DMN65D8LDW [DIODES]
Dual N-Channel MOSFET;
| 型号： | DMN65D8LDW |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Dual N-Channel MOSFET |
| 文件： | 总6页 (文件大小：535K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN65D8LDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Dual N-Channel MOSFET
ID
V(BR)DSS
RDS(ON)
Package
TA = +25°C
170mA
200mA
Low On-Resistance
8Ω @ VGS = 5V
6Ω @ VGS = 10V
Low Gate Threshold Voltage
60V
SOT363
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Description
ESD Protected Gate, 1KV (HBM)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON) and yet maintain superior switching
)
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Applications
Case: SOT363
DC-DC Converters
Case Material: Molded Plastic; UL Flammability Classification
Rating 94V-0
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208
e3
Lead Free Plating (Matte Tin Finish Annealed over Alloy 42
Leadframe).
Terminal Connections: See Diagram
Weight: 0.006 grams (Approximate)
D2
G1
S1
SOT363
S2
G2
D1
ESD PROTECTED TO 1kV
Top View
Internal Schematic
Top View
Ordering Information (Note 4)
Part Number
DMN65D8LDW-7
Case
SOT363
Packaging
3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
MM1= Product Type Marking Code
MM1 YM
M Y 1 M M
MM1 YM
M Y 1 M M
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
2007
2008
2009
2010
2011
2012
2013
2014
2015
2016
2017
2018
Code
U
V
W
X
Y
Z
A
B
C
D
E
F
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMN65D8LDW
Document number: DS35500 Rev. 8 - 2
DMN65D8LDW
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
Value
Units
Drain-Source Voltage
Gate-Source Voltage
Steady
60
V
V
±20
VGSS
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
180
140
mA
mA
mA
Continuous Drain Current (Note 5)
Continuous Drain Current (Note 5)
Continuous Drain Current (Note 6)
Continuous Drain Current (Note 6)
VGS = 10V
VGS = 5V
VGS = 10V
VGS = 5V
ID
ID
ID
State
Steady
State
150
120
Steady
State
200
160
Steady
State
170
140
mA
mA
ID
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
800
IDM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
PD
Value
Units
300
435
mW
°C/W
mW
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
RθJA
400
PD
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
330
°C/W
°C/W
°C
RθJA
139
RθJC
TJ, TSTG
-55 to +150
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
VGS = 0V, ID = 250µA
60
V
BVDSS
IDSS
1.0
5.0
TJ = +25°C
µA
µA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
TJ = +125°C (Note 8)
Gate-Body Leakage
±5.0
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1.0
2.0
8
V
Ω
VGS(th)
VDS = VGS, ID = 250µA
VGS = 5.0V, ID = 0.115A
VGS = 10.0V, ID = 0.115A
VDS = 10V, ID = 0.115A
VGS = 0V, IS = 115mA
Static Drain-Source On-Resistance
RDS (ON)
6
Ω
mS
V
80
—
Forward Transconductance
Diode Forward Voltage
gFS
0.8
1.2
VSD
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
22.0
3.2
Ciss
Coss
Crss
RG
Output Capacitance
pF
VDS = 25V, VGS = 0V, f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
2.0
79.9
0.87
0.43
0.11
0.11
3.3
Ω
Total Gate Charge VGS = 10V
Total Gate Charge VGS = 4.5V
Gate-Source Charge
Qg
Qg
VGS = 10V, VDS = 30V,
ID = 150mA
nC
nS
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
3.2
VDD = 30V, ID = 0.115A, VGEN = 10V,
RGEN = 25Ω
Turn-Off Delay Time
12.0
6.3
tD(off)
tf
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
2 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMN65D8LDW
Document number: DS35500 Rev. 8 - 2
DMN65D8LDW
1
0.6
0.5
0.4
V
= 5.0V
DS
0.1
0.3
0.2
T
= 150°C
A
T
= 125°C
A
T
= 85°C
A
T
= 25°C
A
0.1
0
T
= -55°C
A
0.01
0
1
2
3
4
5
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS, GATE-SOURCE VOLTAGE
Fig.2 Typical Transfer Characteristics
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig.1 Typical Output Characteristic
5.0
4.5
2.4
2.2
2.0
4.0
V
= 10V
GS
= 115mA
I
D
3.5
3.0
2.5
1.8
1.6
1.4
1.2
V
= 5V
GS
V
= 5V
GS
= 115mA
I
D
V
= 10V
2.0
1.5
1.0
GS
1.0
0.8
0.5
0
0.6
0.4
0
0.1
0.2
0.3
0.4
0.5
0.6
50 -25
0
25
50
75 100 125 150
ID, DRAIN CURRENT
TJ, JUNCTION TEMPERATURE (C)
Fig. 3 Typical On-Resistance vs.
Drain Current and Temperature
Fig. 4 On-Resistance Variation with Temperature
5
4
2.0
1.8
1.6
1.4
1.2
I
= 1mA
D
V
= 5V
GS
= 115mA
3
2
I
= 250µA
I
D
D
1.0
0.8
0.6
0.4
V
= 10V
= 115mA
GS
I
D
1
0
0.2
0
-50 -25
TJ, JUNCTION TEMPERATURE (C)
Fig. 6 Gate Threshold Variation vs. Ambient Temperature
0
25
50 75 100 125 150
- 50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 5 On-Resistance Variation with Temperature
3 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMN65D8LDW
Document number: DS35500 Rev. 8 - 2
DMN65D8LDW
1,000
100
1
0.1
T
= 150°C
A
T
= 150°C
A
T
= 85°C
T
= 125°C
A
A
T
= 125°C
A
T
= 25°C
10
0.01
A
T
= 85°C
A
T
= -55°C
T
= 25°C
A
T
= -55°C
A
A
1
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
VSD, SOURCE-DRAIN VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 7 Diode Forward Voltage vs. Current
Fig. 8 Typical Drain-Source Leakage Current vs. Voltage
50
45
f = 1MHz
40
35
30
25
20
15
C
iss
10
C
oss
5
0
C
rss
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.9
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
R
R
= r * R
(t)
= 318C/W
JA(t)
JA
JA
D = 0.005
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (sec)
Fig. 10 Transient Thermal Resistance
4 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMN65D8LDW
Document number: DS35500 Rev. 8 - 2
DMN65D8LDW
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A
SOT363
Dim Min Max Typ
A
B
C
D
F
H
J
K
L
0.10 0.30 0.25
1.15 1.35 1.30
2.00 2.20 2.10
0.65 Typ
0.40 0.45 0.425
1.80 2.20 2.15
B C
H
0
0.10 0.05
K
M
0.90 1.00 1.00
0.25 0.40 0.30
0.10 0.22 0.11
J
M
L
D
F
0°
8°
-
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C2
C2
Dimensions Value (in mm)
Z
G
2.5
1.3
X
Y
C1
C2
0.42
0.6
1.9
C1
G
Y
Z
0.65
X
5 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMN65D8LDW
Document number: DS35500 Rev. 8 - 2
DMN65D8LDW
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
6 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMN65D8LDW
Document number: DS35500 Rev. 8 - 2
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明