FMMV105G [DIODES]
SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE; SOT23封装硅平面变容二极管
| 型号： | FMMV105G |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE |
| 文件： | 总1页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT23 SILICON PLANAR
VARIABLE CAPACITANCE DIODE
ISSUE 4 – JANUARY 1998
FMMV105G
PIN CONFIGURATION
2
1
1
PARTMARKING DETAILS
FMMV105G – 4EZ
3
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Ptot
VALUE
330
UNIT
mW
°C
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
Reverse Breakdown
Voltage
VBR
30
V
IR = 10µA
Reverse current
IR
10
nA
nH
VR = 28V
Series Inductance
LS
TCC
3.0
f=250MHz
Diode Capacitance
Temperature
Coefficient
280
ppm/ °C VR = 3V, f=1MHz
TUNING CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
2.8 pF
6.0
CONDITIONS.
Diode Capacitance
Capacitance Ratio
Figure of MERIT
Cd
1.8
4.0
VR = 25V, f=1MHz
VR = 3V/25V, f=1MHz
C
d / Cd
Q
250
350
VR = 3V, f=50MHz
Spice parameter data is available upon request for this device
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