FMMT624TC [DIODES]

Small Signal Bipolar Transistor, 1A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon,;
FMMT624TC
型号: FMMT624TC
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

Small Signal Bipolar Transistor, 1A I(C), 125V V(BR)CEO, 1-Element, NPN, Silicon,

开关 光电二极管 晶体管
文件: 总7页 (文件大小:203K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
A Product Line of  
Diodes Incorporated  
FMMT624  
125V NPN LOW SATURATION TRANSISTOR IN SOT23  
Features  
Mechanical Data  
Case: SOT23  
BVCEO > 125V  
C = 1A high Continuous Collector Current  
ICM = 3A Peak Pulse Current  
CE(sat) = 160mfor a low equivalent On-Resistance  
I
Case Material: molded plastic, “Green” molding compound  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish – Matte Tin Plated Leads, Solderable per  
MIL-STD-202, Method 208  
R
625mW Power dissipation  
hFE specified up to 3A for high current gain hold up  
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
Weight 0.008 grams (approximate)  
Applications  
DC-DC / DC-AC Modules  
Regulator  
LED driver  
CCFL Backlighting Inverters  
SOT23  
C
E
E
C
B
B
Top View  
Device Symbol  
Top View  
Pin-Out  
Ordering Information (Note 4)  
Product  
FMMT624TA  
FMMT624TC  
Marking  
624  
624  
Reel size (inches)  
Tape width (mm)  
Quantity per reel  
3,000  
7
13  
8
8
10,000  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.  
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)  
and <1000ppm antimony compounds.  
4. For packaging details, go to our website at http://www.diodes.com.  
Marking Information  
624 = Product Type Marking Code  
624  
1 of 7  
www.diodes.com  
December 2012  
© Diodes Incorporated  
FMMT624  
Document number: DS33110 Rev. 5 - 2  
A Product Line of  
Diodes Incorporated  
FMMT624  
Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
125  
125  
7
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Continuous Collector Current  
Peak Pulse Current (Note 5)  
Base Current  
1
A
3
A
ICM  
500  
mA  
IB  
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
Value  
625  
Unit  
mW  
Power Dissipation (Note 5)  
Power Dissipation (Note 6)  
PD  
806  
mW  
PD  
Thermal Resistance, Junction to Ambient (Note 5)  
Thermal Resistance, Junction to Ambient (Note 6)  
Thermal Resistance, Junction to Leads (Note 7)  
Operating and Storage Temperature Range  
200  
RθJA  
RθJA  
RθJL  
J, TSTG  
°C/W  
°C/W  
°C/W  
°C  
155  
194  
-55 to +150  
T
ESD Ratings (Note 8)  
Characteristic  
Electrostatic Discharge - Human Body Model  
Electrostatic Discharge - Machine Model  
Symbol  
ESD HBM  
ESD MM  
Value  
4,000  
400  
Unit  
V
V
JEDEC Class  
3A  
C
Notes:  
5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured  
when operating in a steady-state condition.  
6. Same as note 5, except the device is measured at t 5 sec.  
7. Thermal resistance from junction to solder-point (at the end of the collector lead).  
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.  
2 of 7  
www.diodes.com  
December 2012  
© Diodes Incorporated  
FMMT624  
Document number: DS33110 Rev. 5 - 2  
A Product Line of  
Diodes Incorporated  
FMMT624  
Thermal Characteristics and Derating information  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
0
25  
50  
75  
100 125 150 175  
Temperature (°C)  
Derating Curve  
220  
200  
180  
160  
140  
120  
100  
80  
100  
10  
1
Tamb=25°C  
D=0.5  
Single Pulse  
Tamb=25°C  
D=0.1  
60  
D=0.2  
40  
D=0.05  
20  
0
Single Pulse  
0.1  
100µ 1m 10m 100m  
1
10  
100  
1k  
100µ 1m 10m 100m  
1
10  
100  
1k  
Pulse Width (s)  
Pulse Width (s)  
Transient Thermal Impedance  
Pulse Power Dissipation  
3 of 7  
www.diodes.com  
December 2012  
© Diodes Incorporated  
FMMT624  
