MMBD4448HTC [DIODES]
SURFACE MOUNT FAST SWITCHING DIODE; 表面装载快速开关二极管
| 型号： | MMBD4448HTC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | SURFACE MOUNT FAST SWITCHING DIODE |
| 文件： | 总2页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBD4448HT /HTA /HTC /HTS
SURFACE MOUNT FAST SWITCHING DIODE
Features
SOT-523
·
·
·
·
Ultra-Small Surface Mount Package
Fast Switching Speed
For General Purpose Switching Applications
High Conductance
Dim Min Max Typ
A
A
B
C
D
G
H
J
0.15 0.30 0.22
0.75 0.85 0.80
1.45 1.75 1.60
C
C
B
TOP VIEW
Mechanical Data
¾
¾
0.50
E
B
·
Case: SOT-523, Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
G
0.90 1.10 1.00
1.50 1.70 1.60
0.00 0.10 0.05
0.60 0.80 0.75
0.10 0.30 0.22
0.10 0.20 0.12
0.45 0.65 0.50
H
·
K
M
N
·
·
K
L
J
L
D
·
·
Polarity: See Diagrams Below
Marking: See Diagrams Below & Page 2
M
N
a
0°
8°
¾
All Dimensions in mm
MMBD4448HTS Marking: AB
MMBD4448HTC Marking: A7
MMBD4448HTA Marking: A6
@ TA = 25°C unless otherwise specified
MMBD4448HT Marking: A3
Maximum Ratings
Characteristic
Symbol
Value
Unit
VRM
Non-Repetitive Peak Reverse Voltage
100
V
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
80
VR(RMS)
IFM
RMS Reverse Voltage
57
V
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
500
250
mA
mA
IO
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
4.0
2.0
IFSM
Pd
A
@ t = 1.0s
Power Dissipation (Note 1)
150
833
mW
°C/W
°C
R
qJA
Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Tj , TSTG
-65 to +150
Electrical Characteristics@ T = 25°C unless otherwise specified
A
Characteristic
Symbol
Min
Max
Unit
Test Condition
V(BR)R
Reverse Breakdown Voltage (Note 2)
IR = 2.5mA
80
¾
V
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
0.62
¾
0.72
0.855
1.0
VF
Forward Voltage (Note 2)
Leakage Current (Note 2)
V
¾
¾
1.25
VR = 70V
100
50
30
25
nA
mA
mA
nA
VR = 75V, Tj = 150°C
VR = 25V, Tj = 150°C
VR = 20V
IR
¾
VR = 6V, f = 1.0MHz
VR = 6V, IF = 5mA
CT
trr
Total Capacitance
¾
¾
3.5
4.0
pF
ns
Reverse Recovery Time
Notes:
1. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS30263 Rev. 5 - 2
1 of 2
MMBD4448HT /HTA /HTC /HTS
1000
100
10
10,000
1000
100
1.0
10
0.1
V
R
= 20V
1
0.01
0
100
T, JUNCTION TEMPERATURE (°C)
200
0
1
2
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
j
Fig. 2 Leakage Current vs Junction Temperature
Fig. 1 Forward Characteristics
(Note 3)
Ordering Information
Device
Packaging
Shipping
MMBD4448HT-7
MMBD4448HTA-7
MMBD4448HTC-7
MMBD4448HTS-7
SOT-523
SOT-523
SOT-523
SOT-523
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
Marking Information
XX = Product Type Marking Code (See Page 1 Diagrams)
YM = Date Code Marking
XXYM
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
Date Code Key
Year
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
M
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
Notes:
3. For Packaging Details: go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
DS30263 Rev. 5 - 2
2 of 2
MMBD4448HT /HTA /HTC /HTS
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