DMP1022UFDF-7 [DIODES]
Small Signal Field-Effect Transistor, 9.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, U-DFN2020-6, 6 PIN;
| 型号： | DMP1022UFDF-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 9.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, U-DFN2020-6, 6 PIN 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：425K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP1022UFDF
12V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
0.6mm profile – ideal for low profile applications
PCB footprint of 4mm2
ID max
V(BR)DSS
RDS(ON) max
TA = +25°C
Low Gate Threshold Voltage
-9.5A
-8.5A
-7.2A
-6.6A
14.8mΩ @ VGS = -4.5V
19mΩ @ VGS = -2.5V
26mΩ @ VGS = -1.8V
32mΩ @ VGS = -1.5V
Fast Switching Speed
-12V
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
Mechanical Data
This MOSFET is designed specifically for use in battery management
applications.
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe.
e4
Solderable per MIL-STD-202, Method 208
Weight: 0.0065 grams (Approximate)
D
U-DFN2020-6
G
ESD PROTECTED
Gate Protection
Diode
S
Pin Out
Internal Schematic
Top View
Bottom View
Bottom View
Ordering Information (Note 4)
Part Number
DMP1022UFDF-7
DMP1022UFDF-13
Case
U-DFN2020-6
U-DFN2020-6
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
PU = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
PU
M = Month (ex: 9 = September)
Date Code Key
Year
2013
2014
2015
2016
2017
2018
2019
2020
2021
2022
Code
A
B
C
D
E
F
G
H
I
J
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMP1022UFDF
Datasheet number: DS36624 Rev. 5 - 2
DMP1022UFDF
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-12
Units
V
V
Gate-Source Voltage
±8
VGSS
Steady
State
TA = +25°C
-9.5
-7.6
A
ID
TA = +70°C
TA = +25°C
TA = +70°C
Continuous Drain Current (Note 6) VGS = -4.5V
-11.0
-8.8
t<5s
A
A
A
A
ID
IDM
IS
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
-90
TA = +25°C
TC = +25°C
-2.5
-7.1
Continuous Source-Drain Diode Current
Pulsed Source-Drain Diode Current (10μs pulse, duty cycle = 1%)
-50
ISM
Thermal Characteristics
Characteristic
Symbol
Value
0.73
Units
TA = +25°C
Total Power Dissipation (Note 5)
W
PD
RθJA
PD
0.47
172
128
TA = +70°C
Steady state
t<5s
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
2.1
TA = +25°C
TA = +70°C
Steady state
t<5s
1.3
59
45
5.1
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Steady state
RθJC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-12
—
—
—
—
—
—
-200
-2
V
BVDSS
IDSS
VGS = 0V, ID = -250μA
VDS = -12V, VGS = 0V
VDS = -12V, VGS = 0V
VGS = ±8V, VDS = 0V
nA
µA
µA
Zero Gate Voltage Drain Current TJ = +25°C
Zero Gate Voltage Drain Current TJ = +55°C (Note 8)
Gate-Source Leakage
—
IDSS
—
±10
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.35
—
—
12
-0.8
14.8
19
V
mΩ
V
VGS(th)
RDS(ON)
VSD
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -4A
VGS = -2.5V, ID = -4A
VGS = -1.8V, ID = -4A
VGS = -1.5V, ID = -2A
VGS = 0V, IS = -8A
15
Static Drain-Source On-Resistance
20
26
23
32
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
-0.8
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
2,712
514
467
8.6
—
—
—
18
—
—
—
—
—
—
—
—
Ciss
Coss
Crss
Rg
VDS = -10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
pF
Ω
VDS = 0V, VGS = 0V, f = 1MHz
VGS = -8V, VDS = -6V, ID = -10A
48.3
28.6
4.2
Total Gate Charge
Qg
Total Gate Charge
Qg
nC
ns
VGS = -4.5V, VDS = -6V,
ID = -10A
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
tD(on)
tr
7.0
25.1
39.8
141
147
Turn-On Delay Time
Turn-On Rise Time
VDS = -6V, VGS = -4.5V,
RG = 1Ω, ID = -8A
Turn-Off Delay Time
Turn-Off Fall Time
tD(off)
tf
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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October 2015
© Diodes Incorporated
DMP1022UFDF
Datasheet number: DS36624 Rev. 5 - 2
DMP1022UFDF
20
16
12
8
30
25
20
15
10
5
V
= -5.0V
DS
V
= -8.0V
GS
= -4.5V
V
GS
= -2.5V
V
GS
V
= -2.0V
GS
= -1.8V
V
GS
V
= -1.5V
GS
T
= 150C
A
T
A
= 125C
T
= 85C
A
T
= 25C
A
4
T
= -55C
A
V
= -1.2V
GS
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.5
1
1.5
2
2.5
3
-VGS, GATE-SOURCE VOLTAGE (V)
-VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
Figure 1 Typical Output Characteristics
0.06
0.05
0.04
0.03
0.02
0.01
0
0.03
0.025
0.02
0.015
0.01
0.005
0
V
= -4.5V
GS
V
= -1.5V
GS
T
= 150C
= 125C
A
T
A
T
= 85C
A
V
= -1.8V
GS
T
= 25C
A
T
= -55C
A
V
= -2.5V
GS
V
= -4.5V
GS
0
4
8
12
16
20
0
5
10
15
20
25
30
-ID, DRAIN SOURCE CURRENT (A)
-ID, DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.7
0.04
0.03
0.02
0.01
0
1.5
1.3
1.1
0.9
0.7
0.5
V
I
= -2.5V
GS
= -5A
D
V
I
= -2.5V
GS
= -5A
D
V
I
= -4.5V
GS
= -10A
D
V
I
= -4.5V
GS
= -10A
D
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 5 On-Resistance Variation with Temperature
Figure 6 On-Resistance Variation with Temperature
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© Diodes Incorporated
DMP1022UFDF
Datasheet number: DS36624 Rev. 5 - 2
DMP1022UFDF
1.4
1.2
1
20
16
12
8
0.8
0.6
0.4
0.2
0
T = 25C
A
-I = 1mA
D
-I = 250µA
D
4
0
0.4
0.6
0.8
1
1.2
-50 -25
0
25
50
75
100 125 150
-VSD, SOURCE-DRAIN VOLTAGE (V)
TA, AMBIENT TEMPERATURE (°C)
Figure 8 Diode Forward Voltage vs. Current
Figure 7 Gate Threshold Variation vs. Ambient Temperature
4000
8
6
4
2
0
f = 1MHz
3500
3000
C
iss
2500
2000
1500
1000
V
I
= -6V
DS
= -10A
D
C
oss
500
C
rss
0
0
5
10 15 20 25 30 35 40 45 50
Qg, TOTAL GATE CHARGE (nC)
0
3
6
9
12
15
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
Figure 10 Gate-Charge Characteristics
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RJA(t) = r(t) * RJA
RJA = 172°C/W
Single Pulse
Duty Cycle, D = t1/ t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIMES (sec)
Figure 11 Transient Thermal Resistance
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October 2015
© Diodes Incorporated
DMP1022UFDF
Datasheet number: DS36624 Rev. 5 - 2
DMP1022UFDF
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
U-DFN2020-6
(Type F)
A3
A1
A
Dim
A
A1
A3
b
Min Max
0.57 0.63
0.00 0.05
Typ
0.60
0.03
0.15
0.30
2.00
0.95
0.38
2.00
1.15
0.70
Seating Plane
-
-
D
0.25 0.35
1.95 2.05
0.85 1.05
D
D2
e3
k2
e4
D2a 0.33 0.43
E
E2
E2a
e
e2
e3
e4
k
1.95 2.05
1.05 1.25
0.65 0.75
D2a
E2a
z2
0.65 BSC
0.863 BSC
0.70 BSC
0.325 BSC
0.37 BSC
0.15 BSC
D2
E
E2
k1
e2
k1
k2
L
L
k
z1
0.36 BSC
0.225 0.325 0.275
0.20 BSC
z
z1
z2
0.110 BSC
0.20 BSC
e
b
z( 4x)
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X3
Y
C
X
Value
Dimensions
(in mm)
0.650
0.400
0.480
0.950
1.700
0.425
0.800
1.150
1.450
2.300
C
X
X1
X2
X3
Y
Y1
Y2
Y3
Y4
Y3
Y2
Y1 Y4
X1
Pin1
X2
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© Diodes Incorporated
DMP1022UFDF
Datasheet number: DS36624 Rev. 5 - 2
DMP1022UFDF
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
DMP1022UFDF
Datasheet number: DS36624 Rev. 5 - 2
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