FMMT560 [DIODES]
PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR; PNP硅平面高压晶体管
| 型号： | FMMT560 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
| 文件： | 总4页 (文件大小：476K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
FMMT560
PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
Features
Mechanical Data
•
•
Case: SOT-23
•
•
•
•
Excellent hFE Characteristics up to IC = 50mA
Low Saturation Voltages
Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Matte Tin Finish annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
•
•
•
•
•
•
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
C
E
C
B
E
B
Top View
Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Value
Unit
V
-500
-500
-5
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Continuous Collector Current
Peak Pulse Current
-150
-500
mA
mA
ICM
Thermal Characteristics
Characteristic
Power Dissipation
Symbol
PD
Value
500
Unit
mW
°C
Operating and Storage Temperature Range
-55 to +150
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 3)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
-500
-500
-5
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO; ICES
IEBO
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
IC = -100μA
IC = -10mA
V
IE = 100μA
VCB = -500V, VCE = -500V
VEB = -5V
-100
nA
nA
⎯
⎯
Emitter Cutoff Current
-100
ON CHARACTERISTICS (Note 3)
I
C = -1mA, VCE = -10V
IC = -50mA, VCE = -10V
C = -100mA, VCE = -10V
100
80
⎯
300
300
⎯
⎯
⎯
15
DC Current Gain
hFE
⎯
I
IC = -20mA, IB = -2mA
IC = -50mA, IB = -10mA
IC = -50mA, VCE = -10V
IC = -50mA, IB = -10mA
-0.2
-0.5
Collector-Emitter Saturation Voltage
V
VCE(SAT)
⎯
⎯
Base-Emitter Turn-On Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
-0.9
-0.9
V
V
VBE(ON)
⎯
⎯
⎯
⎯
VBE(SAT)
8
pF
Cobo
fT
⎯
⎯
⎯
VCB = -20V, f = 1MHz
VCE = -20V, IC = -10mA,
f = 50MHz
Current Gain-Bandwidth Product
60
MHz
⎯
SWITCHING CHARACTERISTICS
Turn-On Time
110
1.5
ns
ton
toff
⎯
⎯
⎯
⎯
V
CE = -100V, IC = -50mA,
Turn-Off Time
IB1 = -5mA, IB2 = 10mA
μs
Notes:
1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤2%
1 of 4
www.diodes.com
May 2009
© Diodes Incorporated
FMMT560
Document Revision: 3
A Product Line of
Diodes Incorporated
FMMT560
2 of 4
www.diodes.com
May 2009
© Diodes Incorporated
FMMT560
Document Revision: 3
A Product Line of
Diodes Incorporated
FMMT560
Ordering Information (Note 4)
Part Number
FMMT560TA
Case
SOT-23
Packaging
3000/Tape & Reel
Notes:
4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
560 = Product Type Marking Code
560
Package Outline Dimensions
SOT-23
A
Dim
A
B
C
D
F
G
H
J
K
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013 0.10
0.903 1.10
-
0.45
0.085 0.18
0° 8°
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
C
B
2.05
3.00
1.83
2.90
0.05
1.00
0.400
0.55
0.11
-
H
M
K
K1
K1
L
M
-
D
0.61
F
J
L
G
α
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value (in mm)
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
Z
C
E
X
3 of 4
www.diodes.com
May 2009
© Diodes Incorporated
FMMT560
Document Revision: 3
A Product Line of
Diodes Incorporated
FMMT560
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
4 of 4
www.diodes.com
May 2009
© Diodes Incorporated
FMMT560
Document Revision: 3
相关型号：
FMMT560AL99Z
Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SUPERSOT-3
FAIRCHILD
FMMT560D87Z
Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SUPERSOT-3
FAIRCHILD
FMMT560L99Z
Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SUPERSOT-3
FAIRCHILD
FMMT560TC
Small Signal Bipolar Transistor, 0.15A I(C), 500V V(BR)CEO, 1-Element, PNP, Silicon,
DIODES
©2020 ICPDF网 联系我们和版权申明