DMN65D8L [DIODES]
N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMN65D8L |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN65D8L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
•
•
•
•
•
•
•
•
•
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ID
V(BR)DSS
RDS(ON)
Package
TA = +25°C
310mA
270mA
3Ω @ VGS = 10V
4Ω @ VGS = 5V
60V
SOT23
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on) and yet maintain superior switching
)
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
•
•
Case: SOT23
Applications
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
•
•
•
•
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc
•
•
•
e3
•
•
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
Drain
SOT23
D
Gate
Gate
Protection
Diode
S
G
ESD PROTECTED TO 1kV
Top View
Source
Top View
Pin Configuration
Equivalent Circuit
Ordering Information (Note 4)
Part Number
Case
Packaging
DMN65D8L-7
SOT23
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
MM6 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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August 2012
© Diodes Incorporated
DMN65D8L
Document number: DS35923 Rev. 2 - 2
DMN65D8L
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
60
Units
V
V
Gate-Source Voltage
±20
VGSS
T
A = +25°C
Steady
State
310
240
mA
mA
Continuous Drain Current (Note 6) VGS = 10V
Continuous Drain Current (Note 6) VGS = 5V
ID
TA = +70°C
T
T
A = +25°C
A = +70°C
Steady
State
270
210
ID
IDM
IS
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current (Note 5)
800
500
mA
mA
Thermal Characteristics
Characteristic
Symbol
PD
Value
Units
(Note 6)
(Note 5)
(Note 6)
(Note 5)
(Note 5)
370
540
348
241
91
Total Power Dissipation
mW
Thermal Resistance, Junction to Ambient
Rθ
JA
°C/W
°C
Thermal Resistance, Junction to Case
Rθ
JC
Operating and Storage Temperature Range
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
60
⎯
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
1.0
±5
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
µA
µA
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1.2
⎯
⎯
2.0
3
V
Ω
Ω
VGS(th)
⎯
2
VDS = VGS, ID = 250µA
V
GS = 10V, ID = 0.115A
Static Drain-Source On-Resistance
RDS (ON)
2.5
290
0.8
4
VGS = 5V, ID = 0.115A
VDS = 10V, ID = 0.115A
VGS = 0V, IS = 115mA
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
80
mS
gFS
⎯
1.2
V
VSD
⎯
22.0
3.2
Ciss
Coss
Crss
RG
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Output Capacitance
pF
VDS = 25V, VGS = 0V, f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
2.0
79.9
0.87
0.43
0.11
0.11
2.7
Ω
Total Gate Charge VGS = 10V
Total Gate Charge VGS = 4.5V
Gate-Source Charge
Qg
Qg
V
GS = 10V, VDS = 30V,
nC
I
D = 150mA
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
2.8
V
DD = 30V, ID = 0.115A, VGEN = 10V,
nS
Turn-Off Delay Time
12.6
7.3
RGEN = 25Ω
tD(off)
tf
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing
.
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August 2012
© Diodes Incorporated
DMN65D8L
Document number: DS35923 Rev. 2 - 2
DMN65D8L
1
0.6
0.5
0.4
V
= 5.0V
DS
0.1
0.3
0.2
T
= 150°C
A
T
= 125°C
A
T
= 85°C
A
T
= 25°C
A
0.1
0
T
= -55°C
A
0.01
0
1
2
3
4
5
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS, GATE-SOURCE VOLTAGE
Figure 2. Typical Transfer Characteristics
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
5.0
4.5
2.4
2.2
2.0
4.0
3.5
3.0
2.5
V
= 10V
GS
I
= 115mA
D
1.8
1.6
1.4
1.2
1.0
0.8
V
= 5V
GS
V
= 5V
GS
I
= 115mA
D
V
= 10V
2.0
1.5
1.0
GS
0.5
0
0.6
0.4
0
0.1
0.2
0.3
0.4
0.5
0.6
50 -25
TJ, JUNCTION TEMPERATURE (
Figure 4. On-Resistance Variation with Temperature
0
25
50
75 100 125 150
°
C)
ID, DRAIN CURRENT
Figure 3. Typical On-Resistance vs.
Drain Current and Temperature
5
4
2.0
1.8
1.6
1.4
1.2
I
= 1mA
D
V
= 5V
GS
3
2
I
= 250µA
I
= 115mA
D
D
1.0
0.8
0.6
0.4
V
= 10V
GS
I
= 115mA
D
1
0
0.2
0
- 50 -25
0
25
50
75 100 125 150
C)
Figure 5. On-Resistance Variation with Temperature
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 6. Gate Threshold Variation vs. Ambient Temperature
0
25
50 75 100 125 150
°
C)
TJ, JUNCTION TEMPERATURE (
°
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© Diodes Incorporated
DMN65D8L
Document number: DS35923 Rev. 2 - 2
DMN65D8L
1,000
100
1
0.1
T
= 150°C
A
T
= 150°C
A
T
= 85°C
T
= 125°C
A
A
T
= 125°C
A
T
= 25°C
10
1
0.01
A
T
= 85°C
A
T
= -55°C
T
= 25°C
A
T
= -55°C
A
A
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
VSD, SOURCE-DRAIN VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 7. Diode Forward Voltage vs. Current
Figure 8. Typical Drain-Source Leakage Current vs. Voltage
50
45
f = 1MHz
40
35
30
25
20
15
C
iss
10
C
oss
5
0
C
rss
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Typical Junction Capacitance
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© Diodes Incorporated
DMN65D8L
Document number: DS35923 Rev. 2 - 2
DMN65D8L
Package Outline Dimensions
SOT23
A
Dim
A
B
C
D
F
G
H
J
K
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013 0.10
0.903 1.10
-
C
B
2.05
3.00
1.83
2.90
0.05
1.00
0.400
0.55
0.11
-
H
M
K
K1
K1
L
M
-
D
0.45
0.085 0.18
0° 8°
0.61
F
J
L
G
α
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value (in mm)
Z
X
Y
C
E
2.9
0.8
0.9
2.0
Z
C
1.35
E
X
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© Diodes Incorporated
DMN65D8L
Document number: DS35923 Rev. 2 - 2
DMN65D8L
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
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© Diodes Incorporated
DMN65D8L
Document number: DS35923 Rev. 2 - 2
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