DMP4013LFGQ-13 [DIODES]
40V P-CHANNEL ENHANCEMENT MODE MOSFET;型号: | DMP4013LFGQ-13 |
厂家: | DIODES INCORPORATED |
描述: | 40V P-CHANNEL ENHANCEMENT MODE MOSFET |
文件: | 总7页 (文件大小:609K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DMP4013LFGQ
40V P-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI3333-8
Product Summary
Features and Benefits
Low RDS(ON) – Ensures On-State Losses are Minimized
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
ID Max
TA = +25°C
-10.3A
BVDSS
RDS(ON) Max
13mΩ @ VGS = -10V
18mΩ @ VGS = -4.5V
-40V
-8.8A
Occupies 33% of the Board Area Occupied by SO-8, Enabling
Smaller End Product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Case: PowerDI®3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
Reverse Polarity Protection
Power Management Functions
DC-DC Converters
PowerDI3333-8
D
Pin 1
S
S
S
G
G
D
D
D
D
S
Bottom View
Top View
Equivalent Circuit
Ordering Information (Note 5)
Part Number
DMP4013LFGQ-7
DMP4013LFGQ-13
Case
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
PowerDI3333-8
PowerDI3333-8
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See http://www.diodes.com/quality/lead_free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
PowerDI3333-8
P13= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 18 = 2018)
WW = Week Code (01 to 53)
P13
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
www.diodes.com
March 2018
© Diodes Incorporated
DMP4013LFGQ
Document number: DS38779 Rev. 2 - 2
DMP4013LFGQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-40
Units
V
V
Gate-Source Voltage
±20
VGSS
Steady
State
TA = +25°C
-10.3
-8.3
A
A
ID
ID
TA = +70°C
TA = +25°C
TA = +70°C
Continuous Drain Current (Note 7) VGS = -10V
-13.7
-11
t<10s
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
-80
-2.6
-34
58
A
A
IDM
IS
Maximum Continuous Body Diode Forward Current (Note 7)
Avalanche Current, L = 0.1mH
A
IAS
EAS
Avalanche Energy, L = 0.1mH
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 6)
1
W
PD
RθJA
PD
Steady State
123
69
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
°C/W
W
t<10s
2.1
60
34
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 7)
RθJA
°C/W
°C
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
3.3
RθJC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-40
—
—
—
—
—
-1
V
BVDSS
IDSS
VGS = 0V, ID = -250μA
VDS = -40V, VGS = 0V
VGS = ±20V, VDS = 0V
µA
nA
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
—
±100
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-1
—
—
—
—
-3
13
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = -250μA
VGS = -10V, ID = -10A
VGS = -4.5V, ID = -8A
VGS = 0V, IS = -1A
9.4
Static Drain-Source On-Resistance
12.3
-0.7
18
Diode Forward Voltage
-1.2
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
3,426
283
235
4.7
VDS = -20V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
32.5
68.6
8.2
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Qg
Qg
VDS = -20V, ID = -10A
Qgs
Qgd
tD(ON)
tR
9.9
Gate-Drain Charge
5.3
Turn-On Delay Time
20
Turn-On Rise Time
VDD = -20V, VGEN = -10V,
126
83
Turn-Off Delay Time
RG = 3Ω, ID = -10A
tD(OFF)
tF
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
19.5
9.8
tRR
IF = -10A, di/dt = 100A/μs
QRR
Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 7
www.diodes.com
March 2018
© Diodes Incorporated
DMP4013LFGQ
Document number: DS38779 Rev. 2 - 2
DMP4013LFGQ
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
V
= -10V
GS
V
= -5.0V
DS
V
= -4.5V
GS
V
= -4.0V
GS
V
= -2.5V
GS
V
= -3.5V
GS
V
= -3.0V
GS
T
= 150C
A
T
= 85C
