DZT955 [DIODES]
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR; 低VCE （ SAT） PNP表面贴装晶体管
| 型号： | DZT955 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR |
| 文件： | 总4页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DZT955
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
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Features
•
•
•
•
•
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
SOT-223
Mechanical Data
•
•
Case: SOT-223
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.115 grams (approximate)
TOR
LLEC
2,4
CO
3 E
2 C
1 B
•
•
C 4
T
1
ASE
B
3
•
•
•
EMITTER
EW
VI
OP
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
Value
-180
-140
-6
Unit
V
VCBO
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Continuous Collector Current
Peak Pulse Current
-4
A
-10
A
ICM
Thermal Characteristics
Characteristic
Symbol
PD
Rθ
Value
1
Unit
W
Power Dissipation (Note 3) @ TA = 25°C
125
°C/W
°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
JA
-55 to +150
Tj, TSTG
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS31280 Rev. 2 - 2
1 of 4
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DZT955
© Diodes Incorporated
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
V(BR)CBO
V(BR)CEO
V(BR)EBO
-180
-140
-6
V
V
V
⎯
⎯
⎯
⎯
⎯
⎯
IC = -100μA, IE = 0
IC = -10mA, IB = 0
IE = -100μA, IC = 0
V
V
CB = -150V, IE = 0
CB = -150V, IE = 0,
nA
μA
-50
-1
Collector Cutoff Current
ICBO
IEBO
⎯
⎯
⎯
⎯
TA = 100°C
VEB = - 6V, IC = 0
Emitter Cutoff Current
-10
nA
ON CHARACTERISTICS (Note 4)
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-60
IC = -100mA, IB = -5mA
IC = -500mA, IB = -50mA
IC = -1A, IB = -100mA
IC = -3A, IB = -300mA
-120
-150
-370
Collector-Emitter Saturation Voltage
VCE(SAT)
mV
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VBE(SAT)
VBE(ON)
-1110
-950
mV
mV
IC = -3A, IB = -300mA
IC = -3A, VCE = -5V
100
100
75
⎯
⎯
⎯
10
⎯
300
⎯
IC = -10mA, VCE = -5V
IC = -1A, VCE = -5V
IC = -3A, VCE = -5V
IC = -10A, VCE = -5V
DC Current Gain
hFE
⎯
⎯
⎯
SMALL SIGNAL CHARACTERISTICS
IC = -100mA, VCE = -10V,
f = 100MHz
VCB = -20V, f = 1MHz
Current Gain-Bandwidth Product
fT
150
40
MHz
pF
⎯
⎯
⎯
⎯
Output Capacitance
Cobo
SWITCHING CHARACTERISTICS
ton
toff
⎯
⎯
85
430
⎯
⎯
IC = -1A, IB1 = -100mA
IB2 = 100mA, VCC = -50V
Switching Times
ns
Notes:
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
0.8
0.6
1.0
0.8
I
= -5mA
= -4mA
= -3mA
B
I
B
0.6
0.4
I
B
0.4
I
= -2mA
B
0.2
0
0.2
0
I
= -1mA
B
0
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
50
150
100
125
75
0
1
2
3
4
5
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
DS31280 Rev. 2 - 2
2 of 4
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DZT955
© Diodes Incorporated
350
300
0.3
0.2
250
200
150
100
0.1
50
0
0
0.001
0.001
0.01
0.1
1
10
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
1.2
1
1.0
0.8
0.6
0.4
0.8
0.6
0.4
0.2
0
0.2
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
-IC, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
1,000
100
10
200
150
f = 1MHz
V
= -10V
CE
f = 100MHz
100
50
0
0.1
1
10
VR, REVERSE VOLTAGE (V)
Fig. 7 Typical Output Capacitance Characteristics
100
0
10 20 30 40 50 60 70 80 90 100
-IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current
DS31280 Rev. 2 - 2
3 of 4
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DZT955
© Diodes Incorporated
Ordering Information (Note 5)
Device
Packaging
Shipping
DZT955-13
SOT-223
2500/Tape & Reel
Notes:
5. For packaging details, go to our website at http://www.diodes.com/ap02007.pdf.
Marking Information
(Top View)
P414 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year ex: 7 = 2007
WW = Week code 01 - 52
YWW
P414
Package Outline Dimensions
SOT-223
Dim Min Max Typ
A
1.55 1.65 1.60
A1 0.010 0.15 0.05
b1
b2
C
D
E
E1
e
e1
L
2.90 3.10 3.00
0.60 0.80 0.70
0.20 0.30 0.25
6.45 6.55 6.50
3.45 3.55 3.50
6.90 7.10 7.00
—
—
—
—
4.60
2.30
0.85 1.05 0.95
0.84 0.94 0.89
Q
All Dimensions in mm
Suggested Pad Layout: (Dimensions in mm)
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS31280 Rev. 2 - 2
4 of 4
www.diodes.com
DZT955
© Diodes Incorporated
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