DMS3016SSSA-13 [DIODES]

Power Field-Effect Transistor, 9.8A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8;


型号：	DMS3016SSSA-13
厂家：	DIODES INCORPORATED
描述：	Power Field-Effect Transistor, 9.8A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8 开关脉冲光电二极管晶体管
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中文：	中文翻译
下载：	下载PDF数据表文档文件

DMS3016SSSA

N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE

Features

Mechanical Data

•

DIOFET utilizes a unique patented process to monolithically

integrate a MOSFET and a Schottky in a single die to deliver:

•

Case: SO-8

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Low R_DS(ON)- minimizes conduction losses

•

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram Below

Weight: 0.072 grams (approximate)

•

Ultra Low V_SD– enhanced to reduce losses due to body

diode conduction

Low Q_rr- lower Q_rrof the integrated Schottky reduces body

diode switching losses

Low gate capacitance (Q_g/Q_gs) ratio – reduces risk of shoot-

through or cross conduction currents at high frequencies

Avalanche rugged – I_ARand E_ARrated

•

Lead Free, RoHS Compliant (Note 1)

"Green" Device (Note 2)

Qualified to AEC-Q101 Standards for High Reliability

Top View

Internal Schematic

Top View

Ordering Information (Note 3)

Part Number

DMS3016SSSA-13

Case

SO-8

Packaging

2500 / Tape & Reel

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Logo

S3016SA

YY WW

Part no.

Xth week: 01 ~ 53

Year: “09” = 2009

Year: “10” = 2010

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www.diodes.com

October 2010

DMS3016SSSA

Document number: DS35073 Rev. 1 - 2

DMS3016SSSA

Maximum Ratings @T = 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-Source Voltage

±12

V_GSS

Steady

Continuous Drain Current (Note 4) V_GS= 4.5V

State

TA = 25°C

TA = 85°C

9.8

6.3

I_D

Pulsed Drain Current (Note 5)

I_DM

I_AR

Avalanche Current (Note 5) (Note 6)

Repetitive Avalanche Energy (Note 5) (Note 6) L = 0.3mH

25.4

E_AR

Thermal Characteristics

Characteristic

Power Dissipation (Note 4)

Symbol

P_D

Value

1.54

Unit

°C/W

°C

Thermal Resistance, Junction to Ambient @T_A= 25°C (Note 4)

Operating and Storage Temperature Range

R_θJA

-55 to +150

T_J, T_STG

Electrical Characteristics @ T_A= 25°C unless otherwise stated

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

Symbol

Min

Typ

Max

Unit

Test Condition

BV_DSS

I_DSS

V_GS= 0V, I_D= 250μA

V_DS= 30V, V_GS= 0V

V_GS= ±12V, V_DS= 0V

1.0

±100

I_GSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

1.0

2.3

V_GS(th)

V_DS= V_GS, I_D= 250μA

V_GS= 10V, I_D= 9.8A

V_GS= 4.5V, I_D= 9.8A

V_DS= 5V, I_D= 9.8A

V_GS= 0V, I_S= 1A

mΩ

Static Drain-Source On-Resistance

R_{DS (ON)}

0.35

Forward Transfer Admittance

Diode Forward Voltage

|Y_fs|

V_SD

I_S

0.6

Maximum Body-Diode + Schottky Continuous Current

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

1849

158

123

2.68

18.5

C_iss

C_oss

C_rss

R_g

V_DS=15V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

0.53

4.82

V_DS=0V, V_GS= 0V, f = 1MHz

Total Gate Charge V_GS= 4.5V

Total Gate Charge V_GS= 10V

Gate-Source Charge

Q_g

V_DS= 15V, V_GS= 10V,

I_D= 9.8A

4.7

Q_gs

Q_gd

t_D(on)

t_r

Gate-Drain Charge

4.0

Turn-On Delay Time

6.62

8.73

36.41

4.69

Turn-On Rise Time

_GS= 10V, V_DS= 10V,

Turn-Off Delay Time

R_G= 3Ω, R_L= 1.2Ω

t_D(off)

t_f

Turn-Off Fall Time

Notes:

4. Device mounted on minimum recommended layout. The value in any given application depends on the user’s specific board design.

