MMBF170-7 [DIODES]
Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3;型号: | MMBF170-7 |
厂家: | DIODES INCORPORATED |
描述: | Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 晶体 晶体管 |
文件: | 总4页 (文件大小:71K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SPICE MODELS: MMBF170
MMBF170
Lead-free Green
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
·
·
·
·
·
·
Low On-Resistance
A
SOT-23
Low Gate Threshold Voltage
Low Input Capacitance
D
Dim
A
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
Fast Switching Speed
B
C
B
Low Input/Output Leakage
Lead Free/RoHS Compliant (Note 2)
TOP VIEW
G
S
C
D
G
E
D
H
Mechanical Data
·
·
E
K
Case: SOT-23
M
G
H
J
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
L
J
Drain
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
K
L
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
M
Gate
a
·
·
·
Marking: (See Page 2) K6Z
All Dimensions in mm
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approximate)
Source
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VDSS
MMBF170
Units
60
60
V
V
Drain-Source Voltage
VDGR
Drain-Gate Voltage RGS £ 1.0MW
Gate-Source Voltage
Continuous
Pulsed
±20
±40
VGSS
ID
V
500
800
Drain Current (Note 1)
Continuous
Pulsed
mA
300
1.80
mW
mW/°C
Pd
Total Power Dissipation (Note 1)
RqJA
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
417
K/W
Tj, TSTG
-55 to +150
°C
Note: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
DS30104 Rev. 8 - 2
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MMBF170
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ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
VGS = 0V, ID = 100mA
VDS = 60V, VGS = 0V
VGS = ±15V, VDS = 0V
60
¾
¾
70
¾
¾
¾
1.0
±10
V
µA
nA
IGSS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
RDS (ON)
gFS
VDS = VGS, ID = 250mA
0.8
2.1
3.0
V
W
VGS = 10V, ID = 200mA
¾
¾
¾
¾
5.0
5.3
Static Drain-Source On-Resistance
V
GS = 4.5V, ID = 50mA
VDS =10V, ID = 0.2A
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
80
¾
¾
mS
Ciss
Coss
Crss
¾
¾
¾
22
11
40
30
pF
pF
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
2.0
5.0
ton
toff
¾
¾
¾
¾
10
10
ns
ns
VDD = 25V, ID = 0.5A,
V
GS = 10V, RGEN = 50W
Turn-Off Time
Notes: 3. Short duration test pulse used to minimize self-heating effect.
(Note 4)
Ordering Information
Device
Packaging
Shipping
MMBF170-7-F
SOT-23
3000/Tape & Reel
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K6Z = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K6Z
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30104 Rev. 8 - 2
2 of 4
MMBF170
www.diodes.com
7
1.0
VGS = 10V
Tj = 25°C
10V
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.1V
6
5
4
3
2
0.8
0.6
VGS = 5.0V
5.5V
5.0V
VGS = 10V
0.4
0.2
0
1
0
2.1V
0
0.2
0.4
0.6
0.8
1.0
3
0
1
2
4
5
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
Fig. 2 On-Resistance vs Drain Current
6
5
4
3
2
2.0
1.5
VGS = 10V, ID = 0.5A
ID = 500mA
VGS = 5.0V, ID = 0.05A
ID = 50mA
1.0
0.5
0
1
0
0
2
4
6
8
10 12 14 16 18
-55 -30
-5
20
45
70 95
120 145
Tj, JUNCTION TEMPERATURE (°C)
VGS, GATE TO SOURCE VOLTAGE (V)
Fig. 3 On-Resistance vs Junction Temperature
Fig. 4 On-Resistance vs. Gate-Source Voltage
350
300
250
200
150
100
50
0
200
0
175
25
50
150
75 100 125
TA, AMBIENT TEMPERATURE (°C)
Fig. 5, Max Power Dissipation vs
Ambient Temperature
DS30104 Rev. 8 - 2
3 of 4
MMBF170
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IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agreetoholdDiodesIncorporatedandallthecompanieswhoseproductsarerepresentedonourwebsite,harmlessagainstalldamages.
LIFE SUPPORT
DiodesIncorporatedproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithouttheexpressedwrittenapprovalofthe
PresidentofDiodesIncorporated.
DS30104 Rev. 8 - 2
4 of 4
MMBF170
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