KBP201G [DIODES]

2.0A GLASS PASSIVATED BRIDGE RECTIFIER; 2.0A玻璃钝化整流桥
KBP201G
型号: KBP201G
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

2.0A GLASS PASSIVATED BRIDGE RECTIFIER
2.0A玻璃钝化整流桥

文件: 总2页 (文件大小:55K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
KBP2005G - KBP210G  
2.0A GLASS PASSIVATED BRIDGE RECTIFIER  
Features  
·
·
·
·
·
·
Glass Passivated Die Construction  
High Case Dielectric Strength of 1500V  
KBP  
RMS  
Dim  
A
MinMax  
14.25  
Low Reverse Leakage Current  
14.75  
10.60  
Surge Overload Rating to 65A Peak  
Ideal for Printed Circuit Board Applications  
L
B
10.20  
A
K
J
C
2.29 Typical  
Plastic Material - UL Flammability  
Classification 94V-0  
M
N
D
14.25  
3.56  
0.76  
1.17  
14.73  
4.06  
0.86  
1.42  
B
·
UL Listed Under Recognized Component Index,  
File Number E94661  
E
_
+
G
H
C
H
G
Mechanical Data  
2.8 X 45°  
Chamfer  
J
D
·
·
Case: Molded Plastic  
K
L
0.80  
3.35  
1.10  
3.65  
P
Terminals: Plated Leads, Solderable per  
MIL-STD-202, Method 208  
M
N
P
3° Nominal  
2° Nominal  
0.30 0.64  
·
·
·
·
Polarity: Marked on Body  
Approx. Weight: 1.52 grams  
Mounting Position: Any  
Marking: Type Number  
E
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
KBP  
KBP  
KBP  
KBP  
KBP  
2005G 201G 202G 204G 206G 208G 210G  
KBP  
KBP  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VR(RMS)  
RMS Reverse Voltage  
280  
2.0  
V
A
Average Rectified Output Current  
@ TC = 105°C  
IO  
Non-Repetitive Peak Forward Surge Current, 8.3 ms single  
half-sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
65  
A
Forward Voltage per element  
@ IF = 2.0A  
VFM  
IRM  
1.1  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TC = 25°C  
@ TC = 125°C  
5.0  
500  
µA  
Cj  
Typical Junction Capacitance per Element (Note 2)  
Typical Thermal Resistance (Note 1)  
25  
14  
pF  
°C/W  
°C  
RqJC  
Tj, TSTG  
Operating and Storage Temperature Range  
-65 to +150  
Notes:  
1. Thermal resistance from junction to case per element. Unit mounted on 75 x 75 x 1.6mm aluminum plate heat sink.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.  
DS21205 Rev. F-2  
1 of 2  
KBP2005G-KBP210G  
2.0  
1.5  
10  
TJ = 150°C  
Lead  
TJ = 25°C  
1.0  
Case  
1.0  
0.5  
Ambient  
0.1  
Pulse Width  
= 300 µs  
0
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2 1.4  
0
50  
100  
150  
VF, INSTANTANEOUS FWD VOLTAGE (V)  
Fig. 2 Typical Fwd Characteristics  
T, TEMPERATURE (°C)  
Fig. 1 Forward Current Derating Curve  
100  
80  
100  
10  
1
Tj = 25°C  
f = 1MHz  
Tj = 150°c  
Single Half  
Sine Wave  
(JEDEC Method)  
60  
40  
20  
0
1
10  
100  
1
10  
100  
VR, REVERSE VOLTAGE (V)  
NUMBER OF CYCLES AT 60 Hz  
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current  
Fig. 4 Typical Junction Capacitance  
10,000  
1000  
Tj = 150°C  
Tj = 125°C  
100  
10  
Tj = 100°C  
1.0  
Tj = 25°C  
0.1  
0.01  
0
20  
40  
60  
80  
100  
120  
140  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
Fig. 5 Typical Reverse Characteristics  
DS21205 Rev. F-2  
2 of 2  
KBP2005G-KBP210G  

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