ES2G [DIODES]

2.0A SURFACE MOUNT SUPER-FAST RECTIFIER; 2.0A表面装载超快速整流器


型号：	ES2G
厂家：	DIODES INCORPORATED
描述：	2.0A SURFACE MOUNT SUPER-FAST RECTIFIER 2.0A表面装载超快速整流器二极管光电二极管功效 IOT
文件：	总2页 (文件大小：60K)
中文：	中文翻译
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ES2G

2.0A SURFACE MOUNT SUPER-FAST RECTIFIER

Features

Glass Passivated Die Construction

Super-Fast Recovery Time For High Efficiency

SMB

Low Forward Voltage Drop and High Current

Capability

Dim

Min

3.30

4.06

1.96

0.15

5.00

0.10

0.76

2.00

Max

3.94

4.57

2.21

0.31

5.59

0.20

1.52

2.62

Surge Overload Rating to 50A Peak

Ideally Suited for Automated Assembly

Plastic Material: UL Flammability

Classification Rating 94V-0

Mechanical Data

Case: Molded Plastic

Terminals: Solder Plated Terminal -

Solderable per MIL-STD-202, Method 208

All Dimensions in mm

Polarity: Cathode Band or Cathode Notch

Weight: 0.093 grams (approx.)

Marking: Type Number

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

ES2G

Unit

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

400

V_R(RMS)

I_O

RMS Reverse Voltage

280

2.0

Average Rectified Output Current

@ T_T= 110°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave Superimposed on Rated Load

(JEDEC Method)

I_FSM

Forward Voltage

@ I_F= 2.0A

V_FM

I_RM

1.25

5.0

350

Peak Reverse Current

at Rated DC Blocking Voltage

@ T_A= 25°C

@ T_A= 125°C

t_rr

C_j

Reverse Recovery Time (Note 3)

Typical Junction Capacitance (Note 2)

R_qJT

T_j,T_STG

Typical Thermal Resistance, Junction to Terminal (Note 1)

Operating and Storage Temperature Range

°C/W

°C

-55 to +150

Notes:

1. Unit mounted on PC board with 5.0 mm (0.013 mm thick) copper pads as heat sink.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

3. Measured with I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A. See Figure 5.

DS30212 Rev. A-2

1 of 2

ES2G

0.75

2.0

T_j= 25°C

Pulse width = 300µs

1.6

1.0

1.2

0.8

0.4

0.1

0.01

100

125

150

175

0.4

0.8

1.2

1.6

T_T, TERMINAL TEMPERATURE (°C)

Fig. 1 Forward Current Derating Curve

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

1000

Single Half-Sine-Wave

(JEDEC Method)

T_j= 125°C

100

T_j= 25°C

1.0

0.1

120

100

NUMBER OF CYCLES AT 60Hz

Fig. 3 Surge Current Derating Curve

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 4 Typical Reverse Characteristics

t_rr

+0.5A

50Ω NI (Non-inductive)

10Ω NI

Device

Under

Test

(-)

(+)

(-)

Pulse

Generator

(Note 2)

50V DC

Approx

-0.25A

1.0Ω

(+)

Oscilloscope

(Note 1)

Notes:

1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.

2. Rise Time = 10ns max. Input Impedance = 50Ω.

-1.0A

Set time base for 50/100 ns/cm

Fig. 5 Reverse Recovery Time Characteristic and Test Circuit

DS30212 Rev. A-2

2 of 2

ES2G

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