MMBF170 [DIODES]

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; N沟道增强型网络场效晶体管


型号：	MMBF170
厂家：	DIODES INCORPORATED
描述：	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR N沟道增强型网络场效晶体管晶体晶体管功率场效应晶体管
文件：	总2页 (文件大小：65K)
中文：	中文翻译
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MMBF170

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT

TRANSISTOR

Features

SOT-23

Low On-Resistance

Dim

Min

0.37

1.19

2.10

0.89

0.45

1.78

2.65

0.013

0.89

0.45

0.076

Max

0.51

1.40

2.50

1.05

0.61

2.05

3.05

0.15

1.10

0.61

0.178

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

TOP VIEW

Mechanical Data

Case: SOT-23, Molded Plastic

Terminals: Solderable per MIL-STD-202,

Method 208

Terminal Connections: See Diagram

Marking: K6Z

Weight: 0.008 grams (approx.)

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Symbol

Maximum Ratings

Characteristic

MMBF170

Units

V_DSS

V_DGR

Drain-Source Voltage

Drain-Gate Voltage R_GS£ 1.0MW

Gate-Source Voltage

Continuous

Pulsed

±20

±40

V_GSS

I_D

500

800

Drain Current (Note 1)

Continuous

Pulsed

Total Power Dissipation (Note 1)

225

1.80

mW/°C

P_d

Derating above T_A= 25°C

R_qJA

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

556

K/W

T_j, T_STG

-55 to +150

°C

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

OFF CHARACTERISTICS (Note 2)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

Symbol

Min

Typ

Max

Unit

Test Condition

BV_DSS

I_DSS

V_GS= 0V, I_D= 100mA

V_DS= 60V, V_GS= 0V

V_GS= ±15V, V_DS= 0V

1.0

±10

µA

I_GSS

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

V_GS(th)

R_{DS (ON)}

g_FS

V_DS= V_GS, I_D=-250mA

V_GS= 10V, I_D= 200mA

V_DS=10V, I_D= 0.2A

0.8

2.1

3.0

5.0

Static Drain-Source On-Resistance

Forward Transconductance

DYNAMIC CHARACTERISTICS

Input Capacitance

C_iss

C_oss

C_rss

_DS= 10V, V_GS= 0V

Output Capacitance

f = 1.0MHz

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

2.0

5.0

t_D(ON)

V_DD= 25V, I_D= 0.5A,

_GS= 10V, R_GEN= 50W

t_D(OFF)

Turn-Off Delay Time

Note:1. Valid provided that terminals are kept at specified ambient temperature.

2. Pulse width £ 300ms, duty cycle £ 2%.

DS30104 Rev. C-2

1 of 2

MMBF170

1.0

V_GS= 10V

9.0V

8.0V

T_j= 25°C

7.0V

6.5V

6.0V

5.0V

4.5V

4.0V

3.5V

3.0V

0.8

0.6

V_GS= 5.0V

5.5V

5.0V

2.5V

2.0/1.0V

V_GS= 10V

0.4

0.2

0.4

0.6

0.8

1.0

I_D, DRAIN CURRENT (A)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 1 On-Region Characteristics

Fig. 2 On-Resistance vs Drain Current

2.0

1.5

1.0

V_GS= 10V, I_D= 0.5A

I_D= 500mA

I_D= 50mA

V_GS= 5.0V, I_D= 0.05A

0.5

-55 -30

-5

70 95

120 145

10 12 14 16 18

T_j, JUNCTION TEMPERATURE (°C)

Fig. 3 On-Resistance vs Junction Temperature

V_GS, GATE TO SOURCE VOLTAGE (V)

Fig. 4 On-Resistance vs. Gate-Source Voltage

DS30104 Rev. C-2

2 of 2

MMBF170

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