FMMTA56TC [DIODES]
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN;
| 型号： | FMMTA56TC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN 晶体 小信号双极晶体管 光电二极管 局域网 |
| 文件： | 总1页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 PNP SILICON PLANAR
FMMTA56
MEDIUM POWER TRANSISTORS
ISSUE 4 – MARCH 2001
✪
FEATURES
E
*
Gain of 50 at IC=100mA
C
PARTMARKING DETAIL -
FMMTA56 - 2G
B
FMMTA56R - MB
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
FMMTA56
UNIT
V
Collector-Base Voltage
-80
-80
Collector-Emitter Voltage
Emitter-Base Voltage
V
-4
V
Continuous Collector Current
Power Dissipation at Tamb=25°C
-500
mA
mW
°C
Ptot
330
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
FMMTA56
PARAMETER
SYMBOL MIN. MAX. UNIT
CONDITIONS.
IC=-1mA, IB=0*
Collector-Emitter Breakdown
Voltage
V(BR)CEO
V(BR)EBO
ICES
-80
-4
V
Emitter-Base Breakdown
Voltage
V
IE=-100µA, IC=0
VCE=-60V
Collector-Emitter Cut-Off
Current
-0.1
-0.1
µA
µA
Collector-Base Cut-Off Current ICBO
VCB=-80V, IE=0
V
CB=-60V, IE=0
Static Forward Current Transfer hFE
Ratio
50
50
IC=-10mA, VCE=1V*
IC=-100mA, VCE=1V*
Collector-Emitter Saturation
Voltage
VCE(sat)
VBE(on)
fT
-0.25
-1.2
V
IC=-100mA, IB=-10mA*
Base-Emitter
Turn-On Voltage
V
IC=-100mA, VCE=-1V*
Transition
Frequency
100
MHz
IC=-10mA, VCE=-2V
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
TBA
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