ES2C [DIODES]

2.0A SURFACE MOUNT SUPER-FAST RECTIFIER; 2.0A表面装载超快速整流器


型号：	ES2C
厂家：	DIODES INCORPORATED
描述：	2.0A SURFACE MOUNT SUPER-FAST RECTIFIER 2.0A表面装载超快速整流器二极管光电二极管功效
文件：	总2页 (文件大小：47K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ES2A/A - ES2D/A

2.0A SURFACE MOUNT SUPER-FAST RECTIFIER

Features

ꢀ

Glass Passivated Die Construction

Super-Fast Recovery Time For High Efficiency

Low Forward Voltage Drop and High Current

Capability

Surge Overload Rating to 50A Peak

Ideally Suited for Automated Assembly

Plastic Material: UL Flammability

Classification Rating 94V-0

SMA

Min

SMB

Min

Dim

Max

2.92

4.60

1.63

0.31

5.59

0.20

1.52

2.62

Max

3.94

4.57

2.21

0.31

5.59

0.20

1.52

2.62

ꢀ

2.29

4.00

1.27

0.15

4.80

0.10

0.76

2.01

3.30

4.06

1.96

0.15

5.00

0.10

0.76

2.00

Mechanical Data

ꢀ

Case: Molded Plastic

Terminals: Solder Plated Terminal -

Solderable per MIL-STD-202, Method 208

Polarity: Cathode Band or Cathode Notch

SMA Weight: 0.064 grams (approx.)

SMB Weight: 0.093 grams (approx.)

Mounting Position: Any

All Dimensions in mm

ꢀ

AA, BA, CA, DA Suffix Designates SMA Package

A, B, C, D, Suffix Designates SMB Package

Marking: Type Number

@ T_A= 25ꢁC unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

ES2A/A

ES2B/A

100

ES2C/A

150

ES2D/A

200

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_O

RMS Reverse Voltage

105

140

Average Rectified Output Current

@ T_T= 110ꢁC

2.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave Superimposed on Rated Load

(JEDEC Method)

I_FSM

Forward Voltage

@ I_F= 2.0A

V_FM

I_RM

0.92

5.0

350

Peak Reverse Current

at Rated DC Blocking Voltage

@ T_A25ꢁC

ꢂA

@ T_A= 125ꢁC

t_rr

C_j

Reverse Recovery Time (Note 3)

Typical Junction Capacitance (Note 2)

R_ꢃJT

T_j,T_STG

Typical Thermal Resistance, Junction to Terminal (Note 1)

Operating and Storage Temperature Range

°C/W

ꢁC

-55 to +150

Notes:

1. Unit mounted on PC board with 5.0 mm²(0.013 mm thick) copper pads as heat sink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3. Measured with I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A. See Figure 5.

DS14002 Rev. F-2

1 of 2

ES2A/A - ES2D/A

0.75

2.0

T_j= 25°C

Pulse width = 300µs

1.6

1.0

1.2

0.8

0.4

0.1

0.01

100

125

150

175

0.4

0.8

1.2

1.6

T_T, TERMINAL TEMPERATURE (°C)

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

Fig. 1 Forward Current Derating Curve

1000

Single Half-Sine-Wave

(JEDEC Method)

T_j= 125°C

100

T_j= 25°C

1.0

0.1

120

100

NUMBER OF CYCLES AT 60Hz

Fig. 3 Surge Current Derating Curve

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 4 Typical Reverse Characteristics

t_rr

+0.5A

50Ω NI (Non-inductive)

10Ω NI

Device

Under

Test

(-)

(+)

(-)

Pulse

Generator

(Note 2)

50V DC

Approx

-0.25A

1.0Ω

(+)

Oscilloscope

(Note 1)

Notes:

1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.

2. Rise Time = 10ns max. Input Impedance = 50Ω.

-1.0A

Set time base for 50/100 ns/cm

Fig. 5 Reverse Recovery Time Characteristic and Test Circuit

DS14002 Rev. F-2

2 of 2

ES2A/A - ES2D/A

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