MBR740 [DIODES]
7.5A SCHOTTKY BARRIER RECTIFIER; 7.5A肖特基整流器
| 型号： | MBR740 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 7.5A SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR730 - MBR760
7.5A SCHOTTKY BARRIER RECTIFIER
Features
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
TO-220AC
·
·
·
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material: UL Flammability
Classification Rating 94V-0
L
Dim
A
B
C
D
E
Min
14.22
9.65
2.54
5.84
¾
Max
15.88
10.67
3.43
B
M
C
D
E
·
·
K
A
6.86
6.35
Pin 1
Pin 2
G
J
12.70
0.51
14.73
1.14
G
K
L
3.53Æ 4.09Æ
Mechanical Data
J
N
3.56
1.14
0.30
2.03
4.83
4.83
1.40
0.64
2.92
5.33
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
M
N
P
R
P
+
·
·
·
·
Polarity: See Diagram
Pin 1 +
Pin 2 -
Case
Weight: 2.3 grams (approx.)
Mounting Position: Any
Marking: Type Number
R
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MBR
730
MBR
735
MBR
740
MBR
745
MBR
750
MBR
760
Characteristic
Symbol
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
30
21
35
40
28
45
50
35
60
42
V
VR(RMS)
IO
RMS Reverse Voltage
24.5
31.5
V
A
Average Rectified Output Current
(Note 1)
7.5
@ TC = 125°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
150
A
Forward Voltage Drop
@ IF = 7.5A, TC = 25°C
@IF = 7.5A, TC = 125°C
0.55
0.70
0.70
0.75
VFM
IRM
V
Peak Reverse Current
at Rated DC Blocking Voltage
@TC 25°C
=
1.0
15
1.0
50
mA
@ TC = 125°C
Cj
Typical Junction Capacitance (Note 2)
400
3.5
pF
°C/W
V/ms
°C
RqJc
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change (Rated VR)
dV/dt
Tj, TSTG
10,000
Operating and Storage Temperature Range
-65 to +150
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
DS23007 Rev. 7 - 2
1 of 2
MBR730-MBR760
10
50
10
MBR730 - MBR745
8
6
MBR750 - MBR760
4
1.0
2
0
TJ = 25°C
Pulse width = 300µs
2% duty cycle
0.1
0.2
0.4
0.6
0.8
1.0
0
50
100
150
TC, CASE TEMPERATURE (°C)
Fig. 1 Fwd Current Derating Curve
VF, INSTANTANEOUS FWD VOLTAGE (V)
Fig. 2 Typ Instantaneous Fwd Characteristics
175
150
125
100
4000
1000
8.3 ms Single half
sine-wave (JEDEC method)
75
50
25
100
0.1
1.0
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
Fig. 4 Typical Junction Capacitance
10
Tj = 125°C
1.0
Tj = 75°C
0.1
Tj = 25°C
0.01
Resistive or
Inductive load
0.001
0
40
60
80
100
120 140
20
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
DS23007 Rev. 7 - 2
2 of 2
MBR730-MBR760
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MBR745
肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes，Tj = -65°C ~ 175°C, Tjm = 175°C。
SIRECTIFIER
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