A
T
= 125C
A
T
= 25C
V
= -2.0V
A
GS
T
= -55C
A
0
0.5
0.0
1
1.5
2
2.5
3
0
1
2
3
4
5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0.016
0.014
0.012
0.01
0.06
0.05
0.04
0.03
0.02
0.01
0
)
I
= -10A
= -8A
D
I
D
V
= -4.5V
GS
V
= -10V
GS
0.008
0.006
0
5
10
15
20
25
30
0
2
4
6
8
10 12 14 16 18 20
ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
VGS , GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
0.02
0.018
0.016
0.014
0.012
0.01
1.8
1.6
1.4
1.2
1
V
= -10V
GS
V
I
= -10V
GS
= -10A
T
= 150C
= 85C
D
A
T
= 125C
A
V
I
= -4.5V
GS
= -8A
T
A
D
T
= 25C
A
0.008
0.006
0.004
T
A
= -55C
0.8
0.6
-50 -25
0
25
50
75 100 125 150
0
5
10
15
20
25
30
TJ, JUNCTION TEMPERATURE (C)
ID, DRAIN SOURCE CURRENT (A)
Figure 6 On-Resistance Variation with Temperature
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
3 of 7
www.diodes.com
March 2018
© Diodes Incorporated
DMP4013LFGQ
Document number: DS38779 Rev. 2 - 2
DMP4013LFGQ
0.022
0.02
1.8
1.6
1.4
1.2
1
V
I
= -4.5V
GS
= -8A
0.018
0.016
0.014
0.012
0.01
D
-I = 1mA
D
-ID=250A
V
I
= -10V
GS
= -10A
D
0.8
0.6
0.4
0.008
0.006
0.004
-50 -25
0
25
50
75 100 125 150
(°C )
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
TA, AMBIENT TEMPERATURE
Figure 7 On-Resistance Variation with Temperature
Figure 8 Gate Threshold Variation vs. Ambient Temperature
30
25
20
15
10
5
10000
f = 1MHz
C
iss
1000
T = 150C
A
T = 85C
A
T = 125C
A
T = 25C
A
C
oss
C
rss
T = -55C
A
0
0
100
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
25
30
35
40
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
10
8
100
10
R
DS(ON)
Limited
)
(
DC
P
6
= 10s
W
V
I
= -20V
DS
= -10A
1
P
= 1s
W
D
P
= 100ms
W
4
P
= 10ms
P
W
0.1
0.01
T
= 150°C
J(MAX)
= 1ms
P
W
2
T
= 25°C
= -10V
A
V
= 100µs
W
GS
Single Pulse
DUT on 1 * MRP Board
0
0
10
20
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
30
40
50
60
70
0.1
1
10
100
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
4 of 7
www.diodes.com
March 2018
© Diodes Incorporated
DMP4013LFGQ
Document number: DS38779 Rev. 2 - 2
DMP4013LFGQ
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
RJA(t) = r(t) * RJA
RJA = 1
119°C /W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
1E-04
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIMES (sec)
Figure 13 Transient Thermal Resistance
5 of 7
www.diodes.com
March 2018
© Diodes Incorporated
DMP4013LFGQ
Document number: DS38779 Rev. 2 - 2
DMP4013LFGQ
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI3333-8
A3
A1
A
PowerDI3333-8
Dim Min Max Typ
0.75 0.85 0.80
A1 0.00 0.05 0.02
Seating Plane
A
D
A3
b
0.203
0.27 0.37 0.32
L( 4x)
E4
D2
1
b2 0.15 0.25 0.20
3.25 3.35 3.30
D2 2.22 2.32 2.27
3 25 3.35 3.30
D
Pin #1 ID
b2( 4x)
E
E2 1.56 1.66 1.61
E3 0.79 0.89 0.84
E4 1.60 1.70 1.65
E
E3
E2
e
L
0.65
0.35 0.45 0.40
L1
z
0.39
0.515
L1( 3x)
8
All Dimensions in mm
z( 4x)
b
e
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI3333-8
X3
X2
8
Y4
Dimensions Value (in mm)
C
X
0.650
0.420
0.420
0.230
2.370
0.700
1.850
2.250
3.700
0.540
X1
Y1
Y2
X1
X2
X3
Y
Y1
Y2
Y3
Y4
Y3
Y
1
X
C
6 of 7
www.diodes.com
March 2018
© Diodes Incorporated
DMP4013LFGQ
Document number: DS38779 Rev. 2 - 2
DMP4013LFGQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for
use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
www.diodes.com
7 of 7
www.diodes.com
March 2018
© Diodes Incorporated
DMP4013LFGQ
Document number: DS38779 Rev. 2 - 2
相关型号:
DMP4015SPSQ-13
Small Signal Field-Effect Transistor, 8.5A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, POWERDI5060-8, 8 PIN
DIODES
©2020 ICPDF网 联系我们和版权申明