MBR20200CT [DIODES]
High Temperature Schottky Barrier Rectifier Diodes;
| 型号： | MBR20200CT |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | High Temperature Schottky Barrier Rectifier Diodes 局域网 二极管 |
| 文件： | 总2页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR2070CT - MBR20100CT
20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
•
Guard Ring Die Construction for
TO-220AB
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Dim
A
B
C
D
E
Min
14.48
10.00
2.54
5.90
2.80
12.70
2.40
0.69
3.54
4.07
1.15
0.30
2.04
Max
15.75
10.40
3.43
6.40
3.93
14.27
2.70
0.93
3.78
4.82
1.39
0.50
2.79
•
•
•
•
•
Lead Free Finish/RoHS Compliant (Note 3)
G
H
J
Mechanical Data
•
•
Case: TO-220AB
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Polarity: As Marked on Body
Terminals: Finish – Tin. Solderable per MIL-STD-202,
Method 208
Marking: Type Number
Ordering Information: See Page 2
Weight: 2.24 grams (approximate)
K
L
•
•
•
M
N
P
•
•
•
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MBR
2070CT
MBR
2080CT
MBR
2090CT
MBR
20100CT
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
Unit
VRRM
VRWM
VR
70
49
80
56
90
63
100
V
RMS Reverse Voltage
VR(RMS)
IO
70
V
A
20
Average Rectified Output Current (Note 1)
@ TC = 120°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
IFSM
VFM
IRM
150
A
Forward Voltage Drop
@ IF = 10A, Tj = 125°C
@ IF = 10A, Tj = 25°C
@ IF = 20A, Tj = 125°C
@ IF = 20A, Tj = 25°C
@ TA = 25°C
0.75
0.85
0.85
0.95
V
Peak Reverse Current
0.10
100
mA
at Rated DC Blocking Voltage (Note 4)
@ TA = 125°C
Typical Total Capacitance (Note 2)
CT
RθJC
dV/dt
Tj
1000
2.0
pF
°C/W
V/μs
°C
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change
10000
Operating Temperature Range
-55 to +150
-55 to +175
Storage Temperature Range
TSTG
°C
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC and per element.
3. RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see EU Directive Annex Notes 5 and 7.
4. Short duration pulse test to minimize self-heating effect.
DS30019 Rev. 7 - 2
1 of 2
MBR2070CT-MBR20100CT
© Diodes Incorporated
www.diodes.com
Ordering Information (Note 5)
Packaging
Shipping
Device
MBR20xxCT*
TO-220AB
50/Tube
*
xx = Device type, e.g. MBR2080CT
Notes:
5. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf.
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30019 Rev. 7 - 2
2 of 2
MBR2070CT-MBR20100CT
© Diodes Incorporated
www.diodes.com
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