Document number: DS33110 Rev. 5 - 2  
A Product Line of  
Diodes Incorporated  
FMMT624  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage (Note 9)  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Min  
125  
Typ  
250  
160  
8.3  
Max  
-
Unit  
V
Test Condition  
IC = 100µA  
IC = 1mA  
125  
-
V
7
-
-
V
IE = 100µA  
VCB = 100V  
VEB = 6.0V  
VCES = 100V  
<10  
<10  
<10  
100  
100  
100  
nA  
nA  
nA  
Emitter Cut-off Current  
-
IEBO  
Collector Emitter Cut-off Current  
-
ICES  
I
I
C = 10mA, VCE = 10V  
C = 200mA, VCE = 10V  
200  
300  
100  
-
400  
450  
140  
18  
-
-
-
-
Static Forward Current Transfer Ratio (Note 9)  
Collector-Emitter Saturation Voltage (Note 9)  
-
hFE  
IC = 1A, VCE = 10V  
I
I
C = 3A, VCE = 10V  
C = 0.1A, IB = 10mA  
-
-
-
-
26  
70  
160  
165  
50  
IC = 0.5A, IB = 50mA  
C = 0.5A, IB = 10mA  
150  
220  
250  
mV  
VCE(sat)  
I
IC = 1A, IB = 50mA  
IC = 1A, IB = 50mA  
IC = 1A, VCE = 10V  
Base-Emitter Saturation Voltage (Note 9)  
Base-Emitter Saturation Voltage (Note 9)  
-
-
0.85  
0.70  
1.0  
1.0  
V
V
VBE(sat)  
VBE(on)  
IC = 50mA, VCE = 10V,  
f = 100MHz  
Transition Frequency  
100  
155  
-
MHz  
fT  
Collector Output Capacitance  
Turn-On Time  
-
-
-
7
15  
-
pF  
ns  
ns  
Cobo  
t(on)  
t(off)  
VCB = 10V, f = 1MHz  
60  
V
CC = 50V, IC = 0.5A,  
Turn-Off Time  
1300  
-
IB1 = -IB2 = 50mA  
Notes:  
9. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%  
4 of 7  
www.diodes.com  
December 2012  
© Diodes Incorporated  
FMMT624  
Document number: DS33110 Rev. 5 - 2  
A Product Line of  
Diodes Incorporated  
FMMT624  
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
5 of 7  
www.diodes.com  
December 2012  
© Diodes Incorporated  
FMMT624  
Document number: DS33110 Rev. 5 - 2  
A Product Line of  
Diodes Incorporated  
FMMT624  
Package Outline Dimensions  
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.  
A
SOT23  
Dim  
A
B
C
D
F
G
H
J
K
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013 0.10  
0.903 1.10  
-
0.45  
0.085 0.18  
0° 8°  
Max  
0.51  
1.40  
2.50  
1.03 0.915  
0.60 0.535  
Typ  
0.40  
1.30  
2.40  
C
B
2.05  
3.00  
1.83  
2.90  
0.05  
1.00  
0.400  
0.55  
0.11  
-
H
G
M
K
J
K1  
K1  
L
M
-
D
F
0.61  
L
α
All Dimensions in mm  
Suggested Pad Layout  
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.  
Y
Dimensions Value (in mm)  
Z
X
Y
C
E
2.9  
0.8  
0.9  
2.0  
Z
C
1.35  
E
X
6 of 7  
www.diodes.com  
December 2012  
© Diodes Incorporated  
FMMT624  
Document number: DS33110 Rev. 5 - 2  
A Product Line of  
Diodes Incorporated  
FMMT624  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2012, Diodes Incorporated  
www.diodes.com  
7 of 7  
www.diodes.com  
December 2012  
© Diodes Incorporated  
FMMT624  
Document number: DS33110 Rev. 5 - 2  

相关型号:

FMMT625

NPN SILICON POWER (SWITCHING) TRANSISTORS
ZETEX

FMMT625

SOT23 NPN SILICON POWER
DIODES

FMMT625

Collector current:IC=1A, Power dissipation :PC=625mW
TYSEMI

FMMT625QTA

Small Signal Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon,
DIODES

FMMT625TA

150V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23
DIODES

FMMT625TA

Small Signal Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon
ZETEX

FMMT625TC

Small Signal Bipolar Transistor, 1A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon,
ZETEX

FMMT634

NPN SILICON POWER DARLINGTON TRANSISTOR
ZETEX

FMMT634

Power Darlington Transistor
KEXIN

FMMT634

“SuperSOT” SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR
DIODES

FMMT634

625mW power dissipation, Highest current capability SOT23 darlington
TYSEMI

FMMT634QTA

Small Signal Bipolar Transistor, 0.9A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon,
DIODES