5. Repetitive rating, pulse width limited by junction temperature.

6. I_ARand E_ARrating are based on low frequency and duty cycles to keep T_J= 25°C

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

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October 2010

DMS3016SSSA

Document number: DS35073 Rev. 1 - 2

DMS3016SSSA

= 4.5V

= 4.0V

= 5V

= 3.5V

= 3.0V

= 2.5V

= 150°C

= 125°C

= 85°C

= 25°C

= 2.2V

= 2.0V

= -55°C

0.5

1.5

0.5

1.5

2.5

V_DS, DRAIN-SOURCE VOLTAGE (V)

V_GS, GATE-SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristic

Fig. 1 Typical Output Characteristic

0.05

0.04

0.03

= 4.5V

= 2.5V

0.03

0.02

= 150°C

0.02

= 125°C

= 85°C

= 4.5V

= 25°C

0.01

= -55°C

= 10V

I_D, DRAIN CURRENT (A)

Fig. 4 Typical On-Resistance

I_D, DRAIN-SOURCE CURRENT (A)

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

vs. Drain Current and Temperature

0.03

0.02

1.6

1.4

1.2

= 4.5V

= 10A

= 10V

= 20A

= 4.5V

= 10A

1.0

0.01

= 10V

= 20A

0.8

0.6

-50 -25

75 100 125 150

T_A, AMBIENT TEMPERATURE (°C)

Fig. 6 On-Resistance Variation with Temperature

Fig. 5 On-Resistance Variation with Temperature

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October 2010

DMS3016SSSA

Document number: DS35073 Rev. 1 - 2

DMS3016SSSA

3.0

2.5

= 25°C

2.0

1.5

1.0

= 100mA

0.5

0.2

0.4

0.6

0.8

1.0

1.2

-50 -25

75 100 125 150

V_SD, SOURCE-DRAIN VOLTAGE (V)

T_A, AMBIENT TEMPERATURE (°C)

Fig. 8 Diode Forward Voltage vs. Current

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

10,000

1,000

10,000

f = 1MHz

= 125°C

= 85°C

iss

1,000

100

oss

rss

100

= 25°C

V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 10 Typical Leakage Current

vs. Drain-Source Voltage

Fig. 9 Typical Total Capacitance

= 15V

= 12.7A

10 15 20 25 30 35 40 45

Q_g, TOTAL GATE CHARGE (nC)

Fig. 11 Gate-Charge Characteristics

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October 2010

DMS3016SSSA

Document number: DS35073 Rev. 1 - 2

DMS3016SSSA

D = 0.7

D = 0.5

D = 0.3

0.1

D = 0.1

D = 0.9

D = 0.05

(t) = r(t) * R

θJA

= 80°C/W

D = 0.02

D = 0.01

D = 0.005

0.01

P(pk)

- T = P * R (t)

A θJA

Duty Cycle, D = t /t

D = Single Pulse

0.001

0.0001

0.001

0.01

0.1

100

1,000

t₁, PULSE DURATION TIME (s)

Fig. 12 Transient Thermal Response

Package Outline Dimensions

SO-8

Dim

Min

0.10

1.30

0.15

0.3

4.85

5.90

3.85

1.27 Typ

0.62

0°

Max

1.75

0.20

1.50

0.25

0.5

4.95

6.10

3.95

Gauge Plane

Seating Plane

Detail ‘A’

7°~9°

Detail ‘A’

0.35

0.82

8°

All Dimensions in mm

Suggested Pad Layout

Dimensions Value (in mm)

0.60

1.55

5.4

1.27

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October 2010

DMS3016SSSA

Document number: DS35073 Rev. 1 - 2

DMS3016SSSA

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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October 2010

DMS3016SSSA

Document number: DS35073 Rev. 1 - 2

DMS3016SSSA-13 [DIODES]

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