DMP2035UVTQ-13 [DIODES]
Power Field-Effect Transistor,;
| 型号： | DMP2035UVTQ-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Field-Effect Transistor, 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：470K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP2035UVTQ
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low Input Capacitance
ID
TA = +25°C
-6.0A
V(BR)DSS
RDS(on) max
Low On-Resistance
35mΩ @ VGS = -4.5V
45mΩ @ VGS = -2.5V
Fast Switching Speed
-20V
-5.2A
ESD protected Up To 3KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Mechanical Data
Applications
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (Approximate)
Drain
DC-DC Converters
Motor Control
Power management functions
Analog Switch
TSOT26
D
D
G
1
2
3
6
5
4
D
D
S
Gate
Gate
Protection
Diode
Source
ESD PROTECTED TO 3kV
Top View
Pin-Out
Top View
Equivalent Circuit
Ordering Information (Note 5)
Part Number
DMP2035UVTQ-7
DMP2035UVTQ-13
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q10x qualified and are PPAP capable. Automotive, AEC-Q10x and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
20P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
20P
M = Month (ex: 9 = September)
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMP2035UVTQ
Document number: DS37400 Rev. 2 - 2
DMP2035UVTQ
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-20
Units
V
V
Gate-Source Voltage
±12
VGSS
Steady
State
TA = +25°C
-6.0
-4.8
A
A
A
A
ID
ID
ID
ID
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Continuous Drain Current (Note 7) VGS = -4.5V
Continuous Drain Current (Note 7) VGS = -2.5V
-7.2
-5.7
t<10s
Steady
State
-5.2
-4.1
-6.2
-4.9
t<10s
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
-2.0
-24
A
A
IS
IDM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 6)
1.2
106
74
2.0
65
W
PD
RθJA
PD
Steady State
Thermal Resistance, Junction to Ambient (Note 6)
t<10s
Total Power Dissipation (Note 7)
°C/W
W
Steady State
Thermal Resistance, Junction to Ambient (Note 7)
RθJA
t<10s
46
°C/W
Steady State
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
11.8
RθJC
-55 to 150
°C
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
V
-1
BVDSS
IDSS
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = 8V, VDS = 0V
µA
µA
10
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-0.4
-0.7
2.5
-1.5
V
VGS(th)
VDS = VGS, ID = -250µA
ID = -250µA , Referenced to
+25°C
Gate Threshold Voltage Temperature Coefficient
mV/°C
△
VGS(th)
/
△
TJ
23
30
35
45
VGS = -4.5V, ID = -4.0A
VGS = -2.5V, ID = -4.0A
VGS = -1.8V, ID = -2.0A
VDS = -5V, ID = -5.5A
VGS = 0V, IS = -1A
Static Drain-Source On-Resistance
mΩ
RDS(ON)
41
62
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
18
S
V
-1.0
|Yfs|
VSD
-0.7
1610
157
145
9.4
15.4
2.5
3.3
17
2400
210
200
14.1
23.1
Ciss
Coss
Crss
RG
VDS = -10V, VGS = 0V
f = 1.0MHz
Output Capacitance
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge
Qg
VDS = -10V, VGS = -4.5V
ID = -4A
Gate-Source Charge
nC
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
33
Turn-On Delay Time
Turn-On Rise Time
12
19
VGS = -4.5V, VDS = -10V, RG = 6Ω,
ID = -1A, RL = 10Ω
ns
Turn-Off Delay Time
94
150
64
tD(off)
tf
Turn-Off Fall Time
42
Reverse Recovery Time
Reverse Recovery Charge
14
25
ns
trr
IF =-4.5A, di/dt=100A/µS
4
8
nC
Qrr
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMP2035UVTQ
Document number: DS37400 Rev. 2 - 2
DMP2035UVTQ
20
15
25
20
V
= 8.0V
GS
V
= -5.0V
V
= 4.5V
DS
GS
V
= 3.5V
GS
V
= 2.0V
GS
V
= 3.2V
GS
15
10
V
= 3.0V
GS
10
V
= 2.5V
GS
T
= 150C
A
5
0
5
0
V
= 1.5V
T
= 125C
T
= 85C
GS
A
A
T
= 25C
A
T
= -55C
A
0
1
2
3
4
5
0
0.5
1.0
1.5
2.0
2.5
3.0
-VDS, DRAIN -SOURCE VOLTAGE(V)
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
Fig. 2 Typical Transfer Characteristics
0.07
0.06
0.05
0.04
V
= -4.5V
GS
T
T
= 150C
A
= 125C
= 85C
A
0.05
0.04
T
A
0.03
T
= 25C
A
0.02
0.01
T
= -55C
A
0.03
0.02
0
4
8
12
16
20
0.1
1
10
100
-ID, DRAIN SOURCE CURRENT (A)
-ID, DRAIN SOURCE CURRENT
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.06
0.05
1.7
1.5
V
I
= -2.5V
1.3
1.1
0.9
GS
= -5A
D
0.04
0.03
V
I
= -4.5V
GS
= -10A
D
0.02
0.01
0.7
0.5
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Fig. 5 On-Resistance Variation with Temperature
Fig. 6 On-Resistance Variation with Temperature
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DMP2035UVTQ
Document number: DS37400 Rev. 2 - 2
DMP2035UVTQ
1.2
1.0
20
18
16
14
0.8
12
10
8
0.6
0.4
6
4
0.2
0
2
0
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100 125 150
0
0.3
0.6
0.9
1.2
1.5
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
100,000
10,000
10,000
T
= 150°C
= 125°C
A
T
= 150°C
A
T
= 125°C
A
T
A
1,000
1,000
100
100
T
= 85°C
T
= 85°C
A
A
T
= 25°C
A
T
= -55°C
A
10
1
10
1
T
= -55°C
A
T
= 25°C
A
2
4
6
8
10
2
4
6
8
10 12 14 16 18 20
-VGS, GATE-SOURCE VOLTAGE(V)
-VDS, DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Gate-Source Leakage Current vs. Voltage
Fig. 9 Typical Drain-Source Leakage Current vs. Voltage
10,000
10
f = 1MHz
8
6
C
iss
1,000
4
2
0
C
oss
C
rss
100
0
4
8
12 16 20 24 28 32 36 40
0
2
4
6
8
10 12 14 16 18 20
-VDS, DRAIN-SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Typical Junction Capacitance
Fig. 12 Gate-Charge Characteristics
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DMP2035UVTQ
Document number: DS37400 Rev. 2 - 2
DMP2035UVTQ
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
R
R
(t) = r(t) * R
= 88°C/W
JA
JA
JA
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
D
e1
01( 4x)
TSOT26
Dim
A
A1
A2
D
E
E1
b
Min
Max
1.00
Typ
E1/2
E/2
0.010 0.100
0.840 0.900
2.800 3.000 2.900
c
E1
E
Gauge Plane
Seating Plane
2.800 BSC
0
1.500 1.700 1.600
0.300 0.450
0.120 0.200
L
L2
c
e
e1
L
0.950 BSC
1.900 BSC
0.50
01( 4x)
e
b
A2
0.30
L2
θ
θ1
0.250 BSC
8°
A1
0°
4°
4°
A
12°
Seating Plane
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
C
Dimensions Value (in mm)
C
X
Y
0.950
0.700
1.000
3.199
Y1
Y1
Y
X
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DMP2035UVTQ
Document number: DS37400 Rev. 2 - 2
DMP2035UVTQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
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© Diodes Incorporated
DMP2035UVTQ
Document number: DS37400 Rev. 2 - 2
相关型号：
DMP2038USS-13
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.038ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
DIODES
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