KBP201G [DIODES]
2.0A GLASS PASSIVATED BRIDGE RECTIFIER; 2.0A玻璃钝化整流桥型号: | KBP201G |
厂家: | DIODES INCORPORATED |
描述: | 2.0A GLASS PASSIVATED BRIDGE RECTIFIER |
文件: | 总2页 (文件大小:55K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
KBP2005G - KBP210G
2.0A GLASS PASSIVATED BRIDGE RECTIFIER
Features
·
·
·
·
·
·
Glass Passivated Die Construction
High Case Dielectric Strength of 1500V
KBP
RMS
Dim
A
MinMax
14.25
Low Reverse Leakage Current
14.75
10.60
Surge Overload Rating to 65A Peak
Ideal for Printed Circuit Board Applications
L
B
10.20
A
K
J
C
2.29 Typical
Plastic Material - UL Flammability
Classification 94V-0
M
N
D
14.25
3.56
0.76
1.17
14.73
4.06
0.86
1.42
B
·
UL Listed Under Recognized Component Index,
File Number E94661
E
_
+
G
H
C
H
G
Mechanical Data
2.8 X 45°
Chamfer
J
D
·
·
Case: Molded Plastic
K
L
0.80
3.35
1.10
3.65
P
Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
M
N
P
3° Nominal
2° Nominal
0.30 0.64
·
·
·
·
Polarity: Marked on Body
Approx. Weight: 1.52 grams
Mounting Position: Any
Marking: Type Number
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
KBP
KBP
KBP
KBP
KBP
2005G 201G 202G 204G 206G 208G 210G
KBP
KBP
Characteristic
Symbol
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
50
35
100
70
200
140
400
600
420
800
560
1000
700
V
VR(RMS)
RMS Reverse Voltage
280
2.0
V
A
Average Rectified Output Current
@ TC = 105°C
IO
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
(JEDEC method)
IFSM
65
A
Forward Voltage per element
@ IF = 2.0A
VFM
IRM
1.1
V
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC = 25°C
@ TC = 125°C
5.0
500
µA
Cj
Typical Junction Capacitance per Element (Note 2)
Typical Thermal Resistance (Note 1)
25
14
pF
°C/W
°C
RqJC
Tj, TSTG
Operating and Storage Temperature Range
-65 to +150
Notes:
1. Thermal resistance from junction to case per element. Unit mounted on 75 x 75 x 1.6mm aluminum plate heat sink.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
DS21205 Rev. F-2
1 of 2
KBP2005G-KBP210G
2.0
1.5
10
TJ = 150°C
Lead
TJ = 25°C
1.0
Case
1.0
0.5
Ambient
0.1
Pulse Width
= 300 µs
0
0
0
0.2
0.4
0.6
0.8
1.0
1.2 1.4
0
50
100
150
VF, INSTANTANEOUS FWD VOLTAGE (V)
Fig. 2 Typical Fwd Characteristics
T, TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
100
80
100
10
1
Tj = 25°C
f = 1MHz
Tj = 150°c
Single Half
Sine Wave
(JEDEC Method)
60
40
20
0
1
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
Fig. 4 Typical Junction Capacitance
10,000
1000
Tj = 150°C
Tj = 125°C
100
10
Tj = 100°C
1.0
Tj = 25°C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS21205 Rev. F-2
2 of 2
KBP2005G-KBP210G
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