9
D=0.7
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.02
D=0.01
0.01
D=0.005
RθJA(t)=r(t) * RθJA
RθJA=357°C/W
Duty Cycle, D=t1 / t2
D=Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
All 7°
SOT23
H
Dim
A
B
C
D
F
G
H
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
GAUGE PLANE
0.25
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.40
1.30
2.40
J
K
K1
a
M
A
2.05
3.00
1.83
2.90
0.05
L
L1
J
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
8°
All Dimensions in mm
D
G
F
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August 2015
© Diodes Incorporated
DMN63D8L
Document number: DS38026 Rev. 1 - 2
DMN63D8L
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Dimensions Value (in mm)
Z
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
C
E
X
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
DMN63D8L
Document number: DS38026 Rev. 1 - 2
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