DMP3010LPSQ-13 [DIODES]
Buffer/Inverter Based MOSFET Driver,;
| 型号： | DMP3010LPSQ-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Buffer/Inverter Based MOSFET Driver, 驱动 接口集成电路 |
| 文件： | 总8页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP3010LPSQ
Green
P-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI
Product Summary
Features
ID
TA = +25°C
-36A
x
x
x
x
x
x
x
x
x
x
x
Thermally Efficient Package – Cooler Running Applications
High Conversion Efficiency
V(BR)DSS
RDS(ON)
7.5mΩ @ VGS = -10V
10mΩ @ VGS = -4.5V
Low RDS(ON) – Minimizes On-State Losses
Low Input Capacitance
-30V
-31A
Fast Switching Speed
<1.1mm Package Profile – Ideal for Thin Applications
ESD HBM Protected up to 1kV
Description
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Available (Note 4)
This new generation 30V P-Channel Enhancement Mode MOSFET is
designed to minimize RDS(ON) yet maintain superior switching
,
performance. This device is ideal for use in notebook battery power
management and loadswitch.
Applications
Mechanical Data
x
x
Case: PowerDI®5060-8
x
x
x
Notebook Battery Power Management
DC-DC Converters
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Terminals: Finish – 100% Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
Loadswitch
x
x
x
x
D
PowerDI5060-8
Pin1
G
S
Top View
Top View
Internal Schematic
Pin Configuration
Bottom View
Ordering Information (Note 5)
Part Number
DMP3010LPSQ-13
Qualification
Automotive
Case
PowerDI5060-8
Packaging
2,500/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
PowerDI is a registered trademark of Diodes Incorporated.
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© Diodes Incorporated
DMP3010LPSQ
Document number: DS36683 Rev. 5 - 2
DMP3010LPSQ
Marking Information
PowerDI5060-8
D
D
D
D
= Manufacturer’s Marking
P3010LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 15 = 2015)
P3010LS
YY WW
WW = Week (01 - 53)
G
S
S
S
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-30
Unit
V
Gate-Source Voltage
±20
V
VGSS
Steady
Continuous Drain Current (Note 8) VGS = 10V
State
TA = +25°C
ID
-36
-29
A
A
A
TA = +70°C
Steady
Continuous Drain Current (Note 8) VGS = 4.5V
State
TA = +25°C
ID
-31
-25
TA = +70°C
Steady
Continuous Drain Current (Note 7) VGS = 10V
State
TA = +25°C
ID
-14.5
-11.5
TA = +70°C
Pulsed Drain Current (Notes 7 & 10)
Avalanche Current (Notes 11 & 12)
Avalanche Energy (Notes 11 & 12) L = 1mH
-100
-17.5
153
A
A
IDM
IAS
mJ
EAS
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Symbol
PD
Value
1.26
Unit
W
97
°C/W
W
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
Power Dissipation (Note 7)
RθJA
PD
2.18
55
°C/W
W
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 7)
Power Dissipation (Note 8)
RθJA
PD
14.37
8.7
°C/W
W
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 8)
Power Dissipation (Notes 8 & 9)
RθJA
PD
58.7
2.13
°C/W
°C
Thermal Resistance, Junction to Case @TC = +25°C (Notes 8 & 9)
Operating and Storage Temperature Range
RθJC
TJ, TSTG
-55 to +150
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Device mounted on FR-4 PCB with infinite heatsink.
9. R
is guaranteed by design while R
is determined by the user’s board design.
θCA
θJC
10. Repetitive rating, pulse width limited by junction temperature, 10μs pulse, duty cycle = 1%.
11. I and E rating are based on low frequency and duty cycles to keep T = +25°C.
AS AS
J
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DMP3010LPSQ
Document number: DS36683 Rev. 5 - 2
DMP3010LPSQ
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 12)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-30
—
—
—
—
—
-1
V
BVDSS
IDSS
VGS = 0V, ID = -250μA
μA
nA
VDS = -30V, VGS = 0V
VGS = ±20V, VDS = 0V
—
±100
IGSS
ON CHARACTERISTICS (Note 12)
Gate Threshold Voltage
-1.1
—
-1.6
5.7
-2.1
7.5
10
V
VGS(th)
VDS = VGS, ID = -250μA
VGS = -10V, ID = -10A
VGS = -4.5V, ID = -10A
VDS = -15V, ID = -10A
VGS = 0V, IS = -1A
Static Drain-Source On-Resistance
mΩ
RDS(ON)
—
7.2
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 13)
Input Capacitance
30
—
S
V
|Yfs|
VSD
—
-0.65
-1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6,234
1,500
774
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = 15V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
1.28
126.2
59.2
16.1
15.7
11.4
9.4
VDS = 0V, VGS = 0V, f = 1MHz
VDS = -15V, ID = -10A
nC
nC
nC
nC
ns
ns
ns
ns
Total Gate Charge (VGS = -10V)
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
Qg
Qg
VDS = -15V, VGS = -4.5V,
ID = -10A
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
VDS = -15V, VGEN = -10V,
RG = 6Ω, ID = -1A
Turn-Off Delay Time
260.7
99.3
tD(off)
tf
Turn-Off Fall Time
Notes:
12. Short duration pulse test used to minimize self-heating effect.
13. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMP3010LPSQ
Document number: DS36683 Rev. 5 - 2
DMP3010LPSQ
30
25
30
25
V
= -10V
GS
V
= -4.5V
V
= -5V
DS
GS
V
= -5.0V
GS
V
= -3.5V
20
15
10
20
15
10
GS
V
= -3.0V
GS
V
= -2.5V
GS
T
A
= 150°C
A
T
= 125°C
T
= 85°C
5
0
5
0
A
T
= 25°C
A
V
= -2.0V
GS
T
= -55°C
A
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
-VDS, DRAIN-SOURCE VOLTAGE (V)
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
Fig. 1 Typical Output Characteristic
0.016
0.014
0.020
0.016
V
= -4.5V
GS
0.012
0.010
0.008
0.006
T
= 150°C
A
0.012
0.008
T
T
= 125°C
= 85°C
A
A
T
= 25°C
A
V
= -4.5V
= -10V
T
= -55°C
GS
A
0.004
0.002
0
V
GS
0.004
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
-ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
vs. Drain Current and Temperature
1.6
1.4
0.020
0.016
1.2
1.0
0.012
0.008
V
= -4.5V
GS
V
= -10V
I
= -10A
GS
D
I
= -20A
D
V
= -10V
V
= -4.5V
= -10A
0.004
0
0.8
0.6
GS
GS
I
= -20A
I
D
D
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
Fig. 6 On-Resistance Variation with Temperature
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© Diodes Incorporated
DMP3010LPSQ
Document number: DS36683 Rev. 5 - 2
DMP3010LPSQ
2.5
2.0
30
25
20
I
= -1mA
1.5
1.0
D
T
= 25°C
A
15
10
I
= -250μA
D
0.5
0
5
0
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100 125 150
0
0.2
0.4
0.6
0.8
1.0
1.2 1.4
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
10,000
100,000
10,000
C
iss
T
T
= 150°C
A
1,000
100
= 125°C
A
C
oss
1,000
C
rss
T
= 85°C
A
10
1
f = 1MHz
T
= 25°C
A
100
0
5
10
15
20
25
30
0
4
8
12
16
20
-VDS, DRAIN-SOURCE VOLTAGE (V)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
10
8
100
R
DS(on)
Limited
V
= -15V
DS
I
= -10A
D
10
1
DC
6
4
2
P
= 10s
P
W
= 1s
W
P
= 100ms
W
P
= 10ms
W
TJ(max) = 150°C
TA = 25°C
VGS = -10V
0.1
P
= 1ms
W
Single Pulse
DUT on 1 * MRP Board
0.01
0
0
20
40
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Source Voltage vs. Total Gate Charge
60
80
100
120 140
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
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DMP3010LPSQ
Document number: DS36683 Rev. 5 - 2
DMP3010LPSQ
1
D = 0.7
D = 0.5
D = 0.3
0.1
0.01
D = 0.1
D = 0.9
D = 0.05
D = 0.02
D = 0.01
D = 0.005
DUT mounted on FR-4 PCB with
minimum recommended pad layout
R
R
(t) = r(t) * R
= 97°C/W
TJA
TJA
TJA
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Fig. 13 Transient Thermal Response
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DMP3010LPSQ
Document number: DS36683 Rev. 5 - 2
DMP3010LPSQ
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
PowerDI5060-8
PowerDI5060-8
Dim
A
A1
b
b2
b3
c
Min
0.90
0.00
0.33
0.200
0.40
0.230
Max
1.10
0.05
0.51
0.350 0.273
0.80 0.60
0.330 0.277
5.15 BSC
5.10
4.10
4.30
6.15 BSC
6.00
3.68
4.39
1.27 BSC
0.71
ꢀꢁ
0.71
0.200 0.175
4.035 3.635
1.40
12°
8°
Typ
1.00
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0.41
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D
H
D1
D2
D3
E
E1
E2
E3
e
G
K
L
L1
M
4.70
3.70
3.90
4.90
3.90
4.10
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ꢀ
5.60
3.28
3.99
5.80
3.48
4.19
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0.51
0.51ꢁ
0.51
0.100
3.235
1.00
10°
0.61
ꢀ
0.61
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Θ
Θ1
1.21
11°
7°
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6°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
PowerDI5060-8
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Dimensions
Value (in mm)
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
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X2
X3
X4
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Y1
Y2
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Y4
Y5
Y6
Y7
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© Diodes Incorporated
DMP3010LPSQ
Document number: DS36683 Rev. 5 - 2
DMP3010LPSQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
DMP3010LPSQ
Document number: DS36683 Rev. 5 - 2
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