DMN63D8LV [DIODES]

Dual N-Channel MOSFET;


型号：	DMN63D8LV
厂家：	DIODES INCORPORATED
描述：	Dual N-Channel MOSFET
文件：	总6页 (文件大小：172K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DMN63D8LV

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features

•

Dual N-Channel MOSFET

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Small Surface Mount Package

ESD Protected Gate

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

I_D

V_(BR)DSS

R_DS(ON)

T_A= 25°C

200mA

260mA

4.2Ω @ V_GS= 5V

2.8Ω @ V_GS= 10V

30V

Description

This new generation MOSFET has been designed to minimize the

on-state resistance (R_DS(on)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

Mechanical Data

•

Case: SOT563

Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

Applications

•

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Weight: 0.006 grams (approximate)

•

DC-DC Converters

Power management functions

Battery Operated Systems and Solid-State Relays

Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc

•

D₂

G₁

S₁

SOT563

S₂

G₂

D₁

Top View

Internal Schematic

ESD PROTECTED

Ordering Information (Note 4)

Part Number

DMN63D8LV-7

DMN63D8LV-13

Case

SOT563

Packaging

3,000/Tape & Reel

10,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

3D8 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Z = 2012)

M = Month (ex: 9 = September)

Date Code Key

Year

2011

2012

2013

2014

2015

2016

2017

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

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www.diodes.com

August 2012

DMN63D8LV

Document number: DS36022 Rev. 2 - 2

DMN63D8LV

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

V_DSS

Value

Units

Drain-Source Voltage

Gate-Source Voltage

Steady

±20

V_GSS

_A= 25°C

_A= 70°C

260

200

Continuous Drain Current (Note 5)

V_GS=10V

I_D

State

Steady

State

T_A= 25°C

T_A= 70°C

220

160

Continuous Drain Current (Note 5)

V_GS= 5V

I_D

800

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

I_DM

Thermal Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

450

Units

°C/W

°C

Total Power Dissipation

(Note 5)

P_D

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

281

R_θ

-55 to 150

T_J,T_STG

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 6)

Symbol Min

Typ

Max Unit

Test Condition

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

⎯

BV_DSS

I_DSS

⎯

1.0

V_GS= 0V, I_D= 250μA

V_DS= 30V, V_GS= 0V

µA

±10.0

I_GSS

μA V_GS= ±20V, V_DS= 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

0.8

⎯

1.5

2.8

3.8

4.2

4.5

V_GS(th)

⎯

0.8

V_DS= V_GS, I_D= 250μA

_GS= 10.0V, I_D= 250mA

V_GS= 5.0V, I_D= 250mA

V_GS= 4.5V, I_D= 250mA

V_GS= 4.0V, I_D= 250mA

V_GS= 2.5V, I_D= 10mA

V_DS= 10V, I_D= 0.115A

V_GS= 0V, I_S= 115mA

Static Drain-Source On-Resistance

R_{DS (ON)}

Forward Transconductance

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

g_FS

⎯

1.2

V_SD

22.0

3.2

C_iss

C_oss

C_rss

R_G

⎯

Output Capacitance

_DS= 25V, V_GS= 0V, f = 1.0MHz

Reverse Transfer Capacitance

Gate Resistance

2.0

79.9

0.87

0.43

0.11

3.3

V_DS= 0V, V_GS= 0V, f = 1.0MHz

Total Gate Charge V_GS= 10V

Total Gate Charge V_GS= 4.5V

Gate-Source Charge

Q_g

V_GS= 10V, V_DS= 30V,

_D= 150mA

Q_gs

Q_gd

t_D(on)

t_r

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

3.2

V_DD= 30V, I_D= 0.115A, V_GEN= 10V_,

R_GEN= 25Ω

Turn-Off Delay Time

12.0

6.3

t_D(off)

t_f

Turn-Off Fall Time

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6 .Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

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August 2012

DMN63D8LV

Document number: DS36022 Rev. 2 - 2

DMN63D8LV

0.8

0.7

0.6

0.5

0.4

= 10.0V

= 5.0V

= 4.5V

0.6

0.5

0.4

0.3

0.2

= 4.0V

= 3.0V

0.3

0.2

= 150°C

= 125°C

= 2.5V

= 85°C

0.1

= 25°C

0.1

= 2.0V

= -55°C

V_GS, GATE-SOURCE VOLTAGE (V)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 2 Typical Transfer Characteristics

Figure 1 Typical Output Characteristic

5.0

4.5

4.0

3.5

3.0

2.5

2.0

= 2.5V

= 4.5V

= 10V

= 250mA

= 100mA

= 10mA

1.5

1.0

0.1 0.2 0.3

0.4 0.5 0.6 0.7 0.8

I_D, DRAIN-SOURCE CURRENT (A)

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

Figure 4 Typical Drain-Source On-Resistance

vs. Gate-Source Voltage

1.6

1.4

= 5.0V

= 300mA

= 4.5V

= 4.0V

= 200mA

= 150°C

1.2

1.0

= 125°C

= 85°C

= 25°C

0.8

0.6

= -55°C

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

I_D, DRAIN CURRENT (A)

-50 -25

T_J, JUNCTION TEMPERATURE (

Figure 6 On-Resistance Variation with Temperature

25 50

75 100 125 150

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

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August 2012

DMN63D8LV

Document number: DS36022 Rev. 2 - 2

DMN63D8LV

2.0

1.8

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.6

1.4

1.2

1.0

= 1mA

= 250µA

= 4.0V

= 200mA

0.8

0.6

1.5

1.0

= 5.0V

= 300mA

-50 -25

T_J, JUNCTION TEMPERATURE (

Figure 8 Gate Threshold Variation vs. Ambient Temperature

50 75 100 125 150

-50 -25

75 100 125 150

Figure 7 On-Resistance Variation with Temperature

T_J, JUNCTION TEMPERATURE (

0.8

0.7

0.6

0.5

0.4

0.3

0.2

= 150°C

= 125°C

= 85°C

= 25°C

= -55°C

0.1

0.3

0.6

0.9

1.2

1.5

V_SD, SOURCE-DRAIN VOLTAGE (V)

Figure 9 Diode Forward Voltage vs. Current

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August 2012

DMN63D8LV

Document number: DS36022 Rev. 2 - 2

DMN63D8LV

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

SOT563

Dim Min Max

Typ

0.15 0.30 0.20

1.10 1.25 1.20

1.55 1.70 1.60

0.50

0.90 1.10 1.00

1.50 1.70 1.60

0.55 0.60 0.60

0.10 0.30 0.20

0.10 0.18 0.11

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Dimensions Value (in mm)

2.2

1.2

0.375

0.5

1.7

0.5

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August 2012

DMN63D8LV

Document number: DS36022 Rev. 2 - 2

DMN63D8LV

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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August 2012

DMN63D8LV

Document number: DS36022 Rev. 2 - 2

DMN63D8LV [DIODES]

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