FZT603TA [DIODES]
Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN;
| 型号： | FZT603TA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN PC 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：624K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
Green
FZT603
80V NPN DARLINGTON TRANSISTOR IN SOT223
Features
Mechanical Data
BVCEO > 80V
Case: SOT223
BVCBO > 100V
Case Material: Molded Plastic. “Green” Molding Compound;
UL Flammability Rating 94V-0
IC = 2A High Continuous Current
Useful hFE up to 6A
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Weight: 0.112 grams (Approximate)
SOT223
Top View
Device Symbol
Top View
Pin-Out
Ordering Information (Note 4)
Product
FZT603TA
Marking
FZT603
Reel size (inches)
Tape width (mm)
Quantity per reel
7
12
1,000
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
SOT223
FZT 603 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
FZT
603
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© Diodes Incorporated
FZT603
Document number: DS33146 Rev. 4 - 2
A Product Line of
Diodes Incorporated
FZT603
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
100
80
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
10
V
Continuous Collector Current
Peak Pulse Current
2
A
6
A
ICM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
3.0
Unit
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
2.0
Power Dissipation
W
PD
1.6
1.2
41.7
62.5
78.1
104
12.9
Thermal Resistance, Junction to Ambient
R
JA
°C/W
Thermal Resistance Junction to Lead
R
JL
Operating and Storage Temperature Range
-55 to +150
°C
TJ, TSTG
ESD Ratings (Note 10)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
2,000
200
Unit
V
V
JEDEC Class
2
B
Notes:
5. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under
still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.
7. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper.
8. Same as Note 5, except the device is mounted on minimum recommended pad layout.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
.
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March 2015
© Diodes Incorporated
FZT603
Document number: DS33146 Rev. 4 - 2
A Product Line of
Diodes Incorporated
FZT603
Thermal Characteristics and Derating Information
70
50
40
30
20
10
0
Tamb=25°C
Tamb=25°C
60
25mm x 25mm
50mm x 50mm
2oz FR4
2oz FR4
50
40
D=0.5
D=0.5
30
Single Pulse
Single Pulse
20
10
0
D=0.2
D=0.2
D=0.05
D=0.05
D=0.1
D=0.1
10
100µ 1m 10m 100m
1
100
1k
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
3.0
Single Pulse
Tamb=25°C
50mm x 50mm
2oz FR4
100
2.5
2.0
1.5
1.0
0.5
0.0
25mm x 25mm
2oz FR4
50mm x 50mm
2oz FR4
10
25mm x 25mm
2oz FR4
1
100µ 1m 10m 100m
1
10
100
1k
0
20 40 60 80 100 120 140 160
Pulse Width (s)
Temperature (°C)
Pulse Power Dissipation
Derating Curve
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March 2015
© Diodes Incorporated
FZT603
Document number: DS33146 Rev. 4 - 2
A Product Line of
Diodes Incorporated
FZT603
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
BVCBO
BVCEO
BVEBO
Min
100
80
Typ
240
110
16
Max
—
Unit
V
Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Base Breakdown Voltage
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 80V
—
V
10
—
V
-
-
10
10
nA
µA
—
Collector-Base Cut-Off Current
ICBO
VCB = 80V, TA = +100°C
VCES = 80V
Collector-Emitter Cut-Off Current
Emitter Cutoff Current
-
-
—
—
10
µA
nA
ICES
IEBO
100
VEB = 8V
IC = 50mA, VCE = 5V
IC = 500mA, VCE = 5V
IC = 1A, VCE = 5V
IC = 2A, VCE = 5V
IC = 5A, VCE = 5V
IC = 6A, VCE = 5V
3,000
5,000
3,000
2,000
14,000
15,000
14,000
10,000
2,000
750
—
100,000
—
—
—
—
DC Current Gain (Note 11)
—
hFE
IC = 250mA, IB = 0.25mA
IC = 0.4A, IB = 0.4mA
IC = 1A, IB = 1mA
0.79
0.80
0.88
0.99
0.86
0.88
0.90
1.00
1.13
—
—
—
Collector-Emitter Saturation Voltage (Note 11)
V
VCE(sat)
IC = 2A, IB = 20mA
IC = 2A, IB = 20mA,TJ = +150°C
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
Input Capacitance (Note 11)
—
—
—
—
1.70
1.50
90
1.95
1.75
—
V
V
VBE(sat)
VBE(on)
Cibo
IC = 2A, IB = 20mA
IC = 2A, VCE = 5V
pF
pF
VEB = 0.5V, f = 1MHz
VCB = 10V, f = 1MHz
Output Capacitance (Note 11)
15
—
Cobo
VCE = 10V, IC = 100mA,
f=20MHz
Current Gain-Bandwidth Product (Note 11)
150
—
—
MHz
fT
Turn-On Time
Turn-Off Time
—
—
0.5
1.6
—
—
µs
µs
ton
toff
VCC = 10V, IC = 500mA
IB1 = -IB2 = 0.5mA
Note:
11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
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March 2015
© Diodes Incorporated
FZT603
Document number: DS33146 Rev. 4 - 2
A Product Line of
Diodes Incorporated
FZT603
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
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© Diodes Incorporated
FZT603
Document number: DS33146 Rev. 4 - 2
A Product Line of
Diodes Incorporated
FZT603
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D
Q
b1
C
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
A1 0.010 0.15 0.05
b
b1
C
D
E
E1
e
e1
L
0.60 0.80 0.70
2.90 3.10 3.00
0.20 0.30 0.25
6.45 6.55 6.50
3.45 3.55 3.50
6.90 7.10 7.00
E
E1
Gauge
Plane
0.25
Seating
Plane
L
-
-
-
-
4.60
2.30
e1
b
0.85 1.05 0.95
0.84 0.94 0.89
Q
e
All Dimensions in mm
A
A1
7°
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Y1
Dimensions Value (in mm)
C
C1
X
X1
Y
2.30
6.40
1.20
3.30
1.60
1.60
8.00
C1 Y2
Y1
Y2
Y
C
X
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© Diodes Incorporated
FZT603
Document number: DS33146 Rev. 4 - 2
A Product Line of
Diodes Incorporated
FZT603
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
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Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
FZT603
Document number: DS33146 Rev. 4 - 2
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