DMP32D4SW [DIODES]

Low On-Resistance;


型号：	DMP32D4SW
厂家：	DIODES INCORPORATED
描述：	Low On-Resistance
文件：	总6页 (文件大小：244K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DMP32D4SW

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features

I_DMax

@ T_A= 25C

-250mA



Low On-Resistance

V_(BR)DSS

R_DS(on)Max

ESD Protected Gate

2.4 @ V_GS= -10V

4 @ V_GS= -4.5V

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

-30V

-200mA

Description

Mechanical Data

This MOSFET has been designed to minimize the on-state resistance

(R_DS(on)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.



Case: SOT323

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).



Applications



Load Switch

Portable Applications

Power Management Functions



Weight: 0.006 grams (approximate)

Drain

SOT323

Gate

Protection

Source

ESD PROTECTED

Diode

Top View

Pin-out

Equivalent Circuit

Ordering Information (Note 4)

Product

Marking

Reel size (inches)

Quantity per reel

DMP32D4SW-7

DMP32D4SW-13

P32D

3,000

10,000

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.

Marking Information

P32D = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Z = 2012)

P32D

M = Month (ex: 9 = September)

Date Code Key

Year

2012

2013

2014

2015

2016

2017

2018

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

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www.diodes.com

March 2013

DMP32D4SW

Document number: DS35823 Rev. 3 - 2

DMP32D4SW

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

-30

Unit

Gate-Source Voltage

±20

V_GSS

T_A= +25°C

T_A= +70°C

250

200

Continuous Drain Current (Note 6)

Pulsed Drain Current (Note 6)

_GS= -10V

I_D

-1

I_DM

Thermal Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

(Note 5)

300

432

398

290

142

Total Power Dissipation

(Note 6)

P_D

(Note 5)

(Note 6)

(Note 5)

Thermal Resistance, Junction to Ambient

R_θJA

°C/W

°C

Thermal Resistance, Junction to Case

R_θJC

Operating and Storage Temperature Range

-55 to 150

T_J, T_STG

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

-30

BV_DSS

I_DSS

V_GS= 0V, I_D= -1mA

-1

µA

Zero Gate Voltage Drain Current T_J= +25°C

Gate-Source Leakage

V_DS= -30V, V_GS= 0V

V_GS= ±16V, V_DS= 0V

±10

I_GSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-1.4

-2.4

2.4

V_GS(th)

V_DS= V_GS, I_D= -250μA

V_GS= -10V, I_D= -0.5A

Static Drain-Source On-Resistance

Ω

R_{DS (ON)}

_GS= -4.5V, I_D= -0.3A

Forward Transfer Admittance

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

|Y_fs|

V_SD

V_DS= -10V, I_D= -400mA

V_GS= 0V, I_S= -300mA

0.8

1.2

51.16

10.85

8.88

275

0.6

C_iss

C_oss

C_rss

R_g

_DS= -15V, V_GS= 0V,

Output Capacitance

f = 1.0MHz

Reverse Transfer Capacitance

Gate Resistance

V_DS= 0V, V_GS= 0V, f = 1MHz

V_GS= -4.5V

Total Gate Charge

Q_g

1.2

Total Gate Charge

Q_g

V_DS= -10V,

0.2

Gate-Source Charge

Gate-Drain Charge

I_D= -1A

Q_gs

Q_gd

t_D(on)

t_r

V_GS= -10V

0.3

9.86

11.5

31.8

21.9

Turn-On Delay Time

Turn-On Rise Time

V_DS= -15V, I_D= -1A

V_GS= -10V, R_G= 6Ω

Turn-Off Delay Time

Turn-Off Fall Time

t_D(off)

t_f

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout

7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

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www.diodes.com

March 2013

DMP32D4SW

Document number: DS35823 Rev. 3 - 2

DMP32D4SW

2.0

1.5

2.0

1.8

1.6

= -10V

= -5.0V

= -4.5V

1.4

1.2

1.0

0.8

0.6

0.4

= -4.0V

1.0

= -3.5V

= -3.0V

0.5

= 150C

= 85



= 125C

= 25C

0.2

= -2.5V

= -55C

-V_GS, GATE-SOURCE VOLTAGE (V)

-V_DS, DRAIN -SOURCE VOLTAGE (V)

Figure 2 Typical Transfer Characteristics

Figure 1 Typical Output Characteristics

1.5

1.2

1.0

0.9

= -0.5A

0.8

0.7

= -0.3A

= -2.5V

0.9

0.6

0.5

0.4

= -4.5V

0.3

0.2

0.3

0.1

0.5

1.0

1.5

2.0

2.5

3.0

10 12 14 16 18 20

-V_GS, GATE-SOURCE VOLTAGE (V)

-I_D, DRAIN SOURCE CURRENT (A)

Figure 4 Typical Drain-Source On-Resistance

vs. Gate-Source Voltage

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

1.6

1.4

1.2

= -10V

= -1.0A

= -4.5V

= 150C

1.0

0.8

0.6

= 125C

= -4.5V

= -500mA

1.2

1.0

= 85C

= 25C

= -55C

0.4

0.2

0.8

0.6

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

-I_D, DRAIN SOURCE CURRENT (A)

-50 -25

T_J, JUNCTION TEMPERATURE (

Figure 6 On-Resistance Variation with Temperature

75 100 125 150

C)

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

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www.diodes.com

March 2013

DMP32D4SW

Document number: DS35823 Rev. 3 - 2

DMP32D4SW

1.5

1.2

2.6

2.4

2.2

2.0

1.8

1.6

-I = 1mA

0.9

0.6

= -4.5V

= -500mA

-I = 250µA

= -10V

= -1.0A

0.3

1.4

1.2

-50 -25

T_J, JUNCTION TEMPERATURE (

Figure 7 On-Resistance Variation with Temperature

75 100 125 150

-50 -25

75 100 125 150

C)

T_A, AMBIENT TEMPERATURE (°C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

2.0

1.8

1.6

f = 1MHz

1.4

1.2

1.0

0.8

0.6

0.4

100

iss

T = 150C

oss

T = 125C

rss

T = 85C

T = 25C

0.2

T = -55C

0.3

0.6

0.9

1.2

1.5

-V_DS, DRAIN-SOURCE VOLTAGE (V)

-V_SD, SOURCE-DRAIN VOLTAGE (V)

Figure 10 Typical Junction Capacitance

Figure 9 Diode Forward Voltage vs. Current

= -10V

= -1A

0.2

0.4

Q_g, TOTAL GATE CHARGE (nC)

Figure 11 Gate-Charge Characteristics

0.6

0.8

1.0

1.2 1.4

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www.diodes.com

March 2013

DMP32D4SW

Document number: DS35823 Rev. 3 - 2

DMP32D4SW

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

SOT323

Dim

Min

Max

0.40

1.35

2.20

1.40

2.20

0.10

1.00

0.40

0.18

8°

Typ

0.30

1.30

2.10

0.65

1.30

2.15

0.05

0.95

0.30

0.11

0.25

1.15

2.00

1.20

1.80

0.0

0.90

0.25

0.10

0°



All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Dimensions Value (in mm)

2.8

0.7

0.9

1.9

1.0

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March 2013

DMP32D4SW

Document number: DS35823 Rev. 3 - 2

DMP32D4SW

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

6 of 6

www.diodes.com

March 2013

DMP32D4SW

Document number: DS35823 Rev. 3 - 2

DMP32D4SW [DIODES]

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