FCX705 [DIODES]
120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR; 120V PNP硅高压达林顿晶体管
| 型号： | FCX705 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR |
| 文件： | 总5页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FCX705
120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR
SUMMARY
=120V; V
V
= 1.3V; I = -1A
C
CEO
CE(sat)
DESCRIPTION
This new PNP Darlington transistor provides users with very efficient performance
combining low VCE (sat) and very high HFE to give extremely low on state losses at
120V operation. This makes it deal for use in a variety of efficient driving functions
including motors, lamps relays and solenoids and will also benefit circuits
requiring high output current switching.
SOT89
FEATURES
•
•
•
•
•
Low Saturation Voltage
min 3K @ -1A
H
FE
I = -2A Continuous
C
SOT89 package with Ptot - 1W
Specification is also available in Eline and SOT223
package outlines
APPLICATIONS
•
Various driving functions
- Lamps
- Motors
- Relays and solenoids
•
High output current switches
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
FCX705TA
7’‘
12mm
1000 units
DEVICE MARKING
705
Top View
ISSUE 4 - DECEMBER 2002
1
S E M IC O N D U C T O R S
FCX705
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
LIMIT PNP
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
I
-140
-120
-10
-4
V
V
V
A
A
CBO
CEO
EBO
CM
Peak Pulse Current
Continuous Collector Current
I
-1
C
Power Dissipation at TA=25°C (a)
Linear Derating Factor
P
1
8
W
mW/°C
D
Power Dissipation at TA=25°C (b)
Linear Derating Factor
P
2.8
22
W
mW/°C
D
Operating and Storage Temperature Range
T :T
-55 to +150
°C
j
stg
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
UNIT
°C/W
°C/W
Junction to Ambient (a)
R
R
125
45
θJA
θJA
Junction to Ambient (b)
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
ISSUE 4 - DECEMBER 2002
2
S E M IC O N D U C T O R S
FCX705
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
S YMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS .
Collector-Base Breakdown
Voltage
V
V
V
-140
V
V
V
I = -100A
C
(BR)CBO
(BR)CEO
Collector-Emitter Breakdown
Voltage
-120
-10
I = -10mA*
C
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
I = -100A
E
(BR)EBO
CBO
I
-100 nA
-10 µA
V
V
= -10V
CB
CB
= -120V
Tamb = 100°C
Emitter Cut-Off Current
I
I
-0.1 µA
-10 µA
V
V
= -8V
EB
EBO
CES
Collector Emitter Cut-Off Current
= -120V
CES
Collector-Emitter Saturation
Voltage
V
-1.3
-2.5
V
V
I = -1A, I = -1mA*
C B
CE(sat)
I = -2A, I = -2mA*
C
B
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
V
V
h
-1.8
-1.7
V
V
I = -1A, I = -1mA*
C B
BE(sat)
BE(on)
FE
I = -1A, V = -5V*
C
CE
Static Forward Current Transfer
Ratio
3K
3K
3K
2K
I = -10mA, V = -5V*
C CE
I = -100mA, V = -5V*
C
CE
30K
I = -1A, V = -5V*
C CE
I = -2A, V = -5V*
C
CE
Transition Frequency
f
160
MHz
I = -100mA, V = -10V
T
C
CE
f= 20MHz
Input Capacitance
Output Capacitance
Turn-On Time
C
C
90
15
pF
pF
µs
V
V
= -500mV, f= 1MHz
= -10V, f= 1MHz
ibo
obo
(on)
CB
CB
t
0.6
I = -500mA, V = -10V
C CE
I
=I = -0.5mA
B1 B2
Turn-Off Time
t
0.8
µs
I = -500mA, V = -10V
C CE
B1 B2
(off)
I
=I = -0.5mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Nb. Spice param eter data is available upon request for this device.
ISSUE 4 - DECEMBER 2002
3
S E M IC O N D U C T O R S
FCX705
PNP CHARACTERISTICS
ISSUE 4 - DECEMBER 2002
4
S E M IC O N D U C T O R S
FCX705
PACKAGE DIMENSIONS
PAD LAYOUT DETAILS
A
H
C
K
D B
G
F
N
Millim e t re s
In ch e s
DIM
Min
Ma x
4.60
4.25
1.60
2.60
0.45
0.55
1.80
2.85
3.10
1.60
Min
Ma x
A
B
C
D
F
4.40
3.75
1.40
-
0.173
.150
0.181
0.167
0.630
0.102
0.018
0.022
0.072
0.112
0.112
0.063
0.550
-
0.28
0.38
1.50
2.60
2.90
1.4
0.011
0.015
0.060
0.102
0.114
0.055
G
H
K
L
N
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ISSUE 4 - DECEMBER 2002
5
S E M IC O N D U C T O R S
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