MBR845 [DIODES]
8.0A SCHOTTKY BARRIER RECTIFIER; 8.0A肖特基整流器
| 型号： | MBR845 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 8.0A SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR830 - MBR860
8.0A SCHOTTKY BARRIER RECTIFIER
Features
·
·
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
TO-220AC
·
·
·
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward
Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
Plastic Material: UL Flammability
Classification Rating 94V-0
L
Dim
A
B
C
D
E
Min
14.22
9.65
2.54
5.84
¾
Max
15.88
10.67
3.43
B
M
C
D
E
·
·
K
A
6.86
6.35
1
2
G
J
12.70
0.51
14.73
1.14
G
Mechanical Data
K
L
3.53Æ 4.09Æ
J
N
3.56
1.14
0.30
2.03
4.83
4.83
1.40
0.64
2.92
5.33
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
M
N
P
R
P
·
·
·
·
Polarity: See Diagram
Pin 1
Pin 2
Case
Weight: 2.24 grams (approx.)
Mounting Position: Any
Marking: Type Number
R
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MBR
830
MBR
835
MBR
840
MBR
845
MBR
850
MBR
860
Characteristic
Symbol
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
30
21
35
40
28
45
50
35
60
42
V
VR(RMS)
IO
RMS Reverse Voltage
24.5
31.5
V
A
Average Rectified Output Current
(Note 1)
8.0
@ TC = 125°C
Non-Repetitive Peak Forward Surge Current
IFSM
IRRM
VFM
8.3ms single half sine-wave superimposed on rated load
(JEDEC Method)
150
1.0
A
A
Repetitive Peak Reverse Surge Current
@ t £ 2.0ms
Forward Voltage Drop
@ IF = 8.0A, TC = 125°C
0.57
0.70
0.84
0.70
0.80
0.95
@ IF = 8.0A, TC
@ IF = 16A, TC
=
=
25°C
25°C
V
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC
=
25°C
0.1
15
IRM
mA
@ TC = 125°C
Cj
Typical Junction Capacitance (Note 2)
250
3.0
pF
K/W
V/ms
°C
RqJC
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change (Rated VR)
dV/dt
Tj, TSTG
1000
Operating and Storage Temperature Range
-65 to +150
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS30030 Rev. B-4
1 of 2
MBR830-MBR860
10
100
MBR830 - MBR845
8
6
10
4
MBR850 / MBR860
1.0
0.1
2
0
Tj = 25°C
Pulse Width = 300µs
2% Duty Cycle
0
50
100
150
0
0.4
0.8
1.2
1.6
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
300
250
200
150
1000
100
100
50
0
Tj = 25°C
f = 1.0MHz
10
0.1
1.0
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
Fig. 4 Typical Junction Capacitance
DS30030 Rev. B-4
2 of 2
MBR830-MBR